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SI1029X-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI1029X-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V SC89-6

SI1029X-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 60V SC89-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-563, SOT-666, power - max 250mW.

In Stock: 3,801

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C305mA, 190mA
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89 (SOT-563F)

Frequently Asked Questions

SI1029X-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 60V SC89-6

The mounting type of SI1029X-T1-GE3 is Surface Mount.

The operating temperature range of SI1029X-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI1029X-T1-GE3 is SOT-563, SOT-666.

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