Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR140RL DIODE GEN PURP 400V 1A AXIAL onsemi	20,000	0.07000	Obsolete	Standard	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 400 V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C	Details
PX1500K-CT CUT-TAPE VERSION. STANDARD RECO Diotec Semiconductor	2,041	2.80200	Active	Standard	800 V	15A	1 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 800 V	-	Through Hole	P600, Axial	P600	-50°C ~ 175°C	Details
SS10P6HM3_A/I DIODE SCHOTTKY 60V 7A TO277A Vishay General Semiconductor - Diodes Division	7,175	0.40840	Active	Schottky	60 V	7A	670 mV @ 7 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 60 V	560pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C	Details
2A04G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	3,612	0.07600	Active	Standard	400 V	2A	1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C	Details
VS-SD823C25S20C DIODE GEN PURP 2.5KV 810A B-43 Vishay General Semiconductor - Diodes Division	8,210	156.92500	Active	Standard	2500 V	810A	2.2 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	50 mA @ 2500 V	-	Stud Mount	DO-200AA, A-PUK	B-43, Hockey PUK	-	Details
VS-6F10 DIODE GEN PURP 100V 6A DO203AA Vishay General Semiconductor - Diodes Division	3,720	5.44910	Active	Standard	100 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C	Details
SL13-E3/5AT DIODE SCHOTTKY 30V 1.5A DO214AC Vishay General Semiconductor - Diodes Division	6,377	0.53000	Active	Schottky	30 V	1.5A	445 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C	Details
BYG10J-AQ DIODE STD SMA 600V 1.5A Diotec Semiconductor	7,500	0.08670	Active	Avalanche	600 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	DO-214AC, SMA	-50°C ~ 150°C	Details
MURS230T3 DIODE ULTRA FAST 2A 300V SMB onsemi	38,920	0.10000	Obsolete	Standard	300 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	5 µA @ 300 V	-	Surface Mount	DO-214AA, SMB	SMB	-	Details
SB1H100-E3/73 DIODE SCHOTTKY 100V 1A DO204AL Vishay General Semiconductor - Diodes Division	80,793	0.52000	Active	Schottky	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 100 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	175°C (Max)	Details
SS2P6-M3/85A DIODE SCHOTTKY 60V 2A DO220AA Vishay General Semiconductor - Diodes Division	4,416	0.11300	Active	Schottky	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C	Details
D1800N43TVFXPSA1 DIODE GEN PURP 4.3KV 1800A Infineon Technologies	9,786	580.50000	Active	Standard	4300 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4300 V	-	Chassis Mount	DO-200AC, K-PUK	-	-40°C ~ 160°C	Details
SB80-05J RECTIFIER DIODE, SCHOTTKY onsemi	11,150	0.63000	Active	-	-	-	-	-	-	-	-	-	-	-	-	Details
CDBC540-HF DIODE SCHOTTKY 40V 5A DO214AB Comchip Technology	1,767	0.62000	Active	Schottky	40 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	380pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-50°C ~ 150°C	Details
1N4749AT9-E RECTIFIER DIODE Renesas Electronics America Inc	15,000	0.20000	Active	-	-	-	-	-	-	-	-	-	-	-	-	Details
STTH200F04TV1 DIODE MODULE 400V ISOTOP STMicroelectronics	3,859	33.94000	Active	Standard	400 V	100A	1.45 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	75 µA @ 400 V	-	Chassis Mount	ISOTOP	ISOTOP	-55°C ~ 150°C	Details
CDBDSC51200-G DIODE SIC 5A 1200V TO-252/DPAK Comchip Technology	475	6.87000	Active	Silicon Carbide Schottky	1200 V	18A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	475pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C	Details
UPS120E/TR7 DIODE SCHOTTKY 20V 1A POWERMITE Microchip Technology	7,412	0.54000	Active	Schottky	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 20 V	80pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C	Details
CD1408-FF1400 DIODE GEN PURP 400V 1A 1408 Bourns Inc.	1,106	0.10370	Active	Standard	400 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C	Details
JANTX1N6643US DIODE GEN PURP 125V 300MA D5D Microchip Technology	2,535	7.09500	Active	Standard	125 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	50 nA @ 20 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C	Details
S1M-M3/61T DIODE GPP 1A 1000V DO-214AC Vishay General Semiconductor - Diodes Division	1,625	0.05420	Active	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	5 µA @ 1000 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C	Details
HS1JFS 75NS, 1A, 600V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	7,000	0.11360	Active	Standard	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 600 V	13pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C	Details
RSFJL RUG DIODE GEN PURP 600V 500MA SUBSMA Taiwan Semiconductor Corporation	1,797	0.19350	Active	Standard	600 V	500mA	1.3 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C	Details
VS-SD603C04S10C DIODE GEN PURP 400V 600A B-43 Vishay General Semiconductor - Diodes Division	7,742	90.31420	Active	Standard	400 V	600A	2.97 V @ 1885 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	45 mA @ 400 V	-	Stud Mount	DO-200AA, A-PUK	B-43, Hockey PUK	-	Details

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