| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOD2910
MOSFET N CH 100V 6.5A TO252
Alpha & Omega Semiconductor Inc.
|
6,904 | 0.39730 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.5A (Ta), 31A (Tc) | 4.5V, 10V | 24mOhm @ 20A, 10V | 2.7V @ 250µA | 25 nC @ 10 V | ±20V | 1190 pF @ 15 V | - | 2.5W (Ta), 53.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
STH270N8F7-2
MOSFET N-CH 80V 180A H2PAK
STMicroelectronics
|
3,042 | 5.49000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 10V | 2.1mOhm @ 90A, 10V | 4V @ 250µA | 193 nC @ 10 V | ±20V | 13600 pF @ 50 V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H²PAK | TO-263-3, D²Pak (2 Leads + Tab) Variant | Details |
|
IRF840LCLPBF
MOSFET N-CH 500V 8A I2PAK
Vishay Siliconix
|
2,108 | 3.09000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
FQP3N50C
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
1,362 | 0.37000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 365 pF @ 25 V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
IRF3415PBF
MOSFET N-CH 150V 43A TO220AB
Infineon Technologies
|
4,554 | 2.44000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
DMN3112SQ-7
MOSFET BVDSS: 25V~30V SOT23 T&R
Diodes Incorporated
|
6,211 | 0.13430 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 57mOhm @ 5.8A, 10V | 2.2V @ 250µA | - | ±20V | 268 pF @ 5 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
PMZB950UPEL315
NEXPERIA PMZB950UPEL - 20 V, P-C
NXP Semiconductors
|
54,000 | 0.05000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
TSM4NB60CP ROG
MOSFET N-CHANNEL 600V 4A TO252
Taiwan Semiconductor Corporation
|
9 | 2.12000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
FQA8N90C
MOSFET N-CH 900V 8A TO3P
Fairchild Semiconductor
|
3,683 | 1.67000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | 1.9Ohm @ 4A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 | Details |
|
PMG85XP,115
NOW NEXPERIA PMG85XP - SMALL SIG
NXP USA Inc.
|
2,358,419 | 0.05000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Tj) | 2.5V, 4.5V | 115mOhm @ 2A, 4.5V | 1.15V @ 250µA | 7.2 nC @ 4.5 V | ±12V | 560 pF @ 10 V | - | 375mW (Ta), 2.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP | 6-TSSOP, SC-88, SOT-363 | Details |
|
NTHS5445T1
MOSFET P-CH 8V 5.2A CHIPFET
onsemi
|
12,000 | 0.19000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 5.2A (Ta) | 1.8V, 4.5V | 35mOhm @ 5.2A, 4.5V | 450mV @ 250µA (Min) | 26 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead | Details |
|
PSMN3R0-30MLC,115
MOSFET N-CH 30V 70A LFPAK33
Nexperia USA Inc.
|
5,899 | 1.22000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 3.15mOhm @ 25A, 10V | 2.15V @ 1mA | 34.8 nC @ 10 V | ±20V | 2330 pF @ 15 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) | Details |
|
IRFP150MPBF
MOSFET N-CH 100V 42A TO247AC
Infineon Technologies
|
1,262 | 2.42000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
NDF03N60ZG
MOSFET N-CH 600V 3.1A TO220FP
onsemi
|
4,522 | 0.29000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.1A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 18 nC @ 10 V | ±30V | 372 pF @ 25 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
SI7112DN-T1-E3
MOSFET N-CH 30V 11.3A PPAK1212-8
Vishay Siliconix
|
1,304 | 1.83000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27 nC @ 4.5 V | ±12V | 2610 pF @ 15 V | - | 1.5W (Ta) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | Details |
|
IXTZ550N055T2
MOSFET N-CH 55V 550A DE475
IXYS
|
56 | 40.97000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DE475 | 6-SMD, Flat Leads | Details |
|
IRFR2407TRLPBF
MOSFET N-CH 75V 42A DPAK
Infineon Technologies
|
4,796 | 0.89460 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IPB65R660CFDAATMA1
MOSFET N-CH 650V 6A D2PAK
Infineon Technologies
|
8,645 | 3.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20 nC @ 10 V | ±20V | 543 pF @ 100 V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
FDT86106LZ
MOSFET N-CH 100V 3.2A SOT223-4
onsemi
|
33,842 | 1.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.2A (Ta) | 4.5V, 10V | 108mOhm @ 3.2A, 10V | 2.2V @ 250µA | 7 nC @ 10 V | ±20V | 315 pF @ 50 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA | Details |
|
AOD508
MOSFET N-CH 30V 22A/70A TO252
Alpha & Omega Semiconductor Inc.
|
1,468 | 0.94000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.2V @ 250µA | 49 nC @ 10 V | ±20V | 2010 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMT10H009LK3-13
MOSFET BVDSS: 61V~100V TO252 T&R
Diodes Incorporated
|
6,770 | 0.53780 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.5V @ 250µA | 20 nC @ 4.5 V | ±20V | 2309 pF @ 50 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IPI029N06NAKSA1
MOSFET N-CH 60V 24A/100A TO262-3
Infineon Technologies
|
246 | 2.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56 nC @ 10 V | ±20V | 4100 pF @ 30 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
FDMS86150
MOSFET N CH 100V 16A POWER56
onsemi
|
22 | 4.10000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Ta), 60A (Tc) | 6V, 10V | 4.85mOhm @ 16A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4065 pF @ 50 V | - | 2.7W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN | Details |
|
PJA3438_R1_00001
SOT-23, MOSFET
Panjit International Inc.
|
1,325 | 0.49000 | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 500mA (Ta) | 1.8V, 10V | 1.45Ohm @ 500mA, 10V | 1V @ 250µA | 0.95 nC @ 4.5 V | ±20V | 36 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
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