| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK8A45DA(STA4,Q,M)
MOSFET N-CH 450V 7.5A TO220SIS
Toshiba Semiconductor and Storage
|
6,254 | 1.46000 | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
|
SQ4431EY-T1_BE3
MOSFET P-CH 30V 10.8A 8SOIC
Vishay Siliconix
|
4,311 | 1.08000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.8A (Tc) | 4.5V, 10V | 30mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1265 pF @ 15 V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
SSM6K406TU,LF
MOSFET N-CH 30V 4.4A UF6
Toshiba Semiconductor and Storage
|
3,000 | 0.54000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.4A (Ta) | 4.5V, 10V | 25mOhm @ 2A, 10V | 2.5V @ 1mA | 12.4 nC @ 10 V | ±20V | 490 pF @ 15 V | - | 500mW (Ta) | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads | Details |
|
NDP7050L
MOSFET N-CH 50V 75A TO220-3
Fairchild Semiconductor
|
252 | 2.40000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 5V | 15mOhm @ 37.5A, 5V | 2V @ 250µA | 115 nC @ 5 V | ±20V | 4000 pF @ 25 V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SIR512DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POW
Vishay Siliconix
|
9,933 | 2.23000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25.1A (Ta), 100A (Tc) | 7.5V, 10V | 4.5mOhm @ 20A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 3400 pF @ 50 V | - | 6W (Ta), 96.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
NVTFS4C25NWFTAG
MOSFET N-CH 30V 10.1A/22.1A 8DFN
onsemi
|
7,511 | 1.25000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10.1A (Ta), 22.1A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 2.2V @ 250µA | 10.3 nC @ 10 V | ±20V | 500 pF @ 15 V | - | 3W (Ta), 14.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
NP35N04YUG-E1-AY
MOSFET N-CH 40V 35A 8HSON
Renesas Electronics America Inc
|
1,201 | 0.77990 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 10V | 10mOhm @ 17.5A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±20V | 2850 pF @ 25 V | - | 1W (Ta), 77W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad | Details |
|
PMV20XN,215
MOSFET N-CH 30V 4.8A TO236AB
NXP USA Inc.
|
6,146 | 0.16000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.8A (Ta) | 2.5V, 4.5V | 25mOhm @ 4.8A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±12V | 585 pF @ 15 V | - | 510mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 | Details |
|
PMCM4401VNEAZ
MOSFET N-CH 12V 4.7A 4WLCSP
Nexperia USA Inc.
|
5,172 | 0.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 4.7A (Ta) | 1.5V, 4.5V | 42mOhm @ 3A, 4.5V | 900mV @ 250µA | 9 nC @ 4.5 V | ±8V | 335 pF @ 6 V | - | 400mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (0.78x0.78) | 4-XFBGA, WLCSP | Details |
|
PSMN016-100XS,127
MOSFET N-CH 100V 32.1A TO220F
NXP USA Inc.
|
4,246 | 0.50000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 32.1A (Tc) | 10V | 16mOhm @ 10A, 10V | 4V @ 1mA | 46.2 nC @ 10 V | ±20V | 2404 pF @ 50 V | - | 46.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab | Details |
|
IXFN60N80P
MOSFET N-CH 800V 53A SOT-227B
IXYS
|
7,568 | 40.00000 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 53A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
STP33N65M2
MOSFET N-CH 650V 24A TO220
STMicroelectronics
|
420 | 4.32000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 140mOhm @ 12A, 10V | 4V @ 250µA | 41.5 nC @ 10 V | ±25V | 1790 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
SQM50034EL_GE3
MOSFET N-CH 60V 100A TO263
Vishay Siliconix
|
8,351 | 2.30000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | 2.5V @ 250µA | 90 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
DMN2024UFDF-7
MOSFET N-CH 20V 7.1A 6UDFN
Diodes Incorporated
|
5,394 | 0.12940 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.1A (Ta) | 1.5V, 4.5V | 22mOhm @ 4A, 4.5V | 1V @ 250µA | 0.9 nC @ 10 V | ±10V | 647 pF @ 10 V | - | 960mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad | Details |
|
ISC046N04NM5ATMA1
40V 4.6M OPTIMOS MOSFET SUPERSO8
Infineon Technologies
|
2,948 | 1.46000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 77A (Tc) | 7V, 10V | 4.6mOhm @ 35A, 10V | 3.4V @ 17µA | 21 nC @ 10 V | ±20V | 1400 pF @ 20 V | - | 3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN | Details |
|
APT77N60SC6/TR
MOSFET N-CH 600V 77A D3PAK
Microchip Technology
|
5,990 | 16.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Details |
|
NTLJS2103PTAG
MOSFET P-CH 12V 3.5A 6WDFN
onsemi
|
74,162 | 0.27000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 3.5A (Ta) | 1.2V, 4.5V | 40mOhm @ 3A, 4.5V | 800mV @ 250µA | 15 nC @ 4.5 V | ±8V | 1157 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad | Details |
|
STD13N65M2
MOSFET N-CH 650V 10A DPAK
STMicroelectronics
|
8,547 | 1.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 590 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DI040N03PT-AQ
MOSFET, 30V, 40A, 25W
Diotec Semiconductor
|
5,405 | 1.84300 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | ±20V | 1120 pF @ 15 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (3x3) | 8-PowerVDFN | Details |
|
SSM3K324R,LF
MOSFET N-CH 30V 4A SOT-23F
Toshiba Semiconductor and Storage
|
1,277 | 0.47000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 55mOhm @ 4A, 4.5V | - | - | ±12V | 190 pF @ 30 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads | Details |
|
YJL3415A-F2-0000HF
P-CH MOSFET 20V 5.6A SOT-23-3L
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
4,721 | 0.47000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.6A (Ta) | 1.8V, 4.5V | 42mOhm @ 5.6A, 4.5V | 1V @ 250µA | 10.98 nC @ 4.5 V | ±12V | 1010 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
STN2NF10
MOSFET N-CH 100V 2.4A SOT-223
STMicroelectronics
|
7,934 | 1.27000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.4A (Tc) | 10V | 260mOhm @ 1.2A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 280 pF @ 25 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA | Details |
|
STW65N65DM2AG
MOSFET N-CH 650V 60A TO247
STMicroelectronics
|
4,462 | 11.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
IPB65R380C6ATMA1
MOSFET N-CH 650V 10.6A D2PAK
Infineon Technologies
|
17,860 | 0.85000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
Submit your RFQ and our team will source it for you.