| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RS1ML RUG
DIODE GEN PURP 800MA SUB SMA
Taiwan Semiconductor Corporation
|
9,687 | 0.17900 | Active | Standard | - | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C | Details |
|
MBRH12045R
DIODE SCHOTTKY 45V 120A D-67
GeneSiC Semiconductor
|
9,965 | 60.03750 | Active | Schottky, Reverse Polarity | 45 V | 120A | 700 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | - | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 150°C | Details |
|
NRVB1240MFST3G
DIODE SCHOTTKY 40V 12A 5DFN
onsemi
|
6,259 | 0.50320 | Active | Schottky | 40 V | 12A | 680 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C | Details |
|
BAS116,235
DIODE GEN PURP 75V 215MA TO236AB
Nexperia USA Inc.
|
6,155 | 0.27000 | Active | Standard | 75 V | 215mA (DC) | 1.25 V @ 150 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 5 nA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 150°C (Max) | Details |
|
B5817WS-F2-0000HF
DIODE SCHOTTKY 20V 1A SOD323
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
2,815 | 0.29000 | Active | Schottky | 20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | 120pF @ 4V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 125°C | Details |
|
AU3PMHM3_A/H
DIODE AVALANCH 1KV 1.4A TO277A
Vishay General Semiconductor - Diodes Division
|
2,723 | 0.67650 | Active | Avalanche | 1000 V | 1.4A | 2.5 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 1000 V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C | Details |
|
SK14F_R1_00001
SURFACE MOUNT SCHOTTKY BARRIER R
Panjit International Inc.
|
1,500 | 0.42000 | Active | Schottky | 40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 70pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C | Details |
|
SR110 A0G
DIODE SCHOTTKY 100V 1A DO204AL
Taiwan Semiconductor Corporation
|
449 | 0.47000 | Active | Schottky | 100 V | 1A | 800 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C | Details |
|
SDT15H50P5-7
SCHOTTKY RECTIFIER PDI5 T&R 1.5K
Diodes Incorporated
|
8,521 | 0.28350 | Active | Schottky | 50 V | 15A | 470 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C | Details |
|
NTE6011
R-600V 40A FAST REC AC
NTE Electronics, Inc
|
40 | 28.41000 | Active | Standard | 600 V | 40A | 1.4 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 50 µA @ 600 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 160°C | Details |
|
CDSQR400B
DIODE GEN PURP 80V 100MA 0402
Comchip Technology
|
4,516 | 0.40000 | Active | Standard | 80 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 80 V | 3pF @ 0.5V, 1MHz | Surface Mount | 0402 (1005 Metric) | 0402/SOD-923F | 125°C (Max) | Details |
|
MURF1560G
DIODE GEN PURP 600V 15A TO220FP
onsemi
|
1,838 | 1.85000 | Active | Standard | 600 V | 15A | 1.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220FP | -65°C ~ 175°C | Details |
|
CMSH3-40 TR13 PBFREE
DIODE SCHOTTKY 40V 3A SMC
Central Semiconductor Corp
|
9,000 | 0.54000 | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C | Details |
|
1N4005G-T
DIODE GEN PURP 600V 1A DO41
Diodes Incorporated
|
42,730 | 0.33000 | Active | Standard | 600 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 600 V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C | Details |
|
CD214A-B240LR
DIO SBD VRRM 40V 2A SMA
Bourns Inc.
|
4,631 | 0.16200 | Active | Schottky | 40 V | 2A | 400 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 115pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 125°C | Details |
|
SE10PJ-M3/84A
DIODE GEN PURP 600V 1A DO220AA
Vishay General Semiconductor - Diodes Division
|
1,070 | 0.49000 | Active | Standard | 600 V | 1A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 780 ns | 5 µA @ 600 V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C | Details |
|
C4D02120A
DIODE SCHOTTKY 1.2KV 2A TO220-2
Wolfspeed, Inc.
|
4,380 | 2.99000 | Active | Silicon Carbide Schottky | 1200 V | 10A (DC) | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 167pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | Details |
|
PMEG3010BER-QX
SCHOTTKYS IN CFP PACKAGES
Nexperia USA Inc.
|
4,374 | 0.11400 | Active | Schottky | 30 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | 170pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 150°C | Details |
|
SS310B-F1-0000HF
DIODE SCHOTTKY 100V 3A DO214AA
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
7,336 | 0.38000 | Active | Schottky | 100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
DSEP15-06AS-TUB
POWER DIODE DISCRETES-FRED TO-26
IXYS
|
7,163 | 2.61000 | Active | Standard | 600 V | 15A | 2.04 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 100 µA @ 600 V | 12pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C | Details |
|
JANS1N5819UR-1/TR
DIODE SMALL-SIGNAL SCHOTTKY
Microchip Technology
|
3,253 | 80.70000 | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | -65°C ~ 150°C | Details |
|
UF101G_R2_00001
GLASS PASSIVATED JUNCTION ULTRAF
Panjit International Inc.
|
4,998 | 0.23000 | Active | Standard | 100 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 100 V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C | Details |
|
SBR8U60P5-13
DIODE SBR 60V 8A POWERDI5
Diodes Incorporated
|
8,337 | 0.99000 | Active | Super Barrier | 60 V | 8A | 530 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600 µA @ 60 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C | Details |
|
LSM340J/TR13
DIODE SCHOTTKY 40V 3A DO214AB
Microchip Technology
|
7,952 | 1.09500 | Active | Schottky | 40 V | 3A | 520 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 40 V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C | Details |
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