| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISL6594ACRZ-TR5212
HALF BRIDGE BASED MOSFET DRIVER,
Intersil
|
6,000 | 0.78000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMP3028LSD-13
MOSFET 2P-CH 30V 6A SO-8
Diodes Incorporated
|
10,536 | 0.65000 | Active | 2 P-Channel (Dual) | Standard | 30V | 6A | 25mOhm @ 7A, 10V | 3V @ 250µA | 10.9nC @ 10V | 1241pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMP3164LVT-13
MOSFET BVDSS: 25V-30V TSOT26
Diodes Incorporated
|
4,432 | 0.13030 | Active | 2 P-Channel (Dual) | Standard | - | 2.8A (Ta) | 95mOhm @ 2.7A, 10V | 2.1V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
DMP4025LSD-13
MOSFET 2P-CH 40V 6.9A 8SO
Diodes Incorporated
|
4,670 | 1.03000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 40V | 6.9A | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | 1640pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
SSM6N17FU(TE85L,F)
X34 SMALL LOW RON DUAL NCH MOSFE
Toshiba Semiconductor and Storage
|
361 | 0.51000 | Active | 2 N-Channel (Dual) | Standard | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 7pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Details |
|
ECH8663R-TL-H
MOSFET 2N-CH 30V 8A 8ECH
onsemi
|
3,643 | 1.89000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 20.5mOhm @ 4A, 4.5V | - | 12.3nC @ 4.5V | - | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH | Details |
|
TC6321T-V/9U
MOSFET N/P-CH 200V 2A 8VDFN
Microchip Technology
|
9,257 | 1.48500 | Active | N and P-Channel | Logic Level Gate | 200V | 2A (Ta) | 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | - | 110pF @ 25V, 200pF @ 25V | - | -55°C ~ 175°C | Surface Mount | 8-VDFN Exposed Pad | 8-VDFN (6x5) | Details |
|
DMTH6016LPDQ-13
MOSFET BVDSS: 41V-60V POWERDI506
Diodes Incorporated
|
5,455 | 1.38000 | Active | 2 N-Channel (Dual) | Standard | 60V | 9.2A (Ta), 33.2A (Tc) | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 17nC @ 10V | 864pF @ 30V | 2.5W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | Details |
|
SQJB44EP-T1_GE3
DUAL N-CHANNEL 40-V (D-S) MOSFET
Vishay Siliconix
|
6,454 | 1.66000 | Active | 2 N-Channel (Dual) | Standard | 40V | 30A (Tc) | 5.2mOhm @ 8A, 10V | 2.2V @ 250µA | 50nC @ 10V | 3075pF @ 25V | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
SQJ956EP-T1_GE3
MOSFET 2 N-CH 60V POWERPAK SO8
Vishay Siliconix
|
9,864 | 1.16000 | Active | 2 N-Channel (Dual) | Standard | 60V | 23A (Tc) | 26.7mOhm @ 5.2A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1395pF @ 30V | 34W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
PMDPB85UPE,115
MOSFET 2P-CH 20V 2.9A 6HUSON
Nexperia USA Inc.
|
953 | 0.11900 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.9A | 103mOhm @ 1.3A, 4.5V | 950mV @ 250µA | 8.1nC @ 4.5V | 514pF @ 10V | 515mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-HUSON (2x2) | Details |
|
NTMD3N08LR2
MOSFET PWR N-CHAN DUAL 80V 8SOIC
onsemi
|
119,193 | 0.22000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 80V | 2.3A | 215mOhm @ 2.5A, 10V | 3V @ 250µA | 15nC @ 10V | 480pF @ 25V | 3.1W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
TSM110NB04LDCR RLG
DUAL N-CHANNEL POWER MOSFET 40V,
Taiwan Semiconductor Corporation
|
3,631 | 1.25880 | Active | 2 N-Channel (Dual) | Standard | 40V | 10A (Ta), 48A (Tc) | 11mOhm @ 10A, 10V | 2.5V @ 250µA | 23nC @ 10V | 1269pF @ 20V | 2W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | Details |
|
PMCM650CUNEZ
PMCM650CUNE NAX000 NONE
Nexperia USA Inc.
|
1,977 | 0.24080 | Active | 2 N-Channel (Dual) Common Drain | Standard | - | - | - | 900mV @ 250µA | 13nC @ 4.5V | - | 556mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.48x0.98) | Details |
|
SI5515CDC-T1-E3
MOSFET N/P-CH 20V 4A 1206-8
Vishay Siliconix
|
2,218 | 0.87000 | Active | N and P-Channel | Logic Level Gate | 20V | 4A (Tc) | 36mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | Details |
|
PJL9802_R2_00001
30V DUAL N-CHANNEL ENHANCEMENT M
Panjit International Inc.
|
9,180 | 0.55000 | Active | 2 N-Channel (Dual) | Standard | 30V | 5A (Ta) | 48mOhm @ 5A, 10V | 2.1V @ 250µA | 5.8nC @ 10V | 235pF @ 15V | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
EPC2105
GAN TRANS ASYMMETRICAL HALF BRID
EPC
|
2,362 | 9.16000 | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
TSM6963SDCA RVG
MOSFET 2 P-CH 20V 4.5A 8TSSOP
Taiwan Semiconductor Corporation
|
20,603 | 2.02000 | Active | 2 P-Channel (Dual) | Standard | 20V | 4.5A (Tc) | 30mOhm @ 4.5A, 4.5V | 1V @ 250µA | 20nC @ 4.5V | 1500pF @ 10V | 1.14W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | Details |
|
FDW2503N
SMALL SIGNAL N-CHANNEL MOSFET
Fairchild Semiconductor
|
6,940 | 0.44000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.5A | 21mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 1082pF @ 10V | 600mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | Details |
|
FD6M045N06
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
1,409 | 5.68000 | Obsolete | 2 N-Channel (Dual) | Standard | 60V | 60A | 4.5mOhm @ 40A, 10V | 4V @ 250µA | 87nC @ 10V | 3890pF @ 25V | - | -40°C ~ 150°C (TJ) | Through Hole | EPM15 | EPM15 | Details |
|
NVMFD5C650NLWFT1G
MOSFET 2N-CH 60V 111A S08FL
onsemi
|
8,354 | 5.22000 | Active | 2 N-Channel (Dual) | Standard | 60V | 21A (Ta), 111A (Tc) | 4.2mOhm @ 20A, 10V | 2.2V @ 98µA | 16nC @ 4.5V | 2546pF @ 25V | 3.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
IPB65R280E6
OPTLMOS N-CHANNEL POWER MOSFET
Infineon Technologies
|
10,000 | 1.15000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SIZ320DT-T1-GE3
MOSFET 2N-CH 25V 30/40A 8POWER33
Vishay Siliconix
|
6,126 | 0.99000 | Active | 2 N-Channel (Dual) | Standard | 25V | 30A (Tc), 40A (Tc) | 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V | 2.4V @ 250µA | 8.9nC @ 4.5V, 11.9nC @ 4.5V | 660pF @ 12.5V, 1370pF @ 12.5V | 16.7W, 31W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) | Details |
|
SSM6N35AFE,LF
MOSFET 2 N-CHANNEL 20V 250MA ES6
Toshiba Semiconductor and Storage
|
20 | 0.41000 | Active | 2 N-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 250mW | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | Details |
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