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IPA80R1K0CEXKSA2 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPA80R1K0CEXKSA2

Infineon Technologies

MOSFET N-CH 800V 5.7A TO220-FP

IPA80R1K0CEXKSA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 800V 5.7A TO220-FP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 8,161

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds785 pF @ 100 V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

IPA80R1K0CEXKSA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 800V 5.7A TO220-FP

The mounting type of IPA80R1K0CEXKSA2 is Through Hole.

The operating temperature range of IPA80R1K0CEXKSA2 is -40°C ~ 150°C (TJ).

The package type of IPA80R1K0CEXKSA2 is TO-220-3 Full Pack.

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