| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN5L06VKQ-7
MOSFET 2 N-CH 50V 280MA SOT563
Diodes Incorporated
|
7,833 | 0.14300 | Active | 2 N-Channel (Dual) | Logic Level Gate | 50V | 280mA (Ta) | 2Ohm @ 50mA, 5V | 1.2V @ 250µA | - | 50pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
PMZ370UNE,315
0.9A, 30V, N CHANNEL, MOSFET, S
Nexperia USA Inc.
|
8,495 | 0.04000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IPG16N10S461ATMA1
MOSFET 2N-CH 100V 16A 8TDSON
Infineon Technologies
|
4,640 | 1.19000 | Active | 2 N-Channel (Dual) | Standard | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | Details |
|
IPG20N04S4L08ATMA1
MOSFET 2N-CH 40V 20A 8TDSON
Infineon Technologies
|
7,278 | 1.71000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | Details |
|
SSM6L61NU,LF
MOSFET N/P-CH 20V 4A UDFN6
Toshiba Semiconductor and Storage
|
3,684 | 0.47000 | Active | N and P-Channel | Standard | 20V | 4A | - | - | - | - | - | - | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) | Details |
|
CSD88599Q5DC
MOSFET 2 N-CH 60V 22-VSON-CLIP
Texas Instruments
|
6,850 | 4.60000 | Active | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 27nC @ 4.5V | 4840pF @ 30V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | Details |
|
IRF7319TRPBF
MOSFET N/P-CH 30V 8SOIC
Infineon Technologies
|
28,952 | 1.37000 | Active | N and P-Channel | Standard | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
PJS6815_S1_00001
20V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
2,359 | 0.45000 | Active | 2 P-Channel (Dual) | Standard | 20V | 3.6A (Ta) | 57mOhm @ 3.6A, 4.5V | 1.2V @ 250µA | 18nC @ 4.5V | 756pF @ 10V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
MCH6631-TL-E-SY
N CHANNEL AND P CHANNEL SILICON
Sanyo
|
93,000 | 0.09000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMN3032LFDB-7
MOSFET 2N-CH 30V 6.2A UDFN2020-6
Diodes Incorporated
|
7,907 | 0.44000 | Active | 2 N-Channel (Dual) | Standard | 30V | 6.2A | 30mOhm @ 5.8A, 10V | 2V @ 250µA | 10.6nC @ 10V | 500pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
FDW2507N
SMALL SIGNAL N-CHANNEL MOSFET
Fairchild Semiconductor
|
28,438 | 0.51000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7.5A | 19mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 28nC @ 4.5V | 2152pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | Details |
|
PJX8807_R1_00001
20V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
4,000 | 0.53000 | Active | 2 P-Channel (Dual) | Standard | 20V | 500mA (Ta) | 1.2Ohm @ 500mA, 4.5V | 1V @ 250µA | 1.4nC @ 4.5V | 38pF @ 10V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
DMC2053UVTQ-13
MOSFET 8V~24V TSOT26
Diodes Incorporated
|
3,337 | 0.16730 | Active | N and P-Channel Complementary | Standard | 20V | 4.6A (Ta), 3.2A (Ta) | 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V | 1V @ 250µA | 3.6nC @ 4.5V, 5.9nC @ 4.5V | 369pF @ 10V, 440pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
DMN66D0LDWQ-13
MOSFET BVDSS: 41V~60V SOT363 T&R
Diodes Incorporated
|
6,703 | 0.05500 | Active | 2 N-Channel (Dual) | Standard | 60V | 217mA (Ta) | 6Ohm @ 115mA, 5V | 2V @ 250µA | 0.9nC @ 10V | 29.3pF @ 25V | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
ALD114913PAL
MOSFET 2N-CH 10.6V 8DIP
Advanced Linear Devices Inc.
|
1,525 | 5.24700 | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
AO4882
MOSFET 2N-CH 40V 8A 8SOIC
Alpha & Omega Semiconductor Inc.
|
3,667 | 0.80000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 8A | 19mOhm @ 8A, 10V | 2.4V @ 250µA | 12nC @ 10V | 415pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
NVJD4401NT1G
MOSFET 2N-CH 20V 0.63A SC88
onsemi
|
1,176 | 0.65000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 630mA | 375mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 | Details |
|
FW276-TL-2H
POWER FIELD-EFFECT TRANSISTOR
Fairchild Semiconductor
|
2,500 | 0.37000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate, 10V Drive | 450V | 700mA (Tc) | 12.1Ohm @ 350mA, 10V | 4.5V @ 1mA | 3.7nC @ 10V | 55pF @ 20V | 1.6W (Tc) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
EAB450M12XM3
450A 1200V SIC HALF-BRIDGE MODUL
Wolfspeed, Inc.
|
8,884 | 1112.62000 | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 450A (Tc) | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 1330nC @ 15V | 38000pF @ 800V | 50mW | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | Details |
|
DMC1030UFDB-13
MOSFET BVDSS: 8V 24V U-DFN2020-6
Diodes Incorporated
|
7,650 | 0.14180 | Active | N and P-Channel Complementary | Standard | 12V | 5.1A (Ta), 3.9A (Ta) | 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V | 1V @ 250µA | 12.2nC @ 4.5V, 13nC @ 4.5V | 1003pF @ 6V, 1028pF @ 6V | 1.36W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
SQJ992EP-T1_GE3
MOSFET 2N-CH 60V 15A POWERPAKSO8
Vishay Siliconix
|
7,003 | 1.46000 | Active | 2 N-Channel (Dual) | Standard | 60V | 15A | 56.2mOhm @ 3.7A, 10V | 2.5V @ 250µA | 12nC @ 10V | 446pF @ 30V | 34W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
FX20KMJ-3#B00
HIGH SPEED SWITCHING P CHANNEL ,
Renesas Electronics America Inc
|
94,471 | 1.65000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMN3035LWN-7
MOSFET 2N-CH 30V 5.5A 8VDFN
Diodes Incorporated
|
1,214 | 0.54000 | Active | 2 N-Channel (Dual) | Standard | 30V | 5.5A | 35mOhm @ 4.8A, 10V | 2V @ 250µA | 9.9nC @ 10V | 399pF @ 15V | 770mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | V-DFN3020-8 (Type N) | Details |
|
SIZ350DT-T1-GE3
MOSFET DUAL N-CHAN 30V POWERPAIR
Vishay Siliconix
|
2,569 | 1.08000 | Active | 2 N-Channel (Dual) | Standard | 30V | 18.5A (Ta), 30A (Tc) | 6.75mOhm @ 15A, 10V | 2.4V @ 250µA | 20.3nC @ 10V | 940pF @ 15V | 3.7W (Ta), 16.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) | Details |
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