| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5187US
DIODE GEN PURP 200V 3A AXIAL
Microchip Technology
|
1,194 | 8.89500 | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 2 µA @ 200 V | - | Through Hole | B, Axial | - | -65°C ~ 175°C | Details |
|
CDLL5817
DIODE SCHOTTKY 20V 1A DO213AB
Microchip Technology
|
1,259 | 6.63000 | Active | Schottky | 20 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C | Details |
|
SE30DT12HM3/I
1200V 30A SURFACE-MOUNT HIGH VOL
Vishay General Semiconductor - Diodes Division
|
8,573 | 2.47000 | Active | Standard | 1200 V | 30A (DC) | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | 3.4 µs | 10 µA @ 1200 V | 132pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | -55°C ~ 175°C | Details |
|
VS-40HFR140
DIODE GEN PURP 1.4KV 40A DO203AB
Vishay General Semiconductor - Diodes Division
|
1,136 | 11.43000 | Active | Standard, Reverse Polarity | 1400 V | 40A | 1.5 V @ 125 A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5 mA @ 1400 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 160°C | Details |
|
VSKY02300603-G4-08
DIODE SCHTKY 30V 200MA CLP06032M
Vishay General Semiconductor - Diodes Division
|
3,628 | 0.36000 | Active | Schottky | 30 V | 200mA (DC) | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 30 V | 33pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | CLP0603-2M | 150°C (Max) | Details |
|
UF600M
DIODE UFR D8X7.5 1000V 6A
Diotec Semiconductor
|
48,000 | 0.34310 | Active | Standard | 1000 V | 6A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 1000 V | - | Through Hole | P600, Axial | P600 | -50°C ~ 175°C | Details |
|
GAP3SLT33-214
DIODE SCHOTTKY 3.3KV 300MA DO214
GeneSiC Semiconductor
|
3,818 | 11.83000 | Active | Silicon Carbide Schottky | 3300 V | 300mA (DC) | 2.2 V @ 300 mA | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 3300 V | 42pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C | Details |
|
SFT18GH
DIODE GEN PURP 600V 1A TS-1
Taiwan Semiconductor Corporation
|
9,769 | 0.12450 | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C | Details |
|
MB310_R1_00001
SMC, SKY
Panjit International Inc.
|
935 | 0.49000 | Active | Schottky | 100 V | 3A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 140pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C | Details |
|
HSM2838CTR
DIODE FOR HIGH SPEED SWITCHING
Renesas Electronics America Inc
|
7,049 | 0.14000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
VS-C4PH6006L-N3
DIODE GEN PURP 600V 30A TO247AD
Vishay General Semiconductor - Diodes Division
|
3,739 | 2.47000 | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 50 µA @ 600 V | - | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C | Details |
|
G3S06505H
SIC SCHOTTKY DIODE 650V 5A 2-PIN
Global Power Technology-GPT
|
2,082 | 3.56000 | Active | Silicon Carbide Schottky | 650 V | 15.4A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 424pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C | Details |
|
MBR19AFC_R1_00001
SURFACE MOUNT SCHOTTKY BARRIER R
Panjit International Inc.
|
1,948 | 0.43000 | Active | Schottky | 90 V | 1A | 800 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 90 V | 50pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C | Details |
|
SE10FD-M3/H
DIODE GEN PURP 200V 1A DO219AB
Vishay General Semiconductor - Diodes Division
|
5 | 0.53000 | Active | Standard | 200 V | 1A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 780 ns | 5 µA @ 200 V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C | Details |
|
MURS160-E3/52T
DIODE GEN PURP 600V 2A DO214AA
Vishay General Semiconductor - Diodes Division
|
2,349 | 0.53000 | Active | Standard | 600 V | 2A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C | Details |
|
SMBD1466LT1
SS SOT23 SWCH DIO SPCL
onsemi
|
234,000 | 0.02000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
1N645-1E3/TR
SIGNAL/COMPUTER DIODE
Microchip Technology
|
4,425 | 1.63500 | Active | Standard | 225 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C | Details |
|
1N4448TAP
DIODE GEN PURP 75V 150MA DO35
Vishay General Semiconductor - Diodes Division
|
37,521 | 0.16000 | Active | Standard | 75 V | 150mA | 720 mV @ 5 mA | Small Signal =< 200mA (Io), Any Speed | 8 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | 175°C (Max) | Details |
|
CDBF00340
DIODE SCHOTTKY 40V 30MA 1005
Comchip Technology
|
8,724 | 0.40000 | Active | Schottky | 40 V | 30mA | 370 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 40 V | 1.5pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) | Details |
|
S5M-Q-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
2,974 | 2.33800 | Active | Standard | 1000 V | 8A | 1.1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1 kV | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C | Details |
|
MBRB745
DIODE SCHOTTKY 45V 7.5A D2PAK
SMC Diode Solutions
|
6,312 | 0.26430 | Active | Schottky | 45 V | 7.5A | 840 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C | Details |
|
SS22L RVG
DIODE SCHOTTKY 20V 2A SUB SMA
Taiwan Semiconductor Corporation
|
7,305 | 0.64000 | Active | Schottky | 20 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 20 V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C | Details |
|
ST1K
DIODE STD SMA 800V 1A
Diotec Semiconductor
|
7,500 | 0.01850 | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 800 V | - | Surface Mount | DO-214AC, SMA | DO-214AC, SMA | -50°C ~ 150°C | Details |
|
1N5819HW-7-F
DIODE SCHOTTKY 40V 1A SOD123
Diodes Incorporated
|
6,850 | 0.46000 | Active | Schottky | 40 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 60pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C | Details |
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