Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N6627US DIODE GEN PURP 440V 1.75A A-MELF Microchip Technology	5,117	13.54500	Active	Standard	440 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 440 V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C	Details
C3D04060A DIODE SCHOTTKY 600V 4A TO220-2 Wolfspeed, Inc.	5,750	2.86000	Active	Silicon Carbide Schottky	600 V	13.5A (DC)	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	251pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C	Details
TSUP10M45SH 10A, 45V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation	5,016	0.68220	Active	Schottky	45 V	10A (DC)	600 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	1099pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C	Details
VS-30BQ015-M3/9AT DIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division	6,900	0.99000	Active	Schottky	15 V	3A	350 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4 mA @ 15 V	1120pF @ 5V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C	Details
JANS1N5617/TR RECTIFIER UFR,FRR Microchip Technology	4,540	56.20500	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	A, Axial	A, Axial	-65°C ~ 200°C	Details
FR307BULK DIODE GEN PURP 1000V 3A DO201AD EIC SEMICONDUCTOR INC.	8,000	0.24000	Active	Standard	1000 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 1000 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C	Details
SE30PADHM3/I DIODE GEN PURP 200V 3A DO221BC Vishay General Semiconductor - Diodes Division	2,443	0.11550	Active	Standard	200 V	3A	1.16 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.3 µs	5 µA @ 200 V	13pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-55°C ~ 175°C	Details
CDBB260-G DIODE SCHOTTKY 60V 2A DO214AA Comchip Technology	5,822	0.12900	Not For New Designs	Schottky	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C	Details
SSL13H DIODE SCHOTTKY 30V 1A DO214AC Taiwan Semiconductor Corporation	5,120	0.13980	Active	Schottky	30 V	1A	390 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C	Details
M1MA151AT1G DIODE GEN PURP 40V 100MA SC59 onsemi	713,752	0.02000	Obsolete	Standard	40 V	100mA (DC)	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 ns	100 nA @ 35 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	150°C (Max)	Details
VS-8EWH02FNTRR-M3 DIODE GEN PURP 200V 8A D-PAK Vishay General Semiconductor - Diodes Division	7,996	0.41050	Active	Standard	200 V	8A	970 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	24 ns	5 µA @ 200 V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C	Details
1N3768RA DO5 40 AMP SILICON RECTFIER Solid State Inc.	8,495	2.50000	Active	Standard	1000 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-	Details
SBR8U20SP5-13 DIODE SBR 20V 8A POWERDI5 Diodes Incorporated	76	0.84000	Active	Super Barrier	20 V	8A	510 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 150°C	Details
BA159GP-TP DIODE GPP 1A DO-41 Micro Commercial Co	9,867	0.04400	Active	Standard	1000 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	-	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C	Details
SS23L RVG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	1,349	0.26250	Active	Schottky	30 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 30 V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C	Details
PG5406_R2_00001 GLASS PASSIVATED JUNCTION PLASTI Panjit International Inc.	2,020	0.48000	Active	Standard	600 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C	Details
HSM5100J/TR13 DIODE SCHOTTKY 100V 5A DO214AB Microchip Technology	3,370	1.50000	Active	Schottky	100 V	5A	800 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C	Details
MUR130RLG DIODE GEN PURP 300V 1A AXIAL onsemi	784	0.38000	Obsolete	Standard	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 300 V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C	Details
SS2003M-TL-E DIODE SCHOTTKY 30V 2A 6MCPH onsemi	562,184	0.23000	Not For New Designs	Schottky	30 V	2A	400 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	1.25 mA @ 15 V	75pF @ 10V, 1MHz	Surface Mount	6-SMD, Flat Leads	6-MCPH	-55°C ~ 125°C	Details
ESH1PC-M3/84A DIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division	65	0.49000	Active	Standard	150 V	1A	900 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C	Details
V35DM120HM3/I DIODE SCHOTTKY 120V 6.3A TO263AC Vishay General Semiconductor - Diodes Division	5,779	0.82570	Active	Schottky	120 V	6.3A	1.05 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 120 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-40°C ~ 175°C	Details
UES1106 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	225	20.26000	Active	Standard	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	-	Through Hole	A, Axial	-	-55°C ~ 150°C	Details
BYT53C-TR DIODE AVALANCHE 150V 1.9A SOD57 Vishay General Semiconductor - Diodes Division	5,854	0.28710	Active	Avalanche	150 V	1.9A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C	Details
FFPF10U40STU RECTIFIER DIODE Fairchild Semiconductor	1,631	0.41000	Obsolete	Standard	400 V	10A	1.4 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	30 µA @ 400 V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C	Details

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