| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMC3061SVTQ-13
MOSFET BVDSS: 25V~30V TSOT26 T&R
Diodes Incorporated
|
7,339 | 0.14720 | Active | N and P-Channel Complementary | Standard | 30V | 3.4A (Ta), 2.7A (Ta) | 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V | 1.8V @ 250µA, 2.2V @ 250µA | 6.6nC @ 10V, 6.8nC @ 10V | 278pF @ 15V, 287pF @ 15V | 880mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
FDMA1025P
POWER FIELD-EFFECT TRANSISTOR, 3
Fairchild Semiconductor
|
92,860 | 0.27000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 155mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 4.8nC @ 4.5V | 450pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | Details |
|
2N7002KDW-F2-0000HF
N-CH MOSFET 60V 0.34A SOT-363
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
8,887 | 0.29000 | Active | 2 N-Channel (Dual) | Standard | 60V | 340mA (Ta) | 2.5Ohm @ 300mA, 10V | 2.5V @ 250µA | 2.4nC @ 10V | 30pF @ 30V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
AOC2806
MOSFET 2N-CH 20V
Alpha & Omega Semiconductor Inc.
|
391 | 0.67000 | Not For New Designs | 2 N-Channel (Dual) Common Drain | Standard | - | - | - | - | 12.5nC @ 4.5V | - | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 4-XDFN | 4-DFN (1.7x1.7) | Details |
|
FF6MR12KM1PHOSA1
MEDIUM POWER 62MM
Infineon Technologies
|
8 | 532.68000 | Last Time Buy | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-62MM | Details |
|
ALD1105SBL
MOSFET 2N/2P-CH 10.6V 14SOIC
Advanced Linear Devices Inc.
|
1,020 | 5.80000 | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC | Details |
|
MAX8659ETL+
MASTER-SLAVE CPU CORE REGULATOR
Analog Devices Inc./Maxim Integrated
|
838 | 1.07000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
ZXMC3A16DN8TA
MOSFET N/P-CH 30V 8SOIC
Diodes Incorporated
|
3,595 | 1.52000 | Active | N and P-Channel | Logic Level Gate | 30V | 4.9A, 4.1A | 35mOhm @ 9A, 10V | 1V @ 250µA (Min) | 17.5nC @ 10V | 796pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
APTC80TDU15PG
MOSFET 6N-CH 800V 28A SP6-P
Microchip Technology
|
3,721 | 166.31500 | Active | 6 N-Channel (3-Phase Bridge) | Standard | 800V | 28A | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P | Details |
|
PJQ1820_R1_00001
DFN1010-6L, MOSFET
Panjit International Inc.
|
5,000 | 0.41000 | Active | 2 N-Channel (Dual) | - | 20V | 800mA (Ta) | 300mOhm @ 500mA, 4.5V | 1V @ 250µA | 1.1nC @ 4.5V | 46pF @ 10V | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN | DFN1010-6L | Details |
|
DMT3020LSD-13
MOSFET BVDSS: 25V-30V SO-8 T&R 2
Diodes Incorporated
|
7,384 | 0.23460 | Active | 2 N-Channel (Dual) | Standard | 30V | 16A (Tc) | 20mOhm @ 9A, 10V | 2.5V @ 250µA | 7nC @ 10V | 393pF @ 15V | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
ALD212908SAL
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Advanced Linear Devices Inc.
|
8,734 | 5.44500 | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMHC4035LSDQ-13
MOSFET BVDSS: 31V 40V SO-8
Diodes Incorporated
|
1,468 | 0.51740 | Active | 2 N and 2 P-Channel (Half Bridge) | Standard | 40V | 4.5A (Ta), 3.7A (Ta) | 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V | 3V @ 250µA | 5.9nC @ 4.5V, 5.4nC @ 4.5V | 574pF @ 20V, 587pF @ 20V | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMN61D8LVT-13
MOSFET 2N-CH 60V 0.63A TSOT26
Diodes Incorporated
|
2,570 | 0.16800 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 630mA | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | 12.9pF @ 12V | 820mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
NVMFD6H846NLT1G
MOSFET - POWER, DUAL N-CHANNEL,
onsemi
|
9,273 | 2.14000 | Active | 2 N-Channel (Dual) | Standard | 80V | 9.4A (Ta), 31A (Tc) | 15mOhm @ 5A, 10V | 2V @ 21µA | 17nC @ 10V | 900pF @ 40V | 3.2W (Ta), 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
SI3590DV-T1-GE3
MOSFET N/P-CH 30V 2.5A 6-TSOP
Vishay Siliconix
|
300 | 0.95000 | Active | N and P-Channel | Logic Level Gate | 30V | 2.5A, 1.7A | 77mOhm @ 3A, 4.5V | 1.5V @ 250µA | 4.5nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | Details |
|
SIZ270DT-T1-GE3
DUAL N-CHANNEL 100-V (D-S) MOSFE
Vishay Siliconix
|
7,845 | 1.48000 | Active | 2 N-Channel (Dual) | Standard | 100V | 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) | 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V | 2.4V @ 250µA | 27nC @ 10V | 860pF @ 50V, 845pF @ 50V | 4.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | Details |
|
DMP2200UDW-13
MOSFET 2P-CH 20V 0.9A SOT363
Diodes Incorporated
|
4,779 | 0.45000 | Active | 2 P-Channel (Dual) | Standard | 20V | 900mA | 260mOhm @ 880mA, 4.5V | 1.2V @ 250µA | 2.1nC @ 4.5V | 184pF @ 10V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
DMP2200UDW-7
MOSFET 2P-CH 20V 0.9A SOT363
Diodes Incorporated
|
1,586 | 0.45000 | Active | 2 P-Channel (Dual) | Standard | 20V | 900mA | 260mOhm @ 880mA, 4.5V | 1.2V @ 250µA | 2.1nC @ 4.5V | 184pF @ 10V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
2SK2631-TL-E
POWER MOSFET
Sanyo
|
665 | 0.76000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
FDS6975
MOSFET 2P-CH 30V 6A 8SOIC
onsemi
|
8,049 | 1.53000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 6A | 32mOhm @ 6A, 10V | 3V @ 250µA | 20nC @ 5V | 1540pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMT3020LDV-7
MOSFET BVDSS: 25V-30V POWERDI333
Diodes Incorporated
|
4,415 | 0.60000 | Active | 2 N-Channel (Dual) | Standard | 30V | 32A (Tc) | 20mOhm @ 9A, 10V | 2.5V @ 250µA | 7nC @ 10V | 393pF @ 15V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXC) | Details |
|
DMC2025UFDBQ-13
MOSFET BVDSS: 8V~24V U-DFN2020-6
Diodes Incorporated
|
3,005 | 0.12510 | Active | N and P-Channel Complementary | Standard | 20V | 6A (Ta), 3.5A (Ta) | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V | 1V @ 250µA, 1.4V @ 250µA | 12.3nC @ 10V, 15nC @ 8V | 486pF @ 10V, 642pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
CSD87331Q3D
MOSFET 2N-CH 30V 15A 8LSON
Texas Instruments
|
4,643 | 1.40000 | Active | 2 N-Channel (Half Bridge) | Standard | 30V | 15A | - | 2.1V, 1.2V @ 250µA | 3.2nC @ 4.5V | 518pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) | Details |
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