| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI8447DB-T2-E1
MOSFET P-CH 20V 11A 6MICRO FOOT
Vishay Siliconix
|
125 | 0.20000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 1.7V, 4.5V | 75mOhm @ 1A, 4.5V | 1.2V @ 250µA | 25 nC @ 10 V | ±12V | 600 pF @ 10 V | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot™ (1.5x1) | 6-UFBGA | Details |
|
SQ4850EY-T1_GE3
MOSFET N-CH 60V 12A 8SO
Vishay Siliconix
|
5,057 | 1.44000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 22mOhm @ 6A, 5V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
IPI60R380C6XKSA1
MOSFET N-CH 600V 10.6A TO262-3
Infineon Technologies
|
7,607 | 1.67870 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
SQD50P08-25L_GE3
MOSFET P-CH 80V 50A TO252AA
Vishay Siliconix
|
7,934 | 2.89000 | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 4.5V, 10V | 25mOhm @ 10.5A, 10V | 2.5V @ 250µA | 137 nC @ 10 V | ±20V | 5350 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
APT17F100S
MOSFET N-CH 1000V 17A D3PAK
Microchip Technology
|
5,464 | 11.45100 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 17A (Tc) | 10V | 780mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Details |
|
XPW4R10ANB,L1XHQ
MOSFET N-CH 100V 70A AEC-Q101
Toshiba Semiconductor and Storage
|
8,165 | 2.43000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | Standard | 170W (Tc) | -55°C ~ 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN | Details |
|
FCB260N65S3
MOSFET N-CH 650V 12A D2PAK
onsemi
|
206 | 2.83000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 260mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24 nC @ 10 V | ±30V | 1010 pF @ 400 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IRFR9024NTRLPBF
MOSFET P-CH 55V 11A DPAK
Infineon Technologies
|
4,842 | 1.05000 | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
TSM260P02CX6 RFG
MOSFET P-CHANNEL 20V 6.5A SOT26
Taiwan Semiconductor Corporation
|
3,495 | 1.38000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Tc) | 1.8V, 4.5V | 26mOhm @ 5A, 4.5V | 1V @ 250µA | 19.5 nC @ 4.5 V | ±10V | 1670 pF @ 15 V | - | 1.56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 | Details |
|
BUK7E1R6-30E,127
MOSFET N-CH 30V 120A I2PAK
NXP USA Inc.
|
295 | 1.22000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 154 nC @ 10 V | ±20V | 11960 pF @ 25 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
IXTH12N70X2
MOSFET N-CH 700V 12A TO247
IXYS
|
6,498 | 6.85000 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 | Details |
|
AOK27S60L
MOSFET N-CH 600V 27A TO247
Alpha & Omega Semiconductor Inc.
|
4,080 | 6.02000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 1294 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | Details |
|
FDS86106
MOSFET N-CH 100V 3.4A 8SOIC
onsemi
|
5,078 | 1.33000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.4A (Ta) | 6V, 10V | 105mOhm @ 3.4A, 10V | 4V @ 250µA | 4 nC @ 10 V | ±20V | 208 pF @ 50 V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
BUK6E2R0-30C127
N-CHANNEL POWER MOSFET
NXP USA Inc.
|
4,728 | 0.84000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 2.8V @ 1mA | 229 nC @ 10 V | ±16V | 14964 pF @ 25 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
2N7002LT3G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
|
44,763 | 0.27000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
IPT60R040S7XTMA1
MOSFET N-CH 600V 13A 8HSOF
Infineon Technologies
|
4,218 | 12.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | 3127 pF @ 300 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN | Details |
|
MCQ4406A-TP
MOSFET N-CH 30V 12A 8SOP
Micro Commercial Co
|
3,858 | 0.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 12mOhm @ 8A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 950 pF @ 15 V | - | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) | Details |
|
FDMC2D8N025S
MOSFET N-CH 25V 124A POWER33
onsemi
|
1,146 | 1.36000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 124A (Tc) | 4.5V, 10V | 1.9mOhm @ 28A, 10V | 3V @ 1mA | 63 nC @ 10 V | ±16V | 4615 pF @ 13 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN | Details |
|
PJQ4463AP-AU_R2_000A1
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
3,459 | 0.83000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 4.2A (Ta) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 879 pF @ 30 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN | Details |
|
TSM3457CX6 RFG
MOSFET P-CHANNEL 30V 5A SOT26
Taiwan Semiconductor Corporation
|
9,283 | 0.42900 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 5A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±20V | 551.57 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 | Details |
|
STB46NF30
MOSFET N-CH 300V 42A D2PAK
STMicroelectronics
|
5,621 | 5.26000 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 42A (Tc) | 10V | 75mOhm @ 17A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
TPS1100PWR
MOSFET P-CH 15V 1.27A 8TSSOP
Texas Instruments
|
10,000 | 0.72000 | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 1.27A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45 nC @ 10 V | +2V, -15V | - | - | 504mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) | Details |
|
AON7430
MOSFET N-CH 30V 13A/34A 8DFN
Alpha & Omega Semiconductor Inc.
|
9,793 | 0.13300 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 34A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 910 pF @ 15 V | - | 3.1W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN | Details |
|
AOTF190A60CL
MOSFET N-CH 600V 20A TO220F
Alpha & Omega Semiconductor Inc.
|
682 | 2.60000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tj) | 10V | 190mOhm @ 7.6A, 10V | 4.6V @ 250µA | 34 nC @ 10 V | ±20V | 1935 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack | Details |
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