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SI3590DV-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI3590DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6-TSOP

SI3590DV-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 30V 2.5A 6-TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 830mW.

In Stock: 300

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.5A, 1.7A
Rds On (Max) @ Id, Vgs77mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Frequently Asked Questions

SI3590DV-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 30V 2.5A 6-TSOP

The mounting type of SI3590DV-T1-GE3 is Surface Mount.

The operating temperature range of SI3590DV-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI3590DV-T1-GE3 is SOT-23-6 Thin, TSOT-23-6.

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