| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDU8586
MOSFET N-CH 20V 35A IPAK
Fairchild Semiconductor
|
6,297 | 0.77000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2480 pF @ 10 V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
DMTH41M8SPS-13
MOSFET N-CH 40V 100A PWRDI5060-8
Diodes Incorporated
|
1,698 | 0.90860 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 1.8mOhm @ 30A, 10V | 4V @ 250µA | 79.5 nC @ 10 V | ±20V | 6968 pF @ 20 V | - | 3.03W | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type K) | 8-PowerTDFN | Details |
|
IXFP8N65X2
MOSFET N-CH 650V 8A TO220
IXYS
|
1,308 | 2.37870 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 450mOhm @ 4A, 10V | 5V @ 250µA | 11 nC @ 10 V | ±30V | 790 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
PSMN5R0-40MLHX
MOSFET N-CH 40V 85A LFPAK33
Nexperia USA Inc.
|
1,502 | 1.27000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 85A (Ta) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.15V @ 1mA | 39 nC @ 10 V | ±20V | 2649 pF @ 20 V | - | 83W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) | Details |
|
RM120N60T2
MOSFET N-CH 60V 120A TO220-3
Rectron USA
|
7,576 | 0.55000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 60A, 10V | 2.4V @ 250µA | - | ±20V | 4000 pF @ 30 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SI7148DP-T1-GE3
MOSFET N-CH 75V 28A PPAK SO-8
Vishay Siliconix
|
6,241 | 3.06000 | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 28A (Tc) | 10V | 11mOhm @ 15A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 2900 pF @ 35 V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
SIHB125N60EF-GE3
MOSFET N-CH 600V 25A D2PAK
Vishay Siliconix
|
2,279 | 4.61000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SISA04DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8
Vishay Siliconix
|
1,380 | 1.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 2.15mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | +20V, -16V | 3595 pF @ 15 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | Details |
|
BUK752R3-40C,127
MOSFET N-CH 40V 100A TO220AB
NXP USA Inc.
|
1,183 | 1.24000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.3mOhm @ 25A, 10V | 4V @ 1mA | 175 nC @ 10 V | ±20V | 11323 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
DMN3009LFVW-13
MOSFET N-CH 30V 60A POWERDI3333
Diodes Incorporated
|
7,416 | 0.24200 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 2000 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN | Details |
|
AOD2544
MOSFET N-CH 150V 6.5A/23A TO252
Alpha & Omega Semiconductor Inc.
|
9,622 | 1.22000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 6.5A (Ta), 23A (Tc) | 4.5V, 10V | 54mOhm @ 5A, 10V | 2.7V @ 250µA | 20 nC @ 10 V | ±20V | 675 pF @ 75 V | - | 6.2W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
STP20NM50
MOSFET N-CH 500V 20A TO220AB
STMicroelectronics
|
939 | 6.18000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±30V | 1480 pF @ 25 V | - | 192W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
RJK0702DPP-E0#T2
MOSFET N-CH 75V 90A TO220FP
Renesas Electronics America Inc
|
1,650 | 2.44000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Ta) | - | 4.8mOhm @ 45A, 10V | - | 89 nC @ 10 V | - | 6450 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
IPS60R800CEAKMA1
CONSUMER
Infineon Technologies
|
4,500 | 0.29780 | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SIHA25N60EFL-GE3
N-CHANNEL 600V
Vishay Siliconix
|
1,000 | 4.96000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 2274 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack | Details |
|
BUK6240-75C,118
MOSFET N-CH 75V 22A DPAK
NXP USA Inc.
|
7,500 | 0.41000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 22A (Tc) | 4.5V, 10V | 46mOhm @ 10A, 10V | 2.8V @ 1mA | 21.4 nC @ 10 V | ±16V | 1280 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
BUK9832-55A/CUX
MOSFET N-CH 55V 12A SOT223
Nexperia USA Inc.
|
9,600 | 0.95000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 12A (Tc) | 4.5V, 10V | 29mOhm @ 8A, 10V | 2V @ 1mA | - | ±10V | 1594 pF @ 25 V | - | 8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA | Details |
|
PSMN3R2-40YLDX
MOSFET N-CH 40V 120A LFPAK56
Nexperia USA Inc.
|
5,557 | 1.36000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.05V @ 1mA | 57 nC @ 10 V | ±20V | 4103 pF @ 20 V | Schottky Diode (Body) | 115W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
NVMFS5C430NLWFAFT1G
MOSFET N-CH 40V 38A/200A 5DFN
onsemi
|
2,595 | 1.34590 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 70 nC @ 10 V | ±20V | 4300 pF @ 20 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
STP8N90K5
MOSFET N-CH 900V 8A TO220
STMicroelectronics
|
6 | 3.77000 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
FDAF75N28
MOSFET N-CH 280V 46A TO3PF
Fairchild Semiconductor
|
1,291 | 2.96000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 280 V | 46A (Tc) | 10V | 41mOhm @ 23A, 10V | 5V @ 250µA | 144 nC @ 10 V | ±30V | 6700 pF @ 25 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack | Details |
|
IXTP24N65X2M
MOSFET N-CH 650V 24A TO220
IXYS
|
7,452 | 4.79000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab | Details |
|
FQP9N08
MOSFET N-CH 80V 9.3A TO220-3
Fairchild Semiconductor
|
3,153 | 0.27000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Tc) | 10V | 210mOhm @ 4.65A, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±25V | 250 pF @ 25 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
IPZA60R024P7XKSA1
MOSFET N-CH 600V 101A TO247-4-3
Infineon Technologies
|
5,520 | 16.37900 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 101A (Tc) | 10V | 24mOhm @ 42A, 10V | 4V @ 2.03mA | 164 nC @ 10 V | ±20V | 7144 pF @ 400 V | - | 291W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 | Details |
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