| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
31GF6-E3/54
DIODE GEN PURP 600V 3A DO201AD
Vishay General Semiconductor - Diodes Division
|
18,239 | 0.82000 | Active | Standard | 600 V | 3A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 20 µA @ 600 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C | Details |
|
GS2004HE_R1_00001
SURFACE MOUNT RECTIFIER
Panjit International Inc.
|
2,975 | 0.53000 | Active | Standard | 400 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | 12pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C | Details |
|
UF158G_R2_00001
GLASS PASSIVATED JUNCTION ULTRAF
Panjit International Inc.
|
1,249 | 0.45000 | Active | Standard | 800 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C | Details |
|
NTE6159
R-1KV PRV 150A ANODE CA
NTE Electronics, Inc
|
9,619 | 40.04000 | Active | Standard | 1000 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 mA @ 1000 V | - | Stud Mount | DO-203AA, DO-8, Stud | DO-8 | -65°C ~ 190°C | Details |
|
PMEG100T50ELP-QX
SCHOTTKYS IN CFP PACKAGES
Nexperia USA Inc.
|
2,157 | 0.20430 | Active | Schottky | 100 V | 5A | 895 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 12.5 ns | 1.75 µA @ 100 V | 300pF @ 1V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 175°C | Details |
|
S5J V7G
DIODE GEN PURP 600V 5A DO214AB
Taiwan Semiconductor Corporation
|
9,452 | 0.61910 | Discontinued at Digi-Key | Standard | 600 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C | Details |
|
MBRH12035
DIODE SCHOTTKY 35V 120A D-67
GeneSiC Semiconductor
|
1,698 | 60.03750 | Active | Schottky | 35 V | 120A | 650 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4 mA @ 20 V | - | Chassis Mount | D-67 | D-67 | - | Details |
|
1N5417TR
DIODE AVALANCHE 200V 3A SOD64
Vishay General Semiconductor - Diodes Division
|
7,839 | 0.49500 | Active | Avalanche | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 200 V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C | Details |
|
GS1DWG_R1_00001
SURFACE MOUNT GENERAL PURPOSE RE
Panjit International Inc.
|
1,800 | 0.23000 | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | 7pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C | Details |
|
ES1PD-M3/84A
DIODE GEN PURP 200V 1A DO220AA
Vishay General Semiconductor - Diodes Division
|
7,746 | 0.47000 | Active | Standard | 200 V | 1A | 920 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C | Details |
|
JANTXV1N6623US/TR
RECTIFIER UFR,FRR
Microchip Technology
|
2,349 | 17.56500 | Active | Standard | 880 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 880 V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C | Details |
|
NRVBA120ET3G-VF01
DIODE SCHOTTKY 20V 1A SMA
onsemi
|
5,564 | 0.13000 | Active | Schottky | 20 V | 1A | 530 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 20 V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C | Details |
|
ES07D-M-18
DIODE GEN PURP 200V 500MA DO219
Vishay General Semiconductor - Diodes Division
|
3,616 | 0.13450 | Active | Standard | 200 V | 500mA | 980 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C | Details |
|
MBR1090-E3/4W
DIODE SCHOTTKY 90V 10A TO220AC
Vishay General Semiconductor - Diodes Division
|
4,514 | 0.79990 | Active | Schottky | 90 V | 10A | 800 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C | Details |
|
SGL41-20-E3/97
DIODE SCHOTTKY 20V 1A DO213AB
Vishay General Semiconductor - Diodes Division
|
9,892 | 0.31700 | Active | Schottky | 20 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C | Details |
|
1N5614
DIODE GEN PURP 200V 1A AXIAL
Microchip Technology
|
1,130 | 3.99000 | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Through Hole | A, Axial | - | -65°C ~ 200°C | Details |
|
FFA40UP35STU
DIODE GEN PURP 350V 40A TO3PN
onsemi
|
4 | 2.07000 | Obsolete | Standard | 350 V | 40A | 1.6 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 100 µA @ 350 V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | -65°C ~ 150°C | Details |
|
RS1DFSH
DIODE, FAST, 1A, 200V
Taiwan Semiconductor Corporation
|
9,060 | 0.06440 | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C | Details |
|
JANTXV1N6625/TR
RECTIFIER UFR,FRR
Microchip Technology
|
1,506 | 17.40000 | Active | Standard | 1.1 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 1 µA @ 1.1 V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C | Details |
|
JANTX1N6843CCU3/TR
DIODE POWER SCHOTTKY
Microchip Technology
|
5,448 | 138.67500 | Active | Schottky | 100 V | 15A | 1.27 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | 275pF @ 5V, 1MHz | Surface Mount | 3-SMD, Flat Lead | SMD | -65°C ~ 150°C | Details |
|
1N5623GP-E3/54
DIODE GEN PURP 1KV 1A DO204AC
Vishay General Semiconductor - Diodes Division
|
3,780 | 0.68000 | Active | Standard | 1000 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C | Details |
|
VSS8D3M12-M3/I
3A, 120V, SLIMSMAW TRENCH SKY
Vishay General Semiconductor - Diodes Division
|
365 | 0.48000 | Active | Schottky | 120 V | 2A | 610 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 120 V | 310pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SlimSMAW (DO-221AD) | -40°C ~ 175°C | Details |
|
EAL1J
DIODE SFR DO-213AA 600V 1A
Diotec Semiconductor
|
22,500 | 0.09120 | Active | Avalanche | 600 V | 1A | 1.8 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 3 µA @ 600 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C | Details |
|
20FR50
20 AMP SILCON RECTIFIER DO4 AK
Solid State Inc.
|
1,585 | 1.86700 | Active | Standard, Reverse Polarity | 500 V | 20A | 1.2 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C | Details |
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