| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NX7002BKW,115
0.24A, 60V, N CHANNEL MOSFET, SC
Nexperia USA Inc.
|
7,202 | 0.02000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SI3552DV-T1-GE3
MOSFET N/P-CH 30V 6-TSOP
Vishay Siliconix
|
1,844 | 0.87000 | Active | N and P-Channel | Logic Level Gate | 30V | 2.5A | 105mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.2nC @ 5V | - | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | Details |
|
DMC3400SDW-7
MOSFET N/P-CH 30V SOT363
Diodes Incorporated
|
4,519 | 0.45000 | Active | N and P-Channel | Standard | 30V | 650mA, 450mA | 400mOhm @ 590mA, 10V | 1.6V @ 250µA | 1.4nC @ 10V | 55pF @ 15V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
FDG6335N
MOSFET 2N-CH 20V 0.7A SOT-363
onsemi
|
6,393 | 0.57000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 700mA | 300mOhm @ 700mA, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 113pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) | Details |
|
ALD114913SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
|
259 | 5.16000 | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
ZXMHC3F381N8TC
MOSFET 2N/2P-CH 30V 8-SOIC
Diodes Incorporated
|
1,789 | 1.14000 | Active | 2 N and 2 P-Channel (Half Bridge) | Logic Level Gate | 30V | 3.98A, 3.36A | 33mOhm @ 5A, 10V | 3V @ 250µA | 9nC @ 10V | 430pF @ 15V | 870mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMC2053UVT-7
MOSFET BVDSS: 8V-24V TSOT26 T&R
Diodes Incorporated
|
2,788 | 0.13230 | Active | N and P-Channel Complementary | Standard | 20V | 4.6A (Ta), 3.2A (Ta) | 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V | 1V @ 250µA | 3.6nC @ 4.5V, 5.9nC @ 4.5V | 369pF @ 10V, 440pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
ALD212908APAL
MOSFET 2N-CH 10.6V 0.08A 8DIP
Advanced Linear Devices Inc.
|
5,954 | 7.50920 | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
DMP2100UFU-7
MOSFET 2P-CH 20V U-DFN2030-6
Diodes Incorporated
|
4,975 | 0.19100 | Active | 2 P-Channel (Dual) Common Drain | Standard | 20V | 5.7A | 38mOhm @ 3.5A, 10V | 1.4V @ 250µA | 21.4nC @ 10V | 906pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) | Details |
|
SI1029X-T1-GE3
MOSFET N/P-CH 60V SC89-6
Vishay Siliconix
|
3,801 | 0.53000 | Active | N and P-Channel | Logic Level Gate | 60V | 305mA, 190mA | 1.4Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.75nC @ 4.5V | 30pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89 (SOT-563F) | Details |
|
DMN2010UDZ-7
MOSFET 2N-CH 20V 11A U-DFN2535-6
Diodes Incorporated
|
1,621 | 0.90000 | Obsolete | 2 N-Channel (Dual) Common Drain | Standard | 24V | 11A | 7mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 33.2nC @ 4.5V | 2665pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2535-6 | Details |
|
NVMFD5C672NLWFT1G
MOSFET 2N-CH 60V 49A S08FL
onsemi
|
8,133 | 2.46000 | Active | 2 N-Channel (Dual) | Standard | 60V | 12A (Ta), 49A (Tc) | 11.9mOhm @ 10A, 10V | 2.2V @ 30µA | 5.7nC @ 4.5V | 793pF @ 25V | 3.1W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
FDMQ8403
MOSFET 4N-CH 100V 3.1A 12MLP
onsemi
|
620 | 3.59000 | Active | 4 N-Channel (Half Bridge) | Standard | 100V | 3.1A | 110mOhm @ 3A, 10V | 4V @ 250µA | 5nC @ 10V | 215pF @ 15V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | Details |
|
LM2724MX/NOPB
HIGH SPEED 3A SYNCHRONOUS MOSFE
National Semiconductor
|
2,500 | 0.75000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMN3032LFDB-13
MOSFET 2N-CH 30V 6.2A UDFN2020-6
Diodes Incorporated
|
7,018 | 0.13710 | Active | 2 N-Channel (Dual) | Standard | 30V | 6.2A | 30mOhm @ 5.8A, 10V | 2V @ 250µA | 10.6nC @ 10V | 500pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
TSM250N02DCQ RFG
MOSFET 2 N-CH 20V 5.8A 6TDFN
Taiwan Semiconductor Corporation
|
75,206 | 1.06000 | Active | 2 N-Channel (Dual) | Standard | 20V | 5.8A (Tc) | 25mOhm @ 4A, 4.5V | 800mV @ 250µA | 7.7nC @ 4.5V | 775pF @ 10V | 620mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-TDFN (2x2) | Details |
|
DMC1030UFDB-7
MOSFET BVDSS: 8V 24V U-DFN2020-6
Diodes Incorporated
|
1,909 | 0.16110 | Active | N and P-Channel Complementary | Standard | 12V | 5.1A (Ta), 3.9A (Ta) | 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V | 1V @ 250µA | 12.2nC @ 4.5V, 13nC @ 4.5V | 1003pF @ 6V, 1028pF @ 6V | 1.36W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8MICRO
onsemi
|
297,816 | 0.27000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6A | 26mOhm @ 6.5A, 4.5V | 1V @ 250µA | 18nC @ 4.5V | 15pF @ 16V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3), (MICRO8 LEADLESS) | Details |
|
CPH3407-TL-E-ON
N-CHANNEL SILICON MOSFET
onsemi
|
12,000 | 0.18000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
FDS8978
MOSFET 2N-CH 30V 7.5A 8SOIC
onsemi
|
8,658 | 0.93000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A | 18mOhm @ 7.5A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1270pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SI1034CX-T1-GE3
MOSFET 2N-CH 20V SC89-6
Vishay Siliconix
|
9,712 | 0.38000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 610mA (Ta) | 396mOhm @ 500mA, 4.5V | 1V @ 250µA | 2nC @ 8V | 43pF @ 10V | 220mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89 (SOT-563F) | Details |
|
MCCD2007-TP
MOSFET 2N-CH 20V 7A
Micro Commercial Co
|
3,438 | 0.51000 | Active | 2 N-Channel (Dual) Common Drain | Standard | 20V | 7A | 20mOhm @ 7A, 10V | 1V @ 250µA | 15nC @ 4.5V | 1150pF @ 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-WFDFN Exposed Pad | DFN2030-6 | Details |
|
DMN33D8LDWQ-13
MOSFET BVDSS: 25V~30V SOT363 T&R
Diodes Incorporated
|
1,397 | 0.07370 | Active | 2 N-Channel (Dual) | Standard | 30V | 250mA (Ta) | 2.4Ohm @ 250mA, 10V | 1.5V @ 100µA | 1.23nC @ 10V | 48pF @ 5V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
CAB400M12XM3
MOSFET 2 N-CH 1200V MODULE
Wolfspeed, Inc.
|
71 | 690.15000 | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 395A (Tc) | 5.3mOhm @ 400A, 15V | 3.6V @ 92mA | 908nC @ 15V | 2450pF @ 800V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | Details |
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