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SQ4850EY-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SQ4850EY-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 12A 8SO

SQ4850EY-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 12A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 5,057

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 25 V
FET Feature-
Power Dissipation (Max)6.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Frequently Asked Questions

SQ4850EY-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 12A 8SO

The mounting type of SQ4850EY-T1_GE3 is Surface Mount.

The operating temperature range of SQ4850EY-T1_GE3 is -55°C ~ 175°C (TJ).

The package type of SQ4850EY-T1_GE3 is 8-SOIC (0.154", 3.90mm Width).

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