| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TJ50S06M3L(T6L1,NQ
MOSFET P-CH 60V 50A DPAK
Toshiba Semiconductor and Storage
|
6,160 | 0.85500 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IXTT1N250HV
MOSFET N-CH 2500V 1.5A TO268
IXYS
|
6,938 | 47.40000 | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 1.5A (Tc) | 10V | 40Ohm @ 750mA, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Details |
|
IRFS7434TRL7PP
MOSFET N-CH 40V 240A D2PAK-7
Infineon Technologies
|
2,300 | 3.86000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) | Details |
|
AOK125A60
MOSFET N-CH 600V 28A TO247
Alpha & Omega Semiconductor Inc.
|
99 | 5.62000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 125mOhm @ 14A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±20V | 2993 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | Details |
|
NVTFWS010N10MCLTAG
MOSFET N-CH 100V 11.7A 8WDFN
onsemi
|
1,747 | 0.78890 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11.7A (Ta), 57.8A (Tc) | 4.5V, 10V | 10.6mOhm @ 15A, 10V | 3V @ 85µA | 30 nC @ 10 V | ±20V | 2150 pF @ 50 V | - | 3.2W (Ta), 77.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
DMN3731UFB4-7B
MOSFET N-CH 30V 1.2A 3DFN
Diodes Incorporated
|
9,990 | 0.32000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.2A (Ta) | 1.8V, 4.5V | 460mOhm @ 200mA, 4.5V | 0.95V @ 250µA | 5.5 nC @ 4.5 V | ±8V | 73 pF @ 25 V | - | 520mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN | Details |
|
NTMS4873NFR2G
MOSFET N-CH 30V 7.1A 8SOIC
onsemi
|
66,286 | 0.24000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.1A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 16 nC @ 4.5 V | ±20V | 1900 pF @ 15 V | - | 870mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
FQP17P06
MOSFET P-CH 60V 17A TO220-3
onsemi
|
8,242 | 2.03000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 120mOhm @ 8.5A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±25V | 900 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SQJ418EP-T1_BE3
N-CHANNEL 100-V (D-S) 175C MOSFE
Vishay Siliconix
|
9,460 | 1.24000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 10V | 14mOhm @ 10A, 10V | 3.5V @ 250µA | 35 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
BSC094N06LS5ATMA1
MOSFET N-CHANNEL 60V 47A 8TDSON
Infineon Technologies
|
482 | 1.42000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 47A (Tc) | 4.5V, 10V | 9.4mOhm @ 24A, 10V | 2.3V @ 14µA | 9.4 nC @ 4.5 V | ±20V | 1300 pF @ 30 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN | Details |
|
IRF9321TRPBF
MOSFET P-CH 30V 15A 8SO
Infineon Technologies
|
2,329 | 1.07000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | 2.4V @ 50µA | 98 nC @ 10 V | ±20V | 2590 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) | Details |
|
IXFH90N65X3
MOSFET 90A 650V X3 TO247
IXYS
|
540 | 17.56000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 5.2V @ 4mA | 95 nC @ 10 V | ±20V | 6080 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 | Details |
|
IPP60R125P6XKSA1
MOSFET N-CH 600V 30A TO220-3
Infineon Technologies
|
3,517 | 6.29000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 | Details |
|
SQP120N06-3M5L_GE3
MOSFET N-CH 60V 120A TO220AB
Vishay Siliconix
|
146 | 4.23000 | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 330 nC @ 10 V | ±20V | 14700 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
AOB2500L
MOSFET N-CH 150V 11.5/152A TO263
Alpha & Omega Semiconductor Inc.
|
561 | 4.37000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 11.5A (Ta), 152A (Tc) | 6V, 10V | 6.2mOhm @ 20A, 10V | 3.5V @ 250µA | 136 nC @ 10 V | ±20V | 6460 pF @ 75 V | - | 2.1W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
CSD17484F4
MOSFET N-CH 30V 3A 3PICOSTAR
Texas Instruments
|
53,585 | 0.50000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 1.8V, 8V | 121mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.2 nC @ 4.5 V | 12V | 195 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN | Details |
|
IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1
Infineon Technologies
|
3,163 | 1.63000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 7V, 10V | 1.55mOhm @ 50A, 10V | 3V @ 50µA | 55 nC @ 10 V | ±20V | 3470 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN | Details |
|
AUIRFZ44NSTRL
MOSFET N-CH 55V 49A D2PAK
Infineon Technologies
|
800 | 1.07400 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | - | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | - | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
2SK2803
MOSFET N-CH 450V 3A TO220F
Sanken
|
7,295 | 1.05000 | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 3A (Ta) | 10V | 2.8Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±30V | 340 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack | Details |
|
SI4862DY-T1-E3
MOSFET N-CH 16V 17A 8SO
Vishay Siliconix
|
7,988 | 1.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 16 V | 17A (Ta) | 2.5V, 4.5V | 3.3mOhm @ 25A, 4.5V | 600mV @ 250µA (Min) | 70 nC @ 4.5 V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
AO7407
MOSFET P-CH 20V 1.2A SC70-3
Alpha & Omega Semiconductor Inc.
|
4,594 | 0.11590 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 1.8V, 4.5V | 135mOhm @ 1.2A, 4.5V | 1V @ 250µA | 6.2 nC @ 4.5 V | ±8V | 540 pF @ 10 V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 | Details |
|
FDU6030BL
MOSFET N-CH 30V 10A/42A IPAK
Fairchild Semiconductor
|
3,525 | 0.59000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 42A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 3V @ 250µA | 31 nC @ 10 V | ±20V | 1143 pF @ 15 V | - | 3.8W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
STL25N15F3
MOSFET N-CH 150V 25A POWERFLAT
STMicroelectronics
|
2,932 | 2.14000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 10V | 57mOhm @ 3A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN | Details |
|
FDFMA2P853T
MOSFET P-CH 20V 3A MICROFET
Fairchild Semiconductor
|
32,850 | 0.25000 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±8V | 435 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad | Details |
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