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SQJQ112ER-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SQJQ112ER-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 100 V (D-S)

SQJQ112ER-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. AUTOMOTIVE N-CHANNEL 100 V (D-S). Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSMD, Gull Wing.

In Stock: 2,868

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C296A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.53mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs272 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15945 pF @ 25 V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerSMD, Gull Wing

Frequently Asked Questions

SQJQ112ER-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. AUTOMOTIVE N-CHANNEL 100 V (D-S)

The mounting type of SQJQ112ER-T1_GE3 is Surface Mount.

The operating temperature range of SQJQ112ER-T1_GE3 is -55°C ~ 175°C (TJ).

The package type of SQJQ112ER-T1_GE3 is 8-PowerSMD, Gull Wing.

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