| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMG5802LFX-7
MOSFET 2N-CH 24V 6.5A 6DFN
Diodes Incorporated
|
3,039 | 0.26800 | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 24V | 6.5A | 15mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 31.3nC @ 10V | 1066.4pF @ 15V | 980mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VFDFN Exposed Pad | W-DFN5020-6 | Details |
|
DMN5L06VAK-7
MOSFET 2N-CH 50V 0.28A SOT-563
Diodes Incorporated
|
4,745 | 0.47000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 50V | 280mA | 2Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
SI1926DL-T1-BE3
MOSFET 2N-CH 60V 0.37A SOT363
Vishay Siliconix
|
4,419 | 0.43000 | Active | 2 N-Channel (Dual) | Standard | 60V | 340mA (Ta), 370mA (Tc) | 1.4Ohm @ 340mA, 10V | 2.5V @ 250µA | 1.4nC @ 10V | 18.5pF @ 30V | 300mW (Ta), 510mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | Details |
|
SI7998DP-T1-GE3
MOSFET 2N-CH 30V 25A PPAK SO-8
Vishay Siliconix
|
5,581 | 1.67000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 25A, 30A | 9.3mOhm @ 15A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1100pF @ 15V | 22W, 40W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
DMN2025UFDB-7
MOSFET BVDSS: 8V-24V U-DFN2020-6
Diodes Incorporated
|
1,807 | 0.15920 | Active | 2 N-Channel (Dual) | Standard | 20V | 6A (Ta) | 25mOhm @ 4A, 4.5V | 1V @ 250µA | 12.3nC @ 10V | 486pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
DMT3020LFDBQ-7
MOSFET BVDSS: 25V~30V U-DFN2020-
Diodes Incorporated
|
2,577 | 0.21310 | Active | 2 N-Channel (Dual) | - | 30V | 7.7A (Ta) | 20mOhm @ 9A, 10V | 2.5V @ 250µA | 7nC @ 10V | 393pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
SI4943BDY-T1-E3
MOSFET 2P-CH 20V 6.3A 8-SOIC
Vishay Siliconix
|
4,730 | 2.17000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 6.3A | 19mOhm @ 8.4A, 10V | 3V @ 250µA | 25nC @ 5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SQJ990EP-T1_GE3
MOSFET 2 N-CH 100V POWERPAK SO8
Vishay Siliconix
|
9,268 | 1.48000 | Active | 2 N-Channel (Dual) | Standard | 100V | 34A (Tc) | 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V, 15nC @ 10V | 1390pF @ 25V, 650pF @ 25V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual Asymmetric | Details |
|
FW216A-TL-2W
MOSFET 2N-CH 35V 4.5A 8SOIC
onsemi
|
212,500 | 0.22000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate, 4V Drive | 35V | 4.5A | 64mOhm @ 4.5A, 10V | - | 5.6nC @ 10V | 280pF @ 10V | 2.2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SQ4961EY-T1_GE3
MOSFET DUAL P-CHAN 60V SO8
Vishay Siliconix
|
5,744 | 1.72000 | Active | 2 P-Channel (Dual) | Standard | 60V | 4.4A (Tc) | 85mOhm @ 3.5A, 10V | 2.5V @ 250µA | 40nC @ 10V | 1140pF @ 25V | 3.3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
BSL215CH6327XTSA1
MOSFET N/P-CH 20V 1.5A TSOP-6
Infineon Technologies
|
4,313 | 0.75000 | Active | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.73nC @ 4.5V | 143pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 | Details |
|
SQ9945BEY-T1_BE3
MOSFET 2N-CH 60V 5.4A
Vishay Siliconix
|
3,431 | 1.16000 | Active | 2 N-Channel (Dual) | Standard | 60V | 5.4A (Tc) | 64mOhm @ 3.4A, 10V | 2.5V @ 250µA | 12nC @ 10V | 470pF @ 25V | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SQJB04ELP-T1_GE3
DUAL N-CHANNEL 40-V (D-S) 175C M
Vishay Siliconix
|
5,082 | 1.02000 | Active | 2 N-Channel (Dual) | Standard | 40V | 30A (Tc) | 11mOhm @ 5A, 10V | 2.2V @ 250µA | 20nC @ 10V | 1055pF @ 25V | 27W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
SSM6P35AFU,LF
SMALL SIGNAL MOSFET P-CH X 2 VDS
Toshiba Semiconductor and Storage
|
1,260 | 0.09900 | Active | 2 P-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | 285mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Details |
|
SI4946BEY-T1-GE3
MOSFET 2N-CH 60V 6.5A 8-SOIC
Vishay Siliconix
|
3,342 | 1.55000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 6.5A | 41mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | 840pF @ 30V | 3.7W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SI9926CDY-T1-GE3
MOSFET 2N-CH 20V 8A 8-SOIC
Vishay Siliconix
|
4,648 | 1.11000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8A | 18mOhm @ 8.3A, 4.5V | 1.5V @ 250µA | 33nC @ 10V | 1200pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMG1023UVQ-13
MOSFET BVDSS: 8V-24V SOT563
Diodes Incorporated
|
2,467 | 0.08850 | Active | 2 P-Channel (Dual) | Standard | 20V | 1.03A (Ta) | 750mOhm @ 430mA, 4.5V | 1V @ 250µA | 622pC @ 4.5V | 59pF @ 16V | 530mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
ALD1106SBL
MOSFET 4N-CH 10.6V 14SOIC
Advanced Linear Devices Inc.
|
11,780 | 5.80000 | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC | Details |
|
FSS273-TL-E-SY
N-CHANNEL MOSFET
Sanyo
|
4,000 | 0.49000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
ALD310708APCL
MOSFET 4 P-CH 8V 16DIP
Advanced Linear Devices Inc.
|
1,745 | 8.88480 | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | Details |
|
SSM6N951L,EFF
SMALL SIGNAL MOSFET RDSON: 4.4MO
Toshiba Semiconductor and Storage
|
9,405 | 1.03000 | Active | 2 N-Channel (Dual) Common Drain | Standard | 12V | 8A | 5.1mOhm @ 8A, 4.5V | - | - | - | - | - | Surface Mount | 6-SMD, No Lead | 6-TCSPA (2.14x1.67) | Details |
|
SSM6P15FU,LF
SMALL SIGNAL MOSFET P-CH X 2 VDS
Toshiba Semiconductor and Storage
|
8,598 | 0.40000 | Active | 2 P-Channel (Dual) | Standard | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Details |
|
BUK9K32-100EX
MOSFET 2N-CH 100V 26A 56LFPAK
Nexperia USA Inc.
|
1,953 | 1.81000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 100V | 26A | 31mOhm @ 5A, 10V | 2.1V @ 1mA | 27.3nC @ 5V | 3168pF @ 25V | 64W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
ALD1102ASAL
MOSFET 2P-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
|
3,455 | 9.19000 | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
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