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SIZ320DT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SIZ320DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 30/40A 8POWER33

SIZ320DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 25V 30/40A 8POWER33. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 16.7W, 31W.

In Stock: 6,126

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V, 11.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 12.5V, 1370pF @ 12.5V
Power - Max16.7W, 31W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

Frequently Asked Questions

SIZ320DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 25V 30/40A 8POWER33

The mounting type of SIZ320DT-T1-GE3 is Surface Mount.

The operating temperature range of SIZ320DT-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIZ320DT-T1-GE3 is 8-PowerWDFN.

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