| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYM07-100-E3/98
DIODE GEN PURP 100V 500MA DO213
Vishay General Semiconductor - Diodes Division
|
34 | 0.44000 | Active | Standard | 100 V | 500mA | 1.25 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C | Details |
|
CDBA140LL-G
DIODE SCHOTTKY 40V 1A DO214AC
Comchip Technology
|
3,921 | 0.16680 | Not For New Designs | Schottky | 40 V | 1A | 340 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -20°C ~ 80°C | Details |
|
NTE575
R-1000V 1A 70NS
NTE Electronics, Inc
|
12,770 | 0.62000 | Active | Standard | 1000 V | 1A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 50 µA @ 1000 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C | Details |
|
BX320_R1_00001
SMA, SKY
Panjit International Inc.
|
3,375 | 0.44000 | Active | Schottky | 200 V | 3A | 900 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 200 V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C | Details |
|
FR1001-BP
DIODE GEN PURP 50V 10A R-6
Micro Commercial Co
|
6,275 | 0.24200 | Active | Standard | 50 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | - | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C | Details |
|
SS1060FL_R1_00001
SOD-123FL, SKY
Panjit International Inc.
|
580 | 0.39000 | Active | Schottky | 60 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 60 V | - | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C | Details |
|
1N5711-1
DIODE SCHOTTKY 70V 33MA DO35
Microchip Technology
|
516 | 6.63000 | Active | Schottky | 70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C | Details |
|
BAT42WS-E3-08
DIODE SCHOTTKY 30V 200MA SOD323
Vishay General Semiconductor - Diodes Division
|
1,626 | 0.35000 | Active | Schottky | 30 V | 200mA (DC) | 650 mV @ 50 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 25 V | 7pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) | Details |
|
PDS835L-7
SCHOTTKY RECTIFIER PDI5
Diodes Incorporated
|
5,466 | 0.93870 | Active | Schottky | 35 V | 8A | 510 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4 mA @ 35 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 125°C | Details |
|
CS3K-E3/I
DIODE GPP 800V 2A DO-214AB SMC
Vishay General Semiconductor - Diodes Division
|
140 | 0.39000 | Obsolete | Standard | 800 V | 2A | 1.15 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2.8 µs | 5 µA @ 800 V | 26pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C | Details |
|
SMBD1494LT1
SS SOT23 SWCH DIO SPCL
onsemi
|
159,000 | 0.02000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
RGL1MR13
DIODE FR DO-213AA 1000V 1A
Diotec Semiconductor
|
10,000 | 0.08670 | Active | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C | Details |
|
VI20120SG-M3/4W
DIODE SCHOTTKY 20A 120V TO-262AA
Vishay General Semiconductor - Diodes Division
|
3,158 | 0.56180 | Active | Schottky | 120 V | 20A | 1.33 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 120 V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -40°C ~ 150°C | Details |
|
TUAS8J
8A, 600V, STANDARD RECOVERY RECT
Taiwan Semiconductor Corporation
|
2,929 | 0.67000 | Active | Standard | 600 V | 8A (DC) | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 62pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | SMPC4.6U | -55°C ~ 150°C | Details |
|
BAW156/ZL215
RECTIFIER DIODE
NXP USA Inc.
|
156,000 | 0.03000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
S07B-M-18
DIODE GP 100V 700MA DO219AB
Vishay General Semiconductor - Diodes Division
|
8,609 | 0.10160 | Active | Standard | 100 V | 700mA | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 100 V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C | Details |
|
BYM13-30HE3/97
DIODE SCHOTTKY 30V 1A DO213AB
Vishay General Semiconductor - Diodes Division
|
3,623 | 0.21550 | Active | Schottky | 30 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C | Details |
|
SB1030_T0_00001
SCHOTTKY BARRIER RECTIFIERS
Panjit International Inc.
|
7,237 | 0.85000 | Active | Schottky | 30 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C | Details |
|
NTE577
R-SI 1000V 5AMP 70NS
NTE Electronics, Inc
|
3,680 | 4.33000 | Active | Standard | 1000 V | 5A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 10 µA @ 1000 V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -65°C ~ 150°C | Details |
|
6A01-G
DIODE GEN PURP 100V 6A R6
Comchip Technology
|
8,634 | 0.60000 | Active | Standard | 100 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 100pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 125°C | Details |
|
PMEG45T15EPD139
RECTIFIER DIODE, SCHOTTKY
NXP USA Inc.
|
5,000 | 0.30000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
VS-12FL40S05
DIODE GEN PURP 400V 12A DO203AA
Vishay General Semiconductor - Diodes Division
|
1,854 | 5.68020 | Active | Standard | 400 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 50 µA @ 400 V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 150°C | Details |
|
ES1DHM3_A/I
1A 200V SM ULTRAFAST RECT SMA
Vishay General Semiconductor - Diodes Division
|
4,000 | 0.10490 | Active | Standard | 200 V | 1A | 920 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
SB1290
SCHOTTKY D5.4X7.5 90V 12A
Diotec Semiconductor
|
1,250 | 0.65080 | Active | Schottky | 90 V | 12A | 830 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 90 V | - | Through Hole | Axial | Axial | -50°C ~ 150°C | Details |
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