Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ACGRTS4007-HF DIODE GEN PURP 1000V 1A TS/SOD-1 Comchip Technology	32,104	0.39000	Active	Standard	1000 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	TS/SOD-123FL	-55°C ~ 150°C	Details
JANS1N5292-1/TR CURRENT REGULATOR Microchip Technology	3,853	96.18000	Active	-	-	-	-	-	-	-	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-	Details
BAS20,215 DIODE GEN PURP 150V 200MA SOT23 Nexperia USA Inc.	11,454	0.16000	Active	Standard	150 V	200mA (DC)	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 150 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	150°C (Max)	Details
SL310B 3A -100V - SMB (DO-214AA) - RECT SURGE	250	0.27000	Active	Schottky	100 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	220pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C	Details
P600K-E3/73 DIODE GEN PURP 800V 6A P600 Vishay General Semiconductor - Diodes Division	9,591	0.91000	Active	Standard	800 V	6A	900 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 800 V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C	Details
ZLLS400QTA DIODE SCHOTTKY 40V 520MA SOD323 Diodes Incorporated	3,102	0.48000	Active	Schottky	40 V	520mA (DC)	500 mV @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	10 µA @ 30 V	15pF @ 30V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)	Details
1N6079/TR RECTIFIER UFR,FRR Microchip Technology	3,296	33.31500	Active	Standard	50 V	2A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 50 V	-	Through Hole	A, Axial	-	-65°C ~ 155°C	Details
SBRT2M10LP-7 DIODE SBR 10V 2A 3DFN Diodes Incorporated	27	0.44000	Obsolete	Super Barrier	10 V	2A	400 mV @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	250 µA @ 10 V	-	Surface Mount	3-UDFN	X1-DFN1411-3	-55°C ~ 150°C	Details
12F160 12 AMP SILCON RECTIFIER DO4 KK Solid State Inc.	1,979	1.60000	Active	Standard	1600 V	12A	1.2 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C	Details
1N3595-1E3 DIODE ZENER 125 V DO-35 Microchip Technology	8,337	2.97000	Active	Standard	125 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 175°C	Details
TSP12U120S DIODE SCHOTTKY 120V 12A TO277A Taiwan Semiconductor Corporation	44,589	1.52000	Active	Schottky	120 V	12A	780 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 120 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C	Details
XBS104S14R-G DIODE SCHOTTKY 40V 1A SOD123A Torex Semiconductor Ltd	1,956	0.17050	Active	Schottky	40 V	1A	540 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	200 µA @ 40 V	35pF @ 10V, 1MHz	Surface Mount	SOD-123	SOD-123A	125°C (Max)	Details
UFS110JE3/TR13 DIODE GEN PURP 100V 1A DO214BA Microchip Technology	4,178	0.87000	Active	Standard	100 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	-	Surface Mount	DO-214BA	DO-214BA	-55°C ~ 175°C	Details
NTE5843 R-600PRV 3A ANODE CASE NTE Electronics, Inc	60	6.55000	Active	Standard	600 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C	Details
NTE6115 R-1200PRV 1200A NTE Electronics, Inc	2	210.21000	Active	Standard	1200 V	1625A	1.93 V @ 3770 A	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 1200 V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB	-30°C ~ 175°C	Details
PMEG100T20ELXDX SCHOTTKYS IN CFP PACKAGES PMEG10 Nexperia USA Inc.	4,480	0.45000	Active	Schottky	100 V	2A	880 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	600 nA @ 100 V	120pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD323HP	175°C	Details
P2500D DIODE STD D8X7.5 200V 25A Diotec Semiconductor	1,000	0.79710	Active	Standard	200 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 200 V	-	Through Hole	P600, Axial	P600	-50°C ~ 175°C	Details
MURS120 DIODE GEN PURP 200V 1A SMB SMC Diode Solutions	840	0.53000	Active	Standard	200 V	1A	900 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C	Details
PMEG4005CEJX DIODE SCHOTTKY 40V 500MA SC90 Nexperia USA Inc.	1,496	0.47000	Active	Schottky	40 V	500mA	640 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	1.8 ns	8 µA @ 40 V	24pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C (Max)	Details
NTE597 R-SI 200V 8AMP ULTRA-FAST NTE Electronics, Inc	2,375	2.09000	Active	Standard	200 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 µA @ 200 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C	Details
MUR420S DIODE GEN PURP 200V 4A DO214AB Taiwan Semiconductor Corporation	1,820	0.26570	Active	Standard	200 V	4A	-	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C	Details
BYP35K4 ST Rect, 400V, 35A Diotec Semiconductor	2,551	2.19070	Active	Standard	400 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	100 µA @ 400 V	-	Through Hole	DO-208AA	DO-208	-50°C ~ 200°C	Details
BAV19W-HE3-08 DIODE GEN PURP 100V 250MA SOD123 Vishay General Semiconductor - Diodes Division	2,593	0.04130	Active	Standard	100 V	250mA (DC)	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 100 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)	Details
RS1M-13-F DIODE GEN PURP 1KV 1A SMA Diodes Incorporated	6,899	0.51000	Active	Standard	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C	Details

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