Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAL99E6433HTMA1 DIODE GEN PURP 80V 250MA SOT23-3 Infineon Technologies	120,000	0.03000	Not For New Designs	Standard	80 V	250mA (DC)	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 70 V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23	-65°C ~ 150°C	Details
SS26LWH DIODE SCHOTTKY 60V 2A SOD123W Taiwan Semiconductor Corporation	18,755	0.49000	Active	Schottky	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C	Details
S1JL RVG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	4,328	0.06300	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	5 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C	Details
RA251-CT CUT-TAPE VERSION. STANDARD RECO Diotec Semiconductor	6,045	3.67450	Active	Standard	100 V	25A	1.1 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 100 V	-	Surface Mount	RA	RA	-50°C ~ 175°C	Details
UFS340J/TR13 DIODE GEN PURP 400V 3A DO214AB Microchip Technology	1,787	2.50500	Active	Standard	400 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C	Details
UG56G DIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation	7,649	0.25110	Active	Standard	400 V	5A	1.55 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 400 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C	Details
MUR4L60 DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	3,159	0.29030	Active	Standard	600 V	4A	1.28 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C	Details
SDUR1030 DIODE GEN PURP 300V TO220AC SMC Diode Solutions	836	0.85000	Active	Standard	300 V	-	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	30 µA @ 300 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C	Details
R5001010XXWA RECTIFIER STUD MOUNT FORWARD DO- Powerex Inc.	3,706	66.29200	Active	Standard	1000 V	100A	-	Standard Recovery >500ns, > 200mA (Io)	7 µs	30 mA @ 1000 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C	Details
15SQ045 DIODE SCHOTTKY 45V 15A R-6 SMC Diode Solutions	16,500	0.80000	Active	Schottky	45 V	15A	550 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C	Details
BAS116,215 DIODE GEN PURP 75V 215MA SOT23 Nexperia USA Inc.	37,905	0.27000	Active	Standard	75 V	215mA (DC)	1.25 V @ 150 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	150°C (Max)	Details
MMDL770T1G DIODE SCHOTTKY 70V SOD323 onsemi	14,380	0.31000	Active	Schottky	70 V	-	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 35 V	1pF @ 20V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C	Details
BAS20WTHE3-TP DIODE GEN PURP 150V 200MA SOT323 Micro Commercial Co	2,980	0.29000	Active	Standard	150 V	200mA (DC)	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 150 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C	Details
AU3PDHM3_A/H DIODE AVALANCHE 200V 1.7A TO277A Vishay General Semiconductor - Diodes Division	7,874	0.67650	Active	Avalanche	200 V	1.7A	1.9 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 200 V	72pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C	Details
SS3P4LHM3_A/I DIODE SCHOTTKY 40V 3A TO277A Vishay General Semiconductor - Diodes Division	6,484	0.23930	Active	Schottky	40 V	3A	470 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 40 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C	Details
121NQ035-1 DIODE SCHOTTKY 35V 120A PRM1-1 SMC Diode Solutions	7,998	26.73930	Active	Schottky	35 V	120A	650 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 35 V	5200pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 150°C	Details
UG2D DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	3,248	0.14340	Active	Standard	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C	Details
SB1100 RECTIFIER DIODE, SCHOTTKY, 1A, 1 Fairchild Semiconductor	24,023	0.08000	Active	Schottky	100 V	1A	790 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Through Hole	DO-204AC, DO-15, Axial	DO15/DO204AC	-50°C ~ 150°C	Details
SD101CWS-TP DIODE SCHOTTKY 40V 15MA SOD323 Micro Commercial Co	295,714	0.35000	Active	Schottky	40 V	15mA (DC)	900 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 30 V	2.2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C	Details
VB30100S-E3/8W DIODE SCHOTTKY 100V 30A TO263AB Vishay General Semiconductor - Diodes Division	76,336	1.77000	Active	Schottky	100 V	30A	910 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 150°C	Details
SS1FL4-M3/H DIODE SCHOTTKY 40V 1A DO-219AB Vishay General Semiconductor - Diodes Division	6	0.52000	Active	Schottky	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	115pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C	Details
DZ950N36KHPSA1 DIODE GEN PURP 3.6KV 950A MODULE Infineon Technologies	8,240	883.60000	Active	Standard	3600 V	950A	1.78 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 3600 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C	Details
PG5396_R2_00001 GLASS PASSIVATED JUNCTION PLASTI Panjit International Inc.	7,406	0.36000	Active	Standard	500 V	1.5A	1.4 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 500 V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C	Details
STTH812DI DIODE GEN PURP 1.2KV 8A TO220LNS STMicroelectronics	8,771	1.94000	Active	Standard	1200 V	8A	2.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	8 µA @ 1200 V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)	Details

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