Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A AEC-Q101
XPW4R10ANB,L1XHQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 70A AEC-Q101. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C, package / case 8-PowerVDFN.
In Stock: 8,165
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4970 pF @ 10 V |
| FET Feature | Standard |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DSOP Advance |
| Package / Case | 8-PowerVDFN |
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