Transistors - FETs, MOSFETs - Single

Mfr Part #	Qty	Price	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB04N03LAT MOSFET N-CH 25V 80A TO263-3 Infineon Technologies	550	1.20000	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	80A (Tc)	4.5V, 10V	3.9mOhm @ 55A, 10V	2V @ 60µA	32 nC @ 5 V	±20V	3877 pF @ 15 V	-	107W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Details
SQ4840EY-T1_GE3 MOSFET N-CH 40V 20.7A 8SO Vishay Siliconix	6,274	3.46000	Active	N-Channel	MOSFET (Metal Oxide)	40 V	20.7A (Tc)	4.5V, 10V	9mOhm @ 14A, 10V	2.5V @ 250µA	62 nC @ 10 V	±20V	2440 pF @ 20 V	-	7.1W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)	Details
IPP041N12N3GXKSA1 MOSFET N-CH 120V 120A TO220-3 Infineon Technologies	4,980	7.30000	Active	N-Channel	MOSFET (Metal Oxide)	120 V	120A (Tc)	10V	4.1mOhm @ 100A, 10V	4V @ 270µA	211 nC @ 10 V	±20V	13800 pF @ 60 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3	Details
IRFB4410ZPBF MOSFET N-CH 100V 97A TO220AB Infineon Technologies	4,000	1.89000	Active	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3	Details
UPA2723T1A-E2-AZ N-CHANNEL POWER MOSFET Renesas Electronics America Inc	15,000	1.94000	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details
IPP80N06S4L07AKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	4,526	0.36000	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	6.7mOhm @ 80A, 10V	2.2V @ 40µA	75 nC @ 10 V	±16V	5680 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3	Details
BUK661R6-30C,118 MOSFET N-CH 30V 120A D2PAK Nexperia USA Inc.	1	1.17000	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	120A (Tc)	10V	1.6mOhm @ 25A, 10V	2.8V @ 1mA	229 nC @ 10 V	±16V	14964 pF @ 25 V	-	306W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Details
HUF75344G3 MOSFET N-CH 55V 75A TO247-3 onsemi	6,748	4.10000	Active	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	8mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 20 V	±20V	3200 pF @ 25 V	-	285W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3	Details
SQ2318BES-T1_GE3 MOSFET N-CH 40V 8A SOT23-3 Vishay Siliconix	5,610	0.57000	Active	N-Channel	MOSFET (Metal Oxide)	40 V	8A (Tc)	4.5V, 10V	26.3mOhm @ 4A, 10V	2.5V @ 250µA	9.4 nC @ 10 V	±20V	500 pF @ 25 V	-	3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3	Details
IPB054N06N3GATMA1 MOSFET N-CH 60V 80A D2PAK Infineon Technologies	7,096	1.96000	Active	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	5.4mOhm @ 80A, 10V	4V @ 58µA	82 nC @ 10 V	±20V	6600 pF @ 30 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Details
IPB032N10N5ATMA1 MOSFET N-CH 100V 166A TO263-7 Infineon Technologies	8,486	6.29000	Active	N-Channel	MOSFET (Metal Oxide)	100 V	166A (Tc)	6V, 10V	3.2mOhm @ 83A, 10V	3.8V @ 125µA	95 nC @ 10 V	±20V	6970 pF @ 50 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	Details
IRL620PBF MOSFET N-CH 200V 5.2A TO220AB Vishay Siliconix	115	1.88000	Active	N-Channel	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	4V, 5V	800mOhm @ 3.1A, 5V	2V @ 250µA	16 nC @ 5 V	±10V	360 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3	Details
TSM900N10CP ROG MOSFET N-CHANNEL 100V 15A TO252 Taiwan Semiconductor Corporation	62,164	1.80000	Active	N-Channel	MOSFET (Metal Oxide)	100 V	15A (Tc)	4.5V, 10V	90mOhm @ 5A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	1480 pF @ 50 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63	Details
IRFIZ14GPBF MOSFET N-CH 60V 8A TO220-3 Vishay Siliconix	5,657	1.72000	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	10V	200mOhm @ 4.8A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab	Details
IPD30N12S3L31ATMA1 MOSFET N-CHANNEL_100+ Infineon Technologies	1,863	0.67720	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details
PJP7NA60_T0_00001 600V N-CHANNEL MOSFET Panjit International Inc.	9,766	1.49000	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	1.2Ohm @ 3.5A, 10V	4V @ 250µA	15.2 nC @ 10 V	±30V	723 pF @ 25 V	-	145W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3	Details
IPD60R1K5CEATMA1 MOSFET N-CH 600V 3.1A TO252-3 Infineon Technologies	23	0.64000	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	600 V	3.1A (Tc)	10V	1.5Ohm @ 1.1A, 10V	3.5V @ 90µA	9.4 nC @ 10 V	±20V	200 pF @ 100 V	-	28W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63	Details
TK39N60W5,S1VF MOSFET N-CH 600V 38.8A TO247 Toshiba Semiconductor and Storage	9,453	8.50000	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	74mOhm @ 19.4A, 10V	4.5V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3	Details
BSC265N10LSFGATMA1 MOSFET N-CH 100V 6.5A/40A TDSON Infineon Technologies	8,251	1.43000	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6.5A (Ta), 40A (Tc)	4.5V, 10V	26.5mOhm @ 20A, 10V	2.4V @ 43µA	21 nC @ 10 V	±20V	1600 pF @ 50 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN	Details
IRF7473TRPBF MOSFET N-CH 100V 6.9A 8SO Infineon Technologies	4,905	1.85000	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6.9A (Ta)	10V	26mOhm @ 4.1A, 10V	5.5V @ 250µA	61 nC @ 10 V	±20V	3180 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)	Details
PMV28UNEAR MOSFET N-CH 20V 4.7A TO236AB Nexperia USA Inc.	5,287	0.39000	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.7A (Ta)	1.8V, 4.5V	32mOhm @ 4.7A, 4.5V	1V @ 250µA	10 nC @ 4.5 V	±8V	490 pF @ 10 V	-	510mW (Ta), 3.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3	Details
SPP15N60C3XKSA1 MOSFET N-CH 650V 15A TO220-3 Infineon Technologies	6,012	5.16000	Active	N-Channel	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	280mOhm @ 9.4A, 10V	3.9V @ 675µA	63 nC @ 10 V	±20V	1660 pF @ 25 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3	Details
IXTN30N100L MOSFET N-CH 1000V 30A SOT227B IXYS	1,058	69.43000	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	30A (Tc)	20V	450mOhm @ 15A, 20V	5.5V @ 250µA	545 nC @ 20 V	±30V	13700 pF @ 25 V	-	800W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC	Details
FDC3512 MOSFET N-CH 80V 3A SUPERSOT6 onsemi	5,248	1.02000	Active	N-Channel	MOSFET (Metal Oxide)	80 V	3A (Ta)	6V, 10V	77mOhm @ 3A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	634 pF @ 40 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	Details

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