| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCH1436-TL-W
MOSFET N-CH 30V 1.8A SOT563/SCH6
onsemi
|
19,995 | 0.10000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.8A (Ta) | 4V, 10V | 180mOhm @ 900mA, 10V | 2.6V @ 1mA | 2 nC @ 10 V | ±20V | 88 pF @ 10 V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 | Details |
|
IXTA08N100D2-TRL
MOSFET N-CH 1000V 800MA TO263
IXYS
|
4,317 | 1.60720 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 800mA (Tj) | 0V | 21Ohm @ 400mA, 0V | 4V @ 25µA | 14.6 nC @ 5 V | ±20V | 325 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IRFR210PBF-BE3
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
|
9,107 | 1.23000 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | - | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
FDMC007N08LCDC
MOSFET N-CH 80V 64A 8PQFN
onsemi
|
8,000 | 3.20000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 64A (Tc) | 4.5V, 10V | 6.8mOhm @ 22A, 10V | 2.5V @ 130µA | 44 nC @ 10 V | ±20V | 3070 pF @ 40 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3) | 8-PowerWDFN | Details |
|
IPW60R024P7XKSA1
MOSFET N-CH 650V 101A TO247-3-41
Infineon Technologies
|
7,422 | 16.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 101A (Tc) | 10V | 24mOhm @ 42.4A, 10V | 4V @ 2.03mA | 164 nC @ 10 V | ±20V | 7144 pF @ 400 V | - | 291W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 | Details |
|
XP202A0003MR-G
MOSFET P-CH 30V 3A SOT23
Torex Semiconductor Ltd
|
9,092 | 0.38920 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Tj) | 4V, 10V | 45mOhm @ 1.5A, 10V | 2.6V @ 1mA | 10 nC @ 10 V | ±20V | 435 pF @ 10 V | - | 1W | 150°C | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
SSM3K15ACT(TPL3)
MOSFET N-CH 30V 100MA CST3
Toshiba Semiconductor and Storage
|
9,362 | 0.07040 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 | Details |
|
IRFBG20PBF
MOSFET N-CH 1000V 1.4A TO220AB
Vishay Siliconix
|
1,531 | 1.92000 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Tc) | 10V | 11Ohm @ 840mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
IRL3803STRRPBF
MOSFET N-CH 30V 140A D2PAK
Infineon Technologies
|
1,949 | 1.57420 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IXFA7N80P-TRL
MOSFET N-CH 800V 7A TO263
IXYS
|
1,128 | 2.38840 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 1.44Ohm @ 3.5A, 10V | 5V @ 1mA | 32 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IRFD110PBF
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
|
27,755 | 1.77000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-HVMDIP | 4-DIP (0.300", 7.62mm) | Details |
|
IPU95R1K2P7AKMA1
MOSFET N-CH 950V 6A TO251-3
Infineon Technologies
|
5,084 | 1.05780 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15 nC @ 10 V | ±20V | 478 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
APT10090BFLLG
MOSFET N-CH 1000V 12A TO247
Microchip Technology
|
5,602 | 16.65400 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | ±30V | 1969 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | Details |
|
IRF510PBF-BE3
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
|
819 | 1.17000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | - | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
SSM3K341R,LXHF
AECQ MOSFET NCH 60V 6A SOT23F
Toshiba Semiconductor and Storage
|
4,999 | 0.63000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.2W (Ta) | 175°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads | Details |
|
AOWF380A60C
MOSFET N-CH 600V 11A TO262F
Alpha & Omega Semiconductor Inc.
|
2,645 | 0.94420 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tj) | 10V | 380mOhm @ 5.5A, 10V | 3.8V @ 250µA | 20 nC @ 10 V | ±20V | 955 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
APT56M50B2
MOSFET N-CH 500V 56A T-MAX
Microchip Technology
|
3,923 | 11.78100 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ | TO-247-3 Variant | Details |
|
IPB47N10S33ATMA1
MOSFET N-CH 100V 47A TO263-3
Infineon Technologies
|
446 | 0.97000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
CSD19502Q5BT
MOSFET N-CH 80V 100A 8VSON
Texas Instruments
|
1,540 | 3.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Ta) | 6V, 10V | 4.1mOhm @ 19A, 10V | 3.3V @ 250µA | 62 nC @ 10 V | ±20V | 4870 pF @ 40 V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN | Details |
|
SIE822DF-T1-GE3
MOSFET N-CH 20V 50A 10POLARPAK
Vishay Siliconix
|
1,678 | 3.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 50A (Tc) | 4.5V, 10V | 3.4mOhm @ 18.3A, 10V | 3V @ 250µA | 78 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) | Details |
|
FDP15N50
MOSFET N-CH 500V 15A TO220-3
Fairchild Semiconductor
|
4,753 | 2.06000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 380mOhm @ 7.5A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±30V | 1850 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SIRA60DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8
Vishay Siliconix
|
5,851 | 1.55000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 0.94mOhm @ 20A, 10V | 2.2V @ 250µA | 60 nC @ 4.5 V | +20V, -16V | 7650 pF @ 15 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
IPB093N04LG
N-CHANNEL POWER MOSFET
Infineon Technologies
|
20,985 | 0.32000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMT35M7LFV-13
MOSFET N-CH 30V 76A POWERDI3333
Diodes Incorporated
|
8,174 | 0.30150 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 76A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.4V @ 250µA | 36 nC @ 10 V | ±20V | 1667 pF @ 15 V | - | 1.98W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN | Details |
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