| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMEG3050EP,115
DIODE SCHOTTKY 30V 5A SOD128
Nexperia USA Inc.
|
89,087 | 0.56000 | Active | Schottky | 30 V | 5A | 360 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8 mA @ 30 V | 800pF @ 1V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 150°C (Max) | Details |
|
SL42HE3_B/I
DIODE SCHOTTKY 20V 4A DO214AB
Vishay General Semiconductor - Diodes Division
|
6,275 | 0.41250 | Active | Schottky | 20 V | 8A | 470 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C | Details |
|
NTE6041
R-600 PRV 60A ANODE CASE
NTE Electronics, Inc
|
6 | 16.55000 | Active | Standard | 480 V | 60A | 1.4 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 480 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 175°C | Details |
|
JANTXV1N6628
DIODE GEN PURP 660V 1.75A AXIAL
Microchip Technology
|
4 | 18.69000 | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C | Details |
|
SK2040YD2R
SCHOTTKY D2PAK 40V 20A
Diotec Semiconductor
|
347,902 | 0.53690 | Active | Schottky | 40 V | 20A | 580 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -50°C ~ 150°C | Details |
|
MBR0580-TP
DIODE SCHOTTKY 80V 500MA SOD123
Micro Commercial Co
|
336,701 | 0.35000 | Active | Schottky | 80 V | 500mA | 800 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 80 V | 30pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C | Details |
|
STPSC6H12B-TR1
DIODE SCHOTTKY 1.2KV 6A DPAK
STMicroelectronics
|
9,380 | 3.77000 | Active | Silicon Carbide Schottky | 1200 V | 6A | 1.9 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 330pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C | Details |
|
ES1G-F1-0000HF
DIODE GEN PURP 400V 1A DO214AC
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
1,550 | 0.47000 | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
1N4148W_R1_00001
SOD-123, SWITCHING
Panjit International Inc.
|
148,546 | 0.14000 | Active | Standard | 75 V | 200mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 2.5 µA @ 75 V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C | Details |
|
VS-60EPS16-M3
DIODE GEN PURP 1.6KV 60A TO247AC
Vishay General Semiconductor - Diodes Division
|
5,801 | 7.25000 | Active | Standard | 1600 V | 60A | 1.15 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C | Details |
|
BAV102
DIODE GEN PURP 150V 200MA LL34
onsemi
|
987 | 0.40000 | Active | Standard | 150 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 150 V | 5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 200°C | Details |
|
SDT10A100P5-13
SCHOTTKY RECTIFIER PDI5 T&R 5K
Diodes Incorporated
|
5,210 | 0.26150 | Active | Schottky | 100 V | 10A | 680 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C | Details |
|
GL34D-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
4,860 | 0.18570 | Active | Standard | 200 V | 500mA | 1.2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C | Details |
|
BAS81-GS18
DIODE SCHOTTKY 40V 30MA SOD80
Vishay General Semiconductor - Diodes Division
|
1,966 | 0.38000 | Active | Schottky | 40 V | 30mA (DC) | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 40 V | 1.6pF @ 1V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) | Details |
|
SK310B-LTP
DIODE SCHOTTKY 100V 3A DO214AA
Micro Commercial Co
|
1,008 | 0.45000 | Active | Schottky | 100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
1N4148-P-TAP
DIODE GEN PURP 75V 2A DO35
Vishay General Semiconductor - Diodes Division
|
8,164 | 0.16000 | Obsolete | Standard | 75 V | 150mA | 1 V @ 10 mA | Fast Recovery =< 500ns, > 200mA (Io) | 8 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | 175°C (Max) | Details |
|
S3A-M3/57T
DIODE GPP 3A 50V DO-214AB
Vishay General Semiconductor - Diodes Division
|
9,493 | 0.15490 | Active | Standard | 50 V | 3A | 1.15 V @ 2.5 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 10 µA @ 50 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C | Details |
|
JANTX1N3613/TR
HIGH VOLTAGE RECTIFIER
Microchip Technology
|
1,631 | 5.35500 | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | - | Through Hole | A, Axial | - | -65°C ~ 175°C | Details |
|
BAS170WS-HE3-18
DIODE SCHOTTKY 70V 70MA SOD323
Vishay General Semiconductor - Diodes Division
|
1,305 | 0.45000 | Active | Schottky | 70 V | 70mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 70 V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C | Details |
|
RS1PJ-M3/85A
DIODE GEN PURP 600V 1A DO220AA
Vishay General Semiconductor - Diodes Division
|
2,784 | 0.08220 | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C | Details |
|
HER308G A0G
DIODE GEN PURP 1KV 3A DO201AD
Taiwan Semiconductor Corporation
|
1,886 | 1.27000 | Active | Standard | 1000 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 1000 V | 35pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C | Details |
|
ES1JLW
DIODE GEN PURP 600V 1A SOD123W
Taiwan Semiconductor Corporation
|
32,001 | 0.41000 | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 175°C | Details |
|
SE20PD-M3/84A
DIODE GEN PURP 200V 1.6A DO220AA
Vishay General Semiconductor - Diodes Division
|
3,642 | 0.09910 | Active | Standard | 200 V | 1.6A | 1.05 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 5 µA @ 200 V | 13pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C | Details |
|
SK310A-TP
DIODE SCHOTTKY 100V 3A DO214AC
Micro Commercial Co
|
118,533 | 0.52000 | Discontinued at Digi-Key | Schottky | 100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 125°C | Details |
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