Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SKL36 SCHOTTKY SOD-123FL 60V 3A Diotec Semiconductor	15,000	0.13060	Active	Schottky	60 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C	Details
SA264 DIODE FR MELF 1800V 2A Diotec Semiconductor	25,000	0.21280	Active	Standard	1800 V	2A	1.8 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1800 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 175°C	Details
RS1KLW RVG DIODE GEN PURP 800V 1A SOD123W Taiwan Semiconductor Corporation	9,245	0.47000	Active	Standard	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 800 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C	Details
SS5150C SCHOTTKY DIODE SMC 150V 5A MDD	27,000	0.55550	Active	Schottky	150 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 150 V	400pF @ 4V, 1MHz	Surface Mount	-	-	-	Details
SK110-AQ SCHOTTKY SMA 100V 1A Diotec Semiconductor	7,500	0.09180	Active	Schottky	100 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	DO-214AC, SMA	-50°C ~ 150°C	Details
VS-T40HFL20S02 DIODE GEN PURP 200V 40A D-55 Vishay General Semiconductor - Diodes Division	2,146	24.28100	Active	Standard	200 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 200 V	-	Chassis Mount	D-55 T-Module	D-55	-	Details
SJPM-H4VR DIODE GEN PURP 400V 2A SJP Sanken	5,244	0.26400	Active	Standard	400 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	2-SMD, J-Lead	SJP	-40°C ~ 150°C	Details
JAN1N4248/TR RECTIFIER UFR,FRR Microchip Technology	4,398	5.20500	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 800 V	-	Through Hole	A, Axial	-	-65°C ~ 175°C	Details
FE2D DIODE SFR DO-15 200V 2A Diotec Semiconductor	4,000	0.07780	Active	Standard	200 V	2A	980 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 200 V	-	Through Hole	DO-204AC, DO-15, Axial	DO15/DO204AC	-50°C ~ 175°C	Details
VSS8D3M12HM3/I 3A, 120V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division	2,577	0.53000	Active	Schottky	120 V	2A	610 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 120 V	310pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C	Details
US1MFA DIODE GEN PURP 1KV 1A SOD123FA onsemi	61,541	0.51000	Active	Standard	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C	Details
VS-20MQ100-M3/5AT DIODE SCHOTTKY 100V 2A DO214AC Vishay General Semiconductor - Diodes Division	1,535	0.42000	Active	Schottky	100 V	2A	910 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	38pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C	Details
CGRC501-G DIODE GEN PURP 50V 5A DO214AB Comchip Technology	3,017	0.63000	Active	Standard	50 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	150°C (Max)	Details
VS-10ETF06S-M3 DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division	2,528	0.96570	Active	Standard	600 V	10A	1.2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 600 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 150°C	Details
LSM140JE3/TR13 DIODE SCHOTTKY 40V 1A DO214BA Microchip Technology	5,038	0.42000	Active	Schottky	40 V	1A	580 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	-	Surface Mount	DO-214BA	DO-214BA	-55°C ~ 150°C	Details
MBR1045F_T0_00001 10 AMPERES SCHOTTKY BARRIER RECT Panjit International Inc.	8,147	0.78000	Active	Schottky	45 V	10A	700 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 175°C	Details
ES3B-M3/57T DIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division	5,357	0.21010	Active	Standard	100 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C	Details
1N4002RL DIODE GEN PURP 100V 1A DO41 onsemi	20,000	0.02000	Obsolete	Standard	100 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C	Details
ES2J-AQ DIODE SFR SMB 600V 2A Diotec Semiconductor	3,000	0.19590	Active	Standard	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C	Details
SURF1060 DIODE STANDARD 600V ITO220AC SMC Diode Solutions	774	0.62000	Obsolete	Standard	600 V	-	2.2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C	Details
VS-12F40 DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division	5,740	4.04550	Active	Standard	400 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C	Details
HVM16 DIODE GEN PURP 16000V 350MA HVM Rectron USA	3,398	2.10000	Active	Standard	16000 V	350mA	14 V @ 350 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 16000 V	-	Through Hole	Axial	HVM	-20°C ~ 150°C	Details
CDBF0130L-HF DIODE SCHOTTKY 30V 100MA 1005 Comchip Technology	3,328	0.08050	Active	Schottky	30 V	100mA	350 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 10 V	-	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)	Details
FFSH4065BDN-F085 SIC DIODE 650V onsemi	5,585	12.27000	Active	Silicon Carbide Schottky	650 V	20A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C	Details

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