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SQJ418EP-T1_BE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SQJ418EP-T1_BE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

SQJ418EP-T1_BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 100-V (D-S) 175C MOSFE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8.

In Stock: 9,460

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

Frequently Asked Questions

SQJ418EP-T1_BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 100-V (D-S) 175C MOSFE

The mounting type of SQJ418EP-T1_BE3 is Surface Mount.

The operating temperature range of SQJ418EP-T1_BE3 is -55°C ~ 175°C (TJ).

The package type of SQJ418EP-T1_BE3 is PowerPAK® SO-8.

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