| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTHL040N65S3HF
MOSFET N-CH 650V 65A TO247-3
onsemi
|
3,366 | 7.59210 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 159 nC @ 10 V | ±30V | 5945 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
|
1,038,979 | 0.33000 | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | - | ±20V | 50 pF @ 10 V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 | Details |
|
UPA2709GR-E1-A
N-CHANNEL POWER MOSFET
Renesas Electronics America Inc
|
9,700 | 0.90000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NTB6413ANT4G
MOSFET N-CH 100V 42A D2PAK
onsemi
|
9,553 | 2.19000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 28mOhm @ 42A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
DMP2070U-13
MOSFET BVDSS: 8V~24V SOT23 T&R 1
Diodes Incorporated
|
8,823 | 0.56000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Tc) | 1.8V, 4.5V | 44mOhm @ 2A, 4.5V | 950mV @ 250µA | 8.2 nC @ 10 V | ±8V | 118 pF @ 10 V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
NDD01N60T4G
MOSFET N-CH 600V 1.5A DPAK
onsemi
|
3,734 | 0.20000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.5A (Tc) | 10V | 8.5Ohm @ 200mA, 10V | 3.7V @ 50µA | 7.2 nC @ 10 V | ±30V | 160 pF @ 25 V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
BUZ21
MOSFET N-CH 100V 21A TO220AB
Harris Corporation
|
44,223 | 1.36000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Tc) | - | 85mOhm @ 13A, 10V | 4V @ 1mA | - | - | 1300 pF @ 25 V | - | - | - | Through Hole | TO-220AB | TO-220-3 | Details |
|
FDD6680A
MOSFET N-CH 30V 14A/56A DPAK
Fairchild Semiconductor
|
209,395 | 1.41000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 14A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | 1425 pF @ 15 V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
BUK754R0-55B,127
PFET, 75A I(D), 55V, 0.004OHM, 1
NXP USA Inc.
|
960 | 0.71000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 86 nC @ 10 V | ±20V | 6776 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
FDN5630
MOSFET N-CH 60V 1.7A SUPERSOT3
onsemi
|
4,027 | 0.49000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.7A (Ta) | 6V, 10V | 100mOhm @ 1.7A, 10V | 3V @ 250µA | 10 nC @ 10 V | ±20V | 400 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
PJS6461_S1_00001
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
9,485 | 0.48000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.2A (Ta) | 4.5V, 10V | 110mOhm @ 3.2A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 785 pF @ 30 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
RM2312
MOSFET N-CHANNEL 20V 4.5A SOT23
Rectron USA
|
5,502 | 0.04400 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Ta) | 1.8V, 4.5V | 33mOhm @ 4.5A, 4.5V | 1.2V @ 250µA | - | ±12V | 500 pF @ 8 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
DMTH6016LK3Q-13
MOSFET N-CH 60V 10.8 TO252 T&R
Diodes Incorporated
|
9,712 | 0.32410 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10.8A (Ta), 46.9A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 864 pF @ 30 V | - | 3.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IRF644STRRPBF
MOSFET N-CH 250V 14A D2PAK
Vishay Siliconix
|
7,290 | 3.93000 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SQJQ404E-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
Vishay Siliconix
|
8,516 | 2.94000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.72mOhm @ 20A, 10V | 3.5V @ 250µA | 270 nC @ 10 V | ±20V | 16480 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 | Details |
|
IRFI614GPBF
MOSFET N-CH 250V 2.1A TO220-3
Vishay Siliconix
|
5,429 | 1.62000 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.1A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | Details |
|
IXFT140N20X3HV
MOSFET N-CH 200V 140A TO268HV
IXYS
|
1,931 | 14.46000 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 140A (Tc) | 10V | 9.6mOhm @ 70A, 10V | 4.5V @ 4mA | 127 nC @ 10 V | ±20V | 7660 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Details |
|
AOT13N50
MOSFET N-CH 500V 13A TO220
Alpha & Omega Semiconductor Inc.
|
4,790 | 0.91870 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 510mOhm @ 6.5A, 10V | 4.5V @ 250µA | 37 nC @ 10 V | ±30V | 1633 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
EPC2215
GAN TRANS 200V 8MOHM BUMPED DIE
EPC
|
31,080 | 6.44000 | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 32A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 6mA | 17.7 nC @ 5 V | +6V, -4V | 1790 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
TW083N65C,S1F
G3 650V SIC-MOSFET TO-247 83MOH
Toshiba Semiconductor and Storage
|
180 | 13.40000 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | Through Hole | TO-247 | TO-247-3 | Details |
|
SQJQ112ER-T1_GE3
AUTOMOTIVE N-CHANNEL 100 V (D-S)
Vishay Siliconix
|
2,868 | 4.05000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 296A (Tc) | 10V | 2.53mOhm @ 20A, 10V | 3.5V @ 250µA | 272 nC @ 10 V | ±20V | 15945 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerSMD, Gull Wing | Details |
|
AUIRFS8407-7TRL
MOSFET N-CH 40V 240A D2PAK
Infineon Technologies
|
9,639 | 2.91480 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7437 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) | Details |
|
IPA80R1K0CEXKSA2
MOSFET N-CH 800V 5.7A TO220-FP
Infineon Technologies
|
8,161 | 2.28000 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack | Details |
|
NTMFS4C55NT1G
MOSFET N-CH 30V 78A SO8FL
onsemi
|
8,347 | 1.21220 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
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