Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
STPS2L60A DIODE SCHOTTKY 60V 2A SMA STMicroelectronics	3,142	0.69000	Active	Schottky	60 V	2A	600 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	150°C (Max)	Details
BAS19W_R1_00001 SURFACE MOUNT SWITCHING DIODE Panjit International Inc.	2,949	0.22000	Active	Standard	100 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C	Details
95SQ015 DIODE SCHOTTKY 15V 9A DO201AD SMC Diode Solutions	5,187	0.65000	Active	Schottky	15 V	9A	340 mV @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	1300pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C	Details
VS-10ETS08S-M3 DIODE GEN PURP 800V 10A D2PAK Vishay General Semiconductor - Diodes Division	2,025	1.81000	Active	Standard	800 V	10A	1.1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 800 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 150°C	Details
V8P45HM3_A/H DIODE SCHOTTKY 45V 8A TO277A Vishay General Semiconductor - Diodes Division	9,039	0.36300	Active	Schottky	45 V	8A	580 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C	Details
SL110PL-TP DIODE SCHOTTKY 100V 1A SOD123FL Micro Commercial Co	5,890	0.41000	Active	Schottky	100 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C	Details
ES3C-M3/57T DIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division	2,840	0.21010	Active	Standard	150 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C	Details
US2MA-TP DIODE GEN PURP 1KV 2A DO214AC Micro Commercial Co	90,615	0.52000	Active	Standard	1000 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	28pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C	Details
UF5404-E3/73 DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division	7,482	0.66000	Active	Standard	400 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	45pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C	Details
1N4946 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	9,265	6.00000	Active	Standard	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	25pF @ 12V, 1MHz	Through Hole	A, Axial	Axial	-65°C ~ 175°C	Details
RS1MAL 500NS, 1A, 1000V, FAST RECOVERY Taiwan Semiconductor Corporation	3,816	0.51000	Active	Standard	1000 V	1A (DC)	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 1000 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C	Details
S1PG-M3/85A DIODE GEN PURP 400V 1A DO220AA Vishay General Semiconductor - Diodes Division	4,580	0.06140	Active	Standard	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	1 µA @ 400 V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C	Details
DHG10I1200PA DIODE GEN PURP 1.2KV 10A TO220AC IXYS	6,754	2.21000	Active	Standard	1200 V	10A	2.22 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C	Details
SS10PH10HM3_A/I DIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division	9,369	0.98000	Active	Schottky	100 V	10A	880 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	270pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C	Details
VS-8EWF02STRR-M3 DIODE GEN PURP 200V 8A D-PAK Vishay General Semiconductor - Diodes Division	6,654	2.01600	Active	Standard	200 V	8A	1.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	100 µA @ 200 V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C	Details
PMEG3005AEV,115 DIODE SCHOTTKY 30V 500MA SOT666 Nexperia USA Inc.	60,000	0.03400	Obsolete	Schottky	30 V	500mA (DC)	430 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	70pF @ 1V, 1MHz	Surface Mount	SOT-563, SOT-666	SOT-666	-65°C ~ 150°C	Details
NTE6039 R-500 PRV 60A ANODE CASE NTE Electronics, Inc	18	16.55000	Active	Standard	400 V	60A	1.4 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 400 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 175°C	Details
FFSH20120A-F155 SIC DIODE GEN1.0 TO247-2L LL onsemi	9,345	8.66520	Active	Silicon Carbide Schottky	1200 V	30A (DC)	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C	Details
VS-6FLR100S05 DIODE GEN PURP 1KV 6A DO203AA Vishay General Semiconductor - Diodes Division	6,343	6.69830	Active	Standard, Reverse Polarity	1000 V	6A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 1000 V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C	Details
SE20PB-M3/84A DIODE GEN PURP 100V 1.6A DO220AA Vishay General Semiconductor - Diodes Division	2,900	0.52000	Active	Standard	100 V	1.6A	1.05 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 100 V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C	Details
VS-SD823C12S20C DIODE GEN PURP 1.2KV 810A B-43 Vishay General Semiconductor - Diodes Division	7,347	97.90080	Active	Standard	1200 V	810A	2.2 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	50 mA @ 1200 V	-	Stud Mount	DO-200AA, A-PUK	B-43, Hockey PUK	-	Details
BAS116WS-AU_R1_000A1 SOD-323, SWITCHING Panjit International Inc.	1,180	0.23000	Active	Standard	75 V	200mA (DC)	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C	Details
SK510L-TP DIODE SCHOTTKY 100V 5A DO214AB Micro Commercial Co	66,719	0.49000	Active	Schottky	100 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C	Details
UJ3D06516TS 650V 16A SIC SCHOTTKY DIODE G3, UnitedSiC	676	7.00000	Active	Silicon Carbide Schottky	650 V	16A (DC)	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	500pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C	Details

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