Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
V12P12HM3_A/I DIODE SCHOTTKY 120V 3.9A TO277A Vishay General Semiconductor - Diodes Division	1,251	0.41680	Active	Schottky	120 V	3.9A	830 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 120 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C	Details
G3S12002D SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT	9,481	4.08000	Active	Silicon Carbide Schottky	1200 V	7A (DC)	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	136pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263	-55°C ~ 175°C	Details
LL4148 L0G DIODE GP 75V 150MA MINIMELF Taiwan Semiconductor Corporation	7,151	0.02200	Active	Standard	75 V	150mA	1 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C	Details
S1JFSHMWG DIODE, 1A, 600V, AEC-Q101, SOD-1 Taiwan Semiconductor Corporation	801	0.51000	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C	Details
1N1198RA 20 AMP SILICON RECTIFIER DO-5 Solid State Inc.	7,872	2.50000	Active	Standard, Reverse Polarity	600 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C	Details
GS1G-LTP DIODE GEN PURP 400V 1A DO214AC Micro Commercial Co	509,992	0.29000	Active	Standard	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C	Details
JANTXV1N4148-1/TR SIGNAL/COMPUTER DIODE Microchip Technology	1,593	1.44000	Active	Standard	75 V	200mA (DC)	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 175°C	Details
USL1B-AQ DIODE UFR SOD-123FL 100V 1A Diotec Semiconductor	3,000	0.12730	Active	Standard	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 100 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C	Details
JANTX1N5618US DIODE GEN PURP 600V 1A D5A Microchip Technology	5,973	8.65500	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C	Details
SMS260 SCHOTTKY MELF 60V 2A Diotec Semiconductor	5,000	0.14760	Active	Schottky	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 150°C	Details
S100 DIODE SCHOTTKY 100V 1A SMA onsemi	6,808	0.67000	Active	Schottky	100 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 125°C	Details
2A07GH DIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation	8,354	0.08120	Active	Standard	-	2A	1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C	Details
SF3004PT DIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation	1	3.18000	Active	Standard	200 V	30A	950 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C	Details
NRVTSAF260ET3G DIODE SCHOTTKY 60V 2A SMA-FL onsemi	8,725	0.13930	Active	Schottky	60 V	2A	650 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	12 µA @ 60 V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	-65°C ~ 175°C	Details
ESH1DHE3_A/I DIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division	8,675	0.17330	Active	Standard	200 V	1A	900 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C	Details
PMEG100T10ELXDX SCHOTTKYS IN CFP PACKAGES PMEG10 Nexperia USA Inc.	4,360	0.43000	Active	Schottky	100 V	1A	795 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 100 V	95pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD323HP	175°C	Details
RF 1BV1 DIODE GEN PURP 800V 600MA AXIAL Sanken	802	0.64000	Obsolete	Standard	800 V	600mA	2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 800 V	-	Through Hole	Axial	-	-40°C ~ 150°C	Details
SK10100D2 SCHOTTKY D2PAK 100V 10A Diotec Semiconductor	5,000	0.58760	Active	Schottky	100 V	10A	830 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 100 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-50°C ~ 150°C	Details
VBT3045BP-M3/8W DIODE SCHOTTKY 30A 45V TO-263AB Vishay General Semiconductor - Diodes Division	7,228	0.84120	Active	Schottky	45 V	30A (DC)	700 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 45 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 150°C	Details
UGB8BTHE3_A/I DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division	9,879	0.72600	Active	Standard	100 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C	Details
SGL1-40 SCHOTTKY DO-213AA 40V 1A Diotec Semiconductor	2,500	0.08760	Active	Schottky	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 150°C	Details
SL43HE3_B/I DIODE SCHOTTKY 30V 4A DO214AB Vishay General Semiconductor - Diodes Division	4,379	0.41250	Active	Schottky	30 V	8A	470 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C	Details
SS10PH9-M3/86A DIODE SCHOTTKY 90V 10A TO277A Vishay General Semiconductor - Diodes Division	190	0.90000	Active	Schottky	90 V	10A	880 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 90 V	270pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C	Details
S2G-E3/52T DIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division	19,835	0.52000	Active	Standard	400 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C	Details

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