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SIHD5N80AE-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIHD5N80AE-GE3

Vishay Siliconix

E SERIES POWER MOSFET DPAK (TO-2

SIHD5N80AE-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. E SERIES POWER MOSFET DPAK (TO-2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,953

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds321 pF @ 100 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Frequently Asked Questions

SIHD5N80AE-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. E SERIES POWER MOSFET DPAK (TO-2

The mounting type of SIHD5N80AE-GE3 is Surface Mount.

The operating temperature range of SIHD5N80AE-GE3 is -55°C ~ 150°C (TJ).

The package type of SIHD5N80AE-GE3 is TO-252-3, DPak (2 Leads + Tab), SC-63.

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