| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC029N025SG
N-CHANNEL POWER MOSFET
Infineon Technologies
|
8,868 | 0.75000 | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2V @ 80µA | 41 nC @ 5 V | ±20V | 5090 pF @ 15 V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN | Details |
|
APT14M100B
MOSFET N-CH 1000V 14A TO247
Microchip Technology
|
5,748 | 7.78800 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | Details |
|
FQPF9N30
MOSFET N-CH 300V 6A TO220F
Fairchild Semiconductor
|
2,338 | 0.70000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 6A (Tc) | 10V | 450mOhm @ 3A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±30V | 740 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack | Details |
|
IXFN26N100P
MOSFET N-CH 1000V 23A SOT-227B
IXYS
|
2,433 | 50.75400 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
BSP125H6327XTSA1
MOSFET N-CH 600V 120MA SOT223-4
Infineon Technologies
|
12,480 | 1.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6 nC @ 10 V | ±20V | 150 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA | Details |
|
IRLML6244TRPBF
MOSFET N-CH 20V 6.3A SOT23
Infineon Technologies
|
657,157 | 0.53000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.3A (Ta) | 2.5V, 4.5V | 21mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9 nC @ 4.5 V | ±12V | 700 pF @ 16 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
AO6401A
MOSFET P-CH 30V 5A 6TSOP
Alpha & Omega Semiconductor Inc.
|
7,115 | 0.15350 | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 2.5V, 10V | 44mOhm @ 5A, 10V | 1.5V @ 250µA | 13 nC @ 4.5 V | ±12V | 1180 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 | Details |
|
NTD40N03R-001
MOSFET N-CH 25V 7.8A/32A IPAK
onsemi
|
3,540 | 0.12000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 7.8A (Ta), 32A (Tc) | 4.5V, 10V | 16.5mOhm @ 10A, 10V | 2V @ 250µA | 5.78 nC @ 4.5 V | ±20V | 584 pF @ 20 V | - | 1.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
IPP034NE7N3GXKSA1
MOSFET N-CH 75V 100A TO220-3
Infineon Technologies
|
1,500 | 4.32000 | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 155µA | 117 nC @ 10 V | ±20V | 8130 pF @ 37.5 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 | Details |
|
SIDR638DP-T1-RE3
N-CHANNEL 40-V (D-S) MOSFET
Vishay Siliconix
|
5,588 | 2.38000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204 nC @ 10 V | +20V, -16V | 10500 pF @ 20 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 | Details |
|
FDB9403L-F085
MOSFET N-CH 40V 110A D2PAK
Fairchild Semiconductor
|
3,408 | 2.26000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 1.2mOhm @ 80A, 10V | 3V @ 250µA | 245 nC @ 10 V | ±20V | 13500 pF @ 20 V | - | 333W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
STL10N3LLH5
MOSFET N-CH 30V 9A POWERFLAT
STMicroelectronics
|
4,563 | 1.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 19mOhm @ 4.5A, 10V | 2.5V @ 250µA | 6 nC @ 4.5 V | ±22V | 900 pF @ 25 V | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN | Details |
|
BUK9515-60E,127
MOSFET N-CH 60V 54A TO220AB
NXP USA Inc.
|
7,085 | 0.37000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 54A (Tc) | 5V, 10V | 13mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5 nC @ 5 V | ±10V | 2651 pF @ 25 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
MMDF4N01HDR2
N-CHANNEL POWER MOSFET
onsemi
|
117,500 | 0.20000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
FDD14AN06LA0
MOSFET N-CH 60V 9.5A/50A TO252AA
Fairchild Semiconductor
|
86,251 | 2.15000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9.5A (Ta), 50A (Tc) | 5V, 10V | 11.6mOhm @ 50A, 10V | 3V @ 250µA | 32 nC @ 5 V | ±20V | 2810 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
AUIRFR4620TRL
MOSFET N-CH 200V 24A DPAK
Infineon Technologies
|
1,876 | 3.73000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
NVBLS0D5N04M8TXG
MOSFET N-CH 40V 300A 8HPSOF
onsemi
|
1,213 | 2.64160 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 0.57mOhm @ 80A, 10V | 4V @ 250µA | 296 nC @ 10 V | ±20V | 15900 pF @ 25 V | - | 429W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN | Details |
|
FDP14AN06LA0
MOSFET N-CH 60V 10A/67A TO220-3
Fairchild Semiconductor
|
14,481 | 2.78000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Ta), 67A (Tc) | 5V, 10V | 11.6mOhm @ 67A, 10V | 3V @ 250µA | 31 nC @ 5 V | ±20V | 2900 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSP
Vishay Siliconix
|
6,831 | 0.62000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.9A (Ta) | 1.8V, 4.5V | 23mOhm @ 2A, 4.5V | 900mV @ 250µA | 110 nC @ 10 V | ±10V | 2800 pF @ 10 V | - | 1.1W (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (1.6x1.6) | 4-UFBGA, WLCSP | Details |
|
NTMFS4898NFT3G
MOSFET N-CH 30V 13.2A/117A 5DFN
onsemi
|
5,671 | 0.60000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.2A (Ta), 117A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 1mA | 49.5 nC @ 10 V | ±20V | 3233 pF @ 12 V | - | 930mW (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
NTR4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3
onsemi
|
12,000 | 0.52000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.8V, 4.5V | 85mOhm @ 1.6A, 4.5V | 1.2V @ 250µA | 8.5 nC @ 4.5 V | ±8V | 675 pF @ 10 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
IXFN130N30
MOSFET N-CH 300V 130A SOT-227B
IXYS
|
3,994 | 42.43200 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 300 V | 130A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
NTR0202PLT1G
MOSFET P-CH 20V 400MA SOT23-3
onsemi
|
5,020 | 0.51000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 400mA (Ta) | 4.5V, 10V | 800mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18 nC @ 10 V | ±20V | 70 pF @ 5 V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
IPAN60R650CEXKSA1
MOSFET N-CH 600V 9.9A TO220
Infineon Technologies
|
691 | 0.88670 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | Super Junction | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack | Details |
Submit your RFQ and our team will source it for you.