| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GR3GB
3A -400V - SMB (DO-214AA) - RECT
SURGE
|
250 | 0.20000 | Active | Standard | 400 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
SRAS20150
DIODE SCHOTTKY 150V 20A TO263AB
Taiwan Semiconductor Corporation
|
1,835 | 1.14230 | Active | Schottky | 150 V | 20A | 1.02 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C | Details |
|
DSK12
SCHOTTKY DIODE SOD-123FL 20V 1A
MDD
|
1,309 | 0.08850 | Active | Schottky | 20 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 0.3 mA @ 20 V | 110pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 125°C | Details |
|
EGF1T-E3/5CA
DIODE GEN PURP 1.3KV 1A DO214BA
Vishay General Semiconductor - Diodes Division
|
1,896 | 0.52000 | Active | Standard | 1300 V | 1A | 3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1300 V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -55°C ~ 150°C | Details |
|
1N5805
DO-204AP 2.5 AMP RECTIFIER
Solid State Inc.
|
7,502 | 1.25000 | Active | Standard | 125 V | 2.5A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | - | Through Hole | DO-204AP, Axial | DO-204AP | -65°C ~ 175°C | Details |
|
1N4384GP-E3/54
DIODE GEN PURP 400V 1A DO204AC
Vishay General Semiconductor - Diodes Division
|
2,164 | 0.23180 | Active | Standard | 400 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 400 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C | Details |
|
SS54B-HF
DIODE SCHOTTKY 5A 40V SMB
Comchip Technology
|
4,258 | 0.18140 | Active | Schottky | 40 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 500pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
JANTXV1N5620/TR
STD RECTIFIER
Microchip Technology
|
3,473 | 7.80000 | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | Through Hole | A, Axial | - | -65°C ~ 200°C | Details |
|
RURP815
RECTIFIER DIODE
Harris Corporation
|
3,205 | 0.52000 | Active | Avalanche | 150 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 100 µA @ 150 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C | Details |
|
FESB16FTHE3_A/P
DIODE GEN PURP 300V 16A TO263AB
Vishay General Semiconductor - Diodes Division
|
6,765 | 1.13850 | Active | Standard | 300 V | 16A | 1.3 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 175pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C | Details |
|
1N4448WS-G3-08
DIODE GEN PURP 75V 150MA SOD323
Vishay General Semiconductor - Diodes Division
|
4,339 | 0.04250 | Active | Standard | 75 V | 150mA | 720 mV @ 5 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C | Details |
|
ER3A
SMT SUPER FAST RECTIFIER
SMC Diode Solutions
|
6,946 | 0.12030 | Active | Standard | 50 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 150°C | Details |
|
SBR12U100P5Q-13
SUPER BARRIER RECTIFIER PDI5
Diodes Incorporated
|
1,436 | 1.09000 | Active | Super Barrier | 100 V | 12A | 780 mV @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 250 µA @ 100 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C | Details |
|
G3S06502C
SIC SCHOTTKY DIODE 650V 2A 2-PIN
Global Power Technology-GPT
|
9,174 | 2.43000 | Active | Silicon Carbide Schottky | 650 V | 9A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 123pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C | Details |
|
M1MA151WAT2
DIODE SWITCHING 40V 0.15A 3PIN S
onsemi
|
96,000 | 0.02000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
V20PWM10HM3/I
DIODE SCHOTTKY 100V 20A SLIMDPAK
Vishay General Semiconductor - Diodes Division
|
6,794 | 1.06000 | Active | Schottky | 100 V | 20A | 900 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | 1575pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -40°C ~ 175°C | Details |
|
VS-T40HFL20S05
DIODE GEN PURP 200V 40A D-55
Vishay General Semiconductor - Diodes Division
|
6,228 | 24.99600 | Active | Standard | 200 V | 40A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 100 µA @ 200 V | - | Chassis Mount | D-55 T-Module | D-55 | - | Details |
|
SFC3005A
DIODE SCHOTTKY SILICON 30V 15PF
SMC Diode Solutions
|
1,007 | 0.13400 | Active | Schottky | 30 V | 500mA | 800 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 30 V | 11pF @ 5V, 1MHz | Surface Mount | 0402 (1006 Metric) | 2-WLCSP (1x0.6) | 150°C (Max) | Details |
|
MUR160K_AY_00001
SUPERFAST RECOVERY RECTIFIERS
Panjit International Inc.
|
5,000 | 0.47000 | Active | Standard | 600 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 175°C | Details |
|
PMEG040V050EPDZ
DIODE SCHOTTKY 40V 5A CFP15
Nexperia USA Inc.
|
8,147 | 0.67000 | Active | Schottky | 40 V | 5A | 520 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 13 ns | 120 µA @ 40 V | 395pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) | Details |
|
1F10
DIODE GEN PURP 1000V 500MA R1
Rectron USA
|
3,125 | 0.05500 | Active | Standard | 1000 V | 500mA | 1.8 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | Through Hole | R-1, Axial | R-1 | -55°C ~ 150°C | Details |
|
1SS367,H3F
DIODE SCHOTTKY 10V 100MA SC76
Toshiba Semiconductor and Storage
|
56,854 | 0.22000 | Active | Schottky | 10 V | 100mA | 500 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 µA @ 10 V | 40pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) | Details |
|
SFF2006GH
DIODE GEN PURP 400V 20A ITO220AB
Taiwan Semiconductor Corporation
|
3,378 | 0.81190 | Active | Standard | 400 V | 20A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C | Details |
|
U1D-M3/5AT
DIODE GEN PURP 200V 1A DO214AC
Vishay General Semiconductor - Diodes Division
|
1,239 | 0.52000 | Active | Standard | 200 V | 1A | 920 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 24 ns | 5 µA @ 200 V | 6.8pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
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