| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ESH3C-E3/57T
DIODE GEN PURP 150V 3A DO214AB
Vishay General Semiconductor - Diodes Division
|
4,045 | 0.32080 | Active | Standard | 150 V | 3A | 900 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 5 µA @ 150 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C | Details |
|
VS-20ETF10S-M3
DIODE GEN PURP 1KV 20A TO263AB
Vishay General Semiconductor - Diodes Division
|
1,914 | 1.56320 | Active | Standard | 1000 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1000 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C | Details |
|
SK1840D2
SCHOTTKY D2PAK 40V 18A
Diotec Semiconductor
|
5,000 | 0.63050 | Active | Schottky | 40 V | 18A | 580 mV @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -50°C ~ 150°C | Details |
|
IMBD4448-E3-08
DIODE GEN PURP 75V 150MA SOT23
Vishay General Semiconductor - Diodes Division
|
5,174 | 0.04110 | Active | Standard | 75 V | 150mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 2.5 µA @ 70 V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) | Details |
|
BYWB29-150-E3/81
DIODE GEN PURP 150V 8A TO263AB
Vishay General Semiconductor - Diodes Division
|
1,624 | 0.84540 | Active | Standard | 150 V | 8A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 150 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C | Details |
|
DSEI8-06AS-TRL
DIODE GEN PURP 600V 8A TO263AB
IXYS
|
6,163 | 1.01240 | Active | Standard | 600 V | 8A | 1.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 600 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA | -40°C ~ 150°C | Details |
|
ES2HA R3G
DIODE GEN PURP 500V 2A DO214AC
Taiwan Semiconductor Corporation
|
3,072 | 0.77000 | Discontinued at Digi-Key | Standard | 500 V | 2A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 500 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
IDH10SG60CXKSA2
DIODE SCHOTTKY 600V 10A TO220-2
Infineon Technologies
|
4,791 | 7.12000 | Active | Silicon Carbide Schottky | 600 V | 10A (DC) | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | Details |
|
STPS3150RL
DIODE SCHOTTKY 150V 3A DO201AD
STMicroelectronics
|
85 | 0.71000 | Active | Schottky | 150 V | 3A | 820 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 µA @ 150 V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) | Details |
|
IDH04G65C5XKSA2
DIODE SCHOTTKY 650V 4A TO220-2-1
Infineon Technologies
|
4,500 | 2.56000 | Active | Silicon Carbide Schottky | 650 V | 4A (DC) | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | Details |
|
CSHD10-45L TR13 PBFREE
DIODE SCHOTTKY 45V 10A DPAK
Central Semiconductor Corp
|
6,582 | 1.01000 | Active | Schottky | 45 V | 10A | 750 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C | Details |
|
MB2H60AL_R1_00001
ULTRA LOW IR SCHOTTKY BARRIER RE
Panjit International Inc.
|
5,883 | 0.43000 | Active | Schottky | 60 V | 2A | 750 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 µA @ 60 V | 100pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 175°C | Details |
|
NRTS860PFST3G
DIODE SCHOTTKY 8A 60V TO277-3
onsemi
|
9,245 | 0.37870 | Active | Schottky | 60 V | 8A | 640 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 60 V | 870pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 175°C | Details |
|
SSB44HR5G
DIODE SCHOTTKY 40V 4A DO214AA
Taiwan Semiconductor Corporation
|
908 | 0.65000 | Discontinued at Digi-Key | Schottky | 40 V | 4A | 500 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 235pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
Vishay General Semiconductor - Diodes Division
|
6,849 | 0.15690 | Active | Standard | 400 V | 2A | 1.45 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 400 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C | Details |
|
NSVRB521S30T1G
DIODE SCHOTTKY 30V 200MA SOD523
onsemi
|
6,549 | 0.40000 | Active | Schottky | 30 V | 200mA (DC) | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 30 µA @ 10 V | - | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 125°C | Details |
|
SK1050D2
SCHOTTKY D2PAK 50V 10A
Diotec Semiconductor
|
5,000 | 0.56190 | Active | Schottky | 50 V | 10A | 700 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 50 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -50°C ~ 150°C | Details |
|
CDBA3200LR-HF
DIODE SCHOTTKY 200V 3A DO214AC
Comchip Technology
|
8,838 | 0.19720 | Active | Schottky | 200 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 200 V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 175°C | Details |
|
BAS516HE3-TP
150MW SWITCHING DIODES SOD-523
Micro Commercial Co
|
5,312 | 0.29000 | Active | Standard | 100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 1pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 150°C | Details |
|
VS-CPU6006L-N3
DIODE GEN PURP 600V 30A TO247AD
Vishay General Semiconductor - Diodes Division
|
4,233 | 2.92000 | Active | Standard | 600 V | 30A | 1.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 30 µA @ 600 V | - | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C | Details |
|
BAT54-HE3-18
DIODE SCHOTTKY 30V 200MA SOT23
Vishay General Semiconductor - Diodes Division
|
18,747 | 0.32000 | Active | Schottky | 30 V | 200mA (DC) | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C (Max) | Details |
|
UG4B-E3/54
DIODE GEN PURP 100V 4A DO201AD
Vishay General Semiconductor - Diodes Division
|
7,300 | 0.24450 | Active | Standard | 100 V | 4A | 950 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C | Details |
|
16FR100
16 AMP SILCON RECTIFIER DO4 AK
Solid State Inc.
|
8,050 | 1.66700 | Active | Standard | 1000 V | 16A | 1.2 V @ 16 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C | Details |
|
BAT54QB-QZ
BAT54QB-Q/SOT8015/DFN1110D-3
Nexperia USA Inc.
|
5,000 | 0.27000 | Active | Schottky | 30 V | 200mA (DC) | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 150°C | Details |
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