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SQ2361AEES-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SQ2361AEES-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 2.8A SSOT23

SQ2361AEES-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 60V 2.8A SSOT23. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TA), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 1,753

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 30 V
FET Feature-
Power Dissipation (Max)2W (Tc)
Operating Temperature-55°C ~ 175°C (TA)
Mounting TypeSurface Mount
Supplier Device Package-
Package / CaseTO-236-3, SC-59, SOT-23-3

Frequently Asked Questions

SQ2361AEES-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 60V 2.8A SSOT23

The mounting type of SQ2361AEES-T1_GE3 is Surface Mount.

The operating temperature range of SQ2361AEES-T1_GE3 is -55°C ~ 175°C (TA).

The package type of SQ2361AEES-T1_GE3 is TO-236-3, SC-59, SOT-23-3.

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