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SI8425DB-T1-E1 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI8425DB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V 4WLCSP

SI8425DB-T1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 4WLCSP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-UFBGA, WLCSP.

In Stock: 6,831

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.1W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-WLCSP (1.6x1.6)
Package / Case4-UFBGA, WLCSP

Frequently Asked Questions

SI8425DB-T1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 4WLCSP

The mounting type of SI8425DB-T1-E1 is Surface Mount.

The operating temperature range of SI8425DB-T1-E1 is -55°C ~ 150°C (TJ).

The package type of SI8425DB-T1-E1 is 4-UFBGA, WLCSP.

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