| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPD30N03S2L20GBTMA1
MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
|
20,000 | 0.31000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
EPC2040
GANFET NCH 15V 3.4A DIE
EPC
|
65,582 | 1.16000 | Active | N-Channel | GaNFET (Gallium Nitride) | 15 V | 3.4A (Ta) | 5V | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93 nC @ 5 V | - | 105 pF @ 6 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
SIHD5N80AE-GE3
E SERIES POWER MOSFET DPAK (TO-2
Vishay Siliconix
|
2,953 | 1.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 1.35Ohm @ 1.5A, 10V | 4V @ 250µA | 16.5 nC @ 10 V | ±30V | 321 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMP2023UFDF-13
MOSFET P-CH 20V 7.6A 6UDFN
Diodes Incorporated
|
8,493 | 0.26780 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.6A (Ta) | 1.5V, 4.5V | 27mOhm @ 7A, 4.5V | 1V @ 250µA | 27 nC @ 4.5 V | ±8V | 1837 pF @ 15 V | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad | Details |
|
PMF250XN,115
MOSFET N-CH 30V 900MA SOT323-3
NXP USA Inc.
|
5,520 | 0.08000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 900mA (Ta) | 2.5V, 4.5V | 300mOhm @ 900mA, 4.5V | 1.5V @ 250µA | 1.1 nC @ 4.5 V | ±12V | 50 pF @ 15 V | - | 275mW (Ta), 1.065W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 | Details |
|
STWA20N95K5
MOSFET N-CH 950V 17.5A TO247
STMicroelectronics
|
2,056 | 8.87000 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 | Details |
|
TK7R4A10PL,S4X
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
|
7,142 | 1.47000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 7.4mOhm @ 25A, 10V | 2.5V @ 500µA | 44 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 42W (Tc) | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
|
TSM60NB190CZ C0G
MOSFET N-CHANNEL 600V 18A TO220
Taiwan Semiconductor Corporation
|
3,921 | 7.84000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
SI2316BDS-T1-E3
MOSFET N-CH 30V 4.5A SOT23-3
Vishay Siliconix
|
3,749 | 0.62000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Tc) | 4.5V, 10V | 50mOhm @ 3.9A, 10V | 3V @ 250µA | 9.6 nC @ 10 V | ±20V | 350 pF @ 15 V | - | 1.25W (Ta), 1.66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
FQPF12N60
MOSFET N-CH 600V 5.8A TO220F
Fairchild Semiconductor
|
55,453 | 2.66000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.8A (Tc) | 10V | 700mOhm @ 2.9A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack | Details |
|
NTD4302G
MOSFET N-CH 30V 8.4A/68A DPAK
onsemi
|
43,625 | 0.43000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.4A (Ta), 68A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 3V @ 250µA | 80 nC @ 10 V | ±20V | 2400 pF @ 24 V | - | 1.04W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
SQ2364EES-T1_GE3
MOSFET N-CH 60V 2A SOT23-3
Vishay Siliconix
|
6,978 | 0.70000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Tc) | 1.5V, 4.5V | 240mOhm @ 2A, 4.5V | 1V @ 250µA | 2.5 nC @ 4.5 V | ±8V | 330 pF @ 25 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
SI2304BDS-T1-BE3
N-CHANNEL 30-V (D-S) MOSFET
Vishay Siliconix
|
5,550 | 0.50000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.6A (Ta) | 4.5V, 10V | 70mOhm @ 2.5A, 10V | 3V @ 250µA | 7 nC @ 10 V | ±20V | 225 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
NX7002BKMBYL
MOSFET N-CH 60V 350MA DFN1006B-3
Nexperia USA Inc.
|
34,241 | 0.35000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1 nC @ 10 V | ±20V | 23.6 pF @ 10 V | - | 350mW (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN | Details |
|
STL140N4LLF5
MOSFET N-CH 40V 140A POWERFLAT
STMicroelectronics
|
7,968 | 4.38000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 140A (Tc) | 4.5V, 10V | 2.75mOhm @ 16A, 10V | 1V @ 250µA | 45 nC @ 4.5 V | ±22V | 5900 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN | Details |
|
NDD03N50Z-1G
MOSFET N-CH 500V 2.6A IPAK
onsemi
|
2,656 | 0.27000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 10 nC @ 10 V | ±30V | 274 pF @ 25 V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
STW70N60DM6-4
MOSFET N-CH 600V 62A TO247-4
STMicroelectronics
|
170 | 14.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 62A (Tc) | 10V | 42mOhm @ 31A, 10V | 4.75V @ 250µA | 99 nC @ 10 V | ±25V | 4360 pF @ 100 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | Details |
|
SIDR668DP-T1-RE3
N-CHANNEL 100-V (D-S) MOSFET
Vishay Siliconix
|
9,647 | 3.11000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 23.2A (Ta), 95A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 3.4V @ 250µA | 108 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 | Details |
|
SQ2361AEES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23
Vishay Siliconix
|
1,753 | 0.70000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.8A (Tc) | 10V | 170mOhm @ 2.4A, 10V | 2.5V @ 250µA | 15 nC @ 10 V | ±20V | 620 pF @ 30 V | - | 2W (Tc) | -55°C ~ 175°C (TA) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 | Details |
|
NVTFS4C05NTAG
MOSFET N-CH 30V 22A/102A 8WDFN
onsemi
|
7,512 | 1.65000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 102A (Tc) | 4.5V, 10V | 3.6mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 1988 pF @ 15 V | - | 3.2W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
IXFT15N100Q3
MOSFET N-CH 1000V 15A TO268
IXYS
|
26 | 19.29000 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Details |
|
NTTS2P02R2
MOSFET P-CH 20V 2.4A MICRO8
onsemi
|
4,000 | 0.15000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.5V, 4.5V | 90mOhm @ 2.4A, 4.5V | 1.4V @ 250µA | 18 nC @ 4.5 V | ±8V | 550 pF @ 16 V | - | 780mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Details |
|
IXTA32P05T
MOSFET P-CH 50V 32A TO263
IXYS
|
3,493 | 3.07000 | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 32A (Tc) | 10V | 39mOhm @ 500mA, 10V | 4.5V @ 250µA | 46 nC @ 10 V | ±15V | 1975 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
TK15A50D(STA4,Q,M)
MOSFET N-CH 500V 15A TO220SIS
Toshiba Semiconductor and Storage
|
6,719 | 2.87600 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
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