Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DFLS240LQ-7 DIODE SCHOTTKY 40V 2A POWERDI123 Diodes Incorporated	875	0.72000	Active	Schottky	40 V	2A	650 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 20 V	90pF @ 10V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-55°C ~ 125°C	Details
MBRB16H60HE3_B/P DIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division	9,277	0.79200	Active	Schottky	60 V	16A	730 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C	Details
VI30120S-M3/4W DIODE SCHOTTKY 30A 120V TO-262AA Vishay General Semiconductor - Diodes Division	6,307	0.79450	Active	Schottky	120 V	30A	1.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 120 V	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262AA	-40°C ~ 150°C	Details
MBR10U45L-TP DIODE SCHOTTKY 45V 10A TO277 Micro Commercial Co	2,491	0.91000	Active	Schottky	45 V	10A	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C	Details
SRT14H DIODE SCHOTTKY 40V 1A TS-1 Taiwan Semiconductor Corporation	4,671	0.06690	Active	Schottky	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C	Details
SK35 SchottkyD, 50V, 3A Diotec Semiconductor	4,796	0.53800	Active	Schottky	50 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C	Details
FDH300ATR RECTIFIER DIODE, 0.2A, 125V, DO- Fairchild Semiconductor	15,000	0.05000	Active	Standard	125 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	1 nA @ 125 V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	175°C (Max)	Details
D1800N44TVFXPSA1 DIODE GEN PURP 4400V 1800A Infineon Technologies	2	398.32000	Active	Standard	4400 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4400 V	-	Chassis Mount	DO-200AC, K-PUK	-	-40°C ~ 160°C	Details
BAT54T-7-F DIODE SCHOTTKY 30V 200MA SOT523 Diodes Incorporated	9,478	0.36000	Active	Schottky	30 V	200mA (DC)	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 10V, 1MHz	Surface Mount	SOT-523	SOT-523	-65°C ~ 125°C	Details
VS-SD403C12S15C DIODE GP 1.2KV 430A DO200AA Vishay General Semiconductor - Diodes Division	2,567	72.40000	Active	Standard	1200 V	430A	1.83 V @ 1350 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	35 mA @ 1200 V	-	Clamp On	DO-200AA, A-PUK	DO-200AA, A-PUK	-	Details
BAT54W,115 DIODE SCHOTTKY 30V 200MA SOT323 Nexperia USA Inc.	1,225	0.19000	Active	Schottky	30 V	200mA (DC)	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	150°C (Max)	Details
SS56B-F1-0000HF DIODE SCHOTTKY 60V 5A DO214AA Yangzhou Yangjie Electronic Technology Co.,Ltd	9,180	0.38000	Active	Schottky	60 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C	Details
DZ540N22KHPSA1 DIODE GEN PURP 2.2KV 732A MODULE Infineon Technologies	3,514	274.10000	Active	Standard	2200 V	732A	1.64 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C	Details
SE70PDHM3_A/H DIODE GEN PURP 200V 2.9A TO277A Vishay General Semiconductor - Diodes Division	1,736	0.41250	Active	Standard	200 V	2.9A	1.05 V @ 7 A	Standard Recovery >500ns, > 200mA (Io)	2.6 µs	20 µA @ 200 V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C	Details
MURB1J_R1_00001 SMB, SUPER Panjit International Inc.	474	0.43000	Active	Standard	600 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 175°C	Details
US1GWF-7 DIODE GEN PURP 400V 1A SOD123F Diodes Incorporated	286,942	0.51000	Active	Standard	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 400 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C	Details
BAV116WSQ-7 DIODE GEN PURP 85V 215MA SOD323 Diodes Incorporated	770,834	0.29000	Active	Standard	85 V	215mA	1.25 V @ 150 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 nA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C	Details
IDH05G65C5XKSA2 DIODE SCHOTTKY 650V 5A TO220-2 Infineon Technologies	9,881	1.82470	Active	Silicon Carbide Schottky	650 V	5A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	160pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C	Details
NTE6006 R-200V 40A FAST REC CC NTE Electronics, Inc	12	15.50000	Active	Standard	200 V	40A	1.4 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	50 µA @ 200 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 160°C	Details
VS-15TQ060S-M3 DIODE SCHOTTKY 60V 15A D2PAK Vishay General Semiconductor - Diodes Division	1,814	1.48000	Active	Schottky	60 V	15A	620 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 µA @ 60 V	720pF @ 5V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C	Details
UF1006-T DIODE GEN PURP 800V 1A DO41 Diodes Incorporated	5,632	0.49000	Active	Standard	800 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C	Details
VS-1N2131A DIODE GEN PURP 200V 60A DO203AB Vishay General Semiconductor - Diodes Division	9,151	10.12000	Active	Standard	200 V	60A	1.3 V @ 188 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 200 V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C	Details
6A10-T/B General e Diode R6 1KV 6A MDD	9,000	0.38500	Active	Standard	1000 V	6A	950 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C	Details
GC20MPS12-220 SIC DIODE 1200V 20A TO-220-2 GeneSiC Semiconductor	3,659	10.80000	Active	Silicon Carbide Schottky	1200 V	94A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 1200 V	1298pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C	Details

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