| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTD20N06LG
MOSFET N-CH 60V 20A DPAK
onsemi
|
5,726 | 0.37000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 5V | 48mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 990 pF @ 25 V | - | 1.36W (Ta), 60W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IRFH5006TRPBF
MOSFET N-CH 60V 21A/100A 8PQFN
Infineon Technologies
|
1,209 | 2.42000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100 nC @ 10 V | ±20V | 4175 pF @ 30 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN | Details |
|
SSM3J332R,LF
MOSFET P-CH 30V 6A SOT23F
Toshiba Semiconductor and Storage
|
18,037 | 0.47000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | ±12V | 560 pF @ 15 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads | Details |
|
STL42P6LLF6
MOSFET P-CH 60V 42A POWERFLAT
STMicroelectronics
|
6,470 | 2.01000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Tc) | 4.5V, 10V | 26mOhm @ 4.5A, 10V | 2.5V @ 250µA | 30 nC @ 4.5 V | ±20V | 3780 pF @ 25 V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN | Details |
|
STD85N10F7AG
MOSFET N-CH 100V 70A DPAK
STMicroelectronics
|
7,640 | 2.43000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 10mOhm @ 40A, 10V | 4.5V @ 250µA | 45 nC @ 10 V | ±20V | 3100 pF @ 50 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
PJQ4448P-AU_R2_000A1
40V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
2,730 | 0.62000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta), 42A (Tc) | 4.5V, 10V | 11mOhm @ 8A, 10V | 2.5V @ 250µA | 10 nC @ 4.5 V | ±20V | 1040 pF @ 20 V | - | 2.4W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN | Details |
|
SI4483ADY-T1-GE3
MOSFET P-CH 30V 19.2A 8SO
Vishay Siliconix
|
24,820 | 1.27000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 19.2A (Tc) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2.6V @ 250µA | 135 nC @ 10 V | ±25V | 3900 pF @ 15 V | - | 2.9W (Ta), 5.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
SIHP25N50E-GE3
MOSFET N-CH 500V 26A TO220AB
Vishay Siliconix
|
104 | 3.36000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
STP1N105K3
MOSFET N-CH 1050V 1.4A TO220
STMicroelectronics
|
581 | 1.56000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1050 V | 1.4A (Tc) | 10V | 11Ohm @ 600mA, 10V | 4.5V @ 50µA | 13 nC @ 10 V | ±30V | 180 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
ZVP3306A
MOSFET P-CH 60V 160MA TO92-3
Diodes Incorporated
|
5,103 | 0.88000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 160mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 50 pF @ 18 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) | Details |
|
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STMicroelectronics
|
6,901 | 3.23000 | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 16A (Tc) | 10V | 192mOhm @ 8A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±25V | 1260 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
TK11S10N1L,LQ
MOSFET N-CH 100V 11A DPAK
Toshiba Semiconductor and Storage
|
3,628 | 0.34610 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta) | 4.5V, 10V | 28mOhm @ 5.5A, 10V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 850 pF @ 10 V | - | 65W (Tc) | 175°C | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
SIHA12N60E-GE3
N-CHANNEL 600V
Vishay Siliconix
|
6,498 | 2.65000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack | Details |
|
STP28N60M2
MOSFET N-CH 600V 24A TO220
STMicroelectronics
|
3,711 | 3.63000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±25V | 1370 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
IRFR9310PBF
MOSFET P-CH 400V 1.8A DPAK
Vishay Siliconix
|
2,980 | 1.76000 | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
SQM120N04-1M7L_GE3
MOSFET N-CH 40V 120A TO263
Vishay Siliconix
|
3,131 | 3.60000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.5V @ 250µA | 285 nC @ 10 V | ±20V | 14606 pF @ 20 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
NTMFS4C028NT1G
MOSFET N-CH 30V 16.4A/52A 5DFN
onsemi
|
2,653 | 1.04000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 4.73mOhm @ 30A, 10V | 2.1V @ 250µA | 22.2 nC @ 10 V | ±20V | 1252 pF @ 15 V | - | 2.51W (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
FDD044AN03L
MOSFET N-CH 30V 21A/35A TO252AA
Fairchild Semiconductor
|
4,060 | 0.90000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 35A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118 nC @ 10 V | ±20V | 5160 pF @ 15 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
2N7002 TR PBFREE
MOSFET N-CH 60V 115MA SOT23
Central Semiconductor Corp
|
108,583 | 0.40000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 40V | 50 pF @ 25 V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
EPC2052
GANFET N-CH 100V 8.2A DIE
EPC
|
146,399 | 1.65000 | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 8.2A (Ta) | 5V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5 nC @ 5 V | +6V, -4V | 575 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
G12P10K
P100V,RD(MAX)<200M@-10V,RD(MAX)<
Goford Semiconductor
|
2,468 | 0.74000 | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A | - | 200mOhm @ 6A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1720 pF @ 50 V | - | 57W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
BUK7Y25-80EX
MOSFET N-CH 80V 39A LFPAK56
Nexperia USA Inc.
|
8,909 | 0.47690 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 39A (Tc) | 10V | 25mOhm @ 10A, 10V | 4V @ 1mA | 25.9 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
RJK0657DPA-00#J5A
MOSFET N-CH 60V 20A 8WPAK
Renesas Electronics America Inc
|
21,000 | 0.72000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | - | 13.6mOhm @ 10A, 10V | - | 16 nC @ 10 V | - | 1000 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad | Details |
|
IPI60R280C6XKSA1
MOSFET N-CH 600V 13.8A TO262-3
Infineon Technologies
|
6,125 | 1.37000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
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