| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SE12DGHM3/I
DIODE GEN PURP 400V 3.2A TO263AC
Vishay General Semiconductor - Diodes Division
|
2 | 1.74000 | Active | Standard | 400 V | 3.2A | 1.15 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 20 µA @ 400 V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C | Details |
|
GL1G-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
1,277 | 0.20200 | Active | Standard | 400 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 400 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C | Details |
|
SS2PH5HM3/85A
DIODE SCHOTTKY 50V 2A DO220AA
Vishay General Semiconductor - Diodes Division
|
8,739 | 0.09380 | Active | Schottky | 50 V | 2A | 800 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 µA @ 50 V | 93pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C | Details |
|
BYP60A05
ST Rect, 50V, 60A
Diotec Semiconductor
|
9,232 | 2.46930 | Active | Standard | 50 V | 60A | 1.1 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 100 µA @ 50 V | - | Through Hole | DO-208AA | DO-208 | -50°C ~ 200°C | Details |
|
1N4305
RECTIFIER DIODE
Fairchild Semiconductor
|
112,938 | 0.02000 | Obsolete | Standard | 75 V | 300mA | 850 mV @ 10 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | 175°C (Max) | Details |
|
LL4154-M-08
DIODE GEN PURP 35V 300MA SOD80
Vishay General Semiconductor - Diodes Division
|
4,556 | 0.03170 | Active | Standard | 35 V | 300mA | 1 V @ 30 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 25 V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) | Details |
|
ESJLW
DIODE, SUPER FAST
Taiwan Semiconductor Corporation
|
3,114 | 0.10130 | Active | Standard | 600 V | 800mA | 1.7 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 600 V | 19pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C | Details |
|
SS2H10-M3/52T
DIODE SCHOTTKY 2A 100V DO-214AA
Vishay General Semiconductor - Diodes Division
|
4,723 | 0.14980 | Active | Schottky | 100 V | 2A | 790 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C | Details |
|
B560C-13
DIODE SCHOTTKY 60V 5A SMC
Diodes Incorporated
|
8,437 | 1.55000 | Active | Schottky | 60 V | 5A | 700 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C | Details |
|
S1FLJ-GS08
DIODE GP 600V 700MA DO219AB
Vishay General Semiconductor - Diodes Division
|
1,514 | 0.37000 | Active | Standard | 600 V | 700mA | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 600 V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C | Details |
|
RM3A
RM3 SERIES, 2.5 A, CASE TYPE: DO
EIC SEMICONDUCTOR INC.
|
7,500 | 0.05170 | Active | Standard | 400 V | 2.5A | 950 mV @ 2.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C | Details |
|
VS-15AWL06FNTRR-M3
DIODE GEN PURP 600V 15A D-PAK
Vishay General Semiconductor - Diodes Division
|
5,830 | 0.61810 | Active | Standard | 600 V | 15A | 1.05 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 10 µA @ 600 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C | Details |
|
SR24_R1_00001
SMA, SKY
Panjit International Inc.
|
14,250 | 0.40000 | Active | Schottky | 40 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C | Details |
|
VS-E4TU2006FP-N3
DIODE GEN PURP 600V 20A TO220-2
Vishay General Semiconductor - Diodes Division
|
5,915 | 1.11000 | Active | Standard | 600 V | 20A | 1.63 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 61 ns | 15 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -55°C ~ 175°C | Details |
|
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
Diodes Incorporated
|
596,853 | 0.30000 | Active | Standard | 1000 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 1000 V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C | Details |
|
BYT53D-TAP
DIODE AVALANCHE 200V 1.9A SOD57
Vishay General Semiconductor - Diodes Division
|
8,255 | 0.29700 | Active | Avalanche | 200 V | 1.9A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C | Details |
|
BAR46FILM
DIODE SCHOTTKY 100V 150MA SOT23
STMicroelectronics
|
4 | 0.47000 | Active | Schottky | 100 V | 150mA (DC) | 1 V @ 250 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 75 V | 10pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 150°C (Max) | Details |
|
LS412060
DIODE GEN PURP 2KV 600A POWRBLOK
Powerex Inc.
|
8,200 | 164.32500 | Active | Standard | 2000 V | 600A | 1.19 V @ 1800 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2000 V | - | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module | - | Details |
|
ES2LGH
DIODE GEN PURP 400V 2A DO214AA
Taiwan Semiconductor Corporation
|
2,230 | 0.13980 | Active | Standard | 400 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
JANTX1N6640
DIODE GEN PURP 50V 300MA
MACOM Technology Solutions
|
137 | 11.55000 | Discontinued at Digi-Key | Standard | 50 V | 300mA (DC) | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 90 µA @ 50 V | - | Through Hole | D, Axial | - | -65°C ~ 175°C | Details |
|
FR205G
DIODE GPP 600V 2A DO15
SMC Diode Solutions
|
1,261 | 0.07410 | Active | Standard | 600 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 420 V | 40pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C | Details |
|
VS-10TQ045STRR-M3
DIODE SCHOTTKY 45V 10A D2PAK
Vishay General Semiconductor - Diodes Division
|
9,391 | 0.85920 | Active | Schottky | 45 V | 10A | 570 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 45 V | 900pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C | Details |
|
V2FM10-M3/I
2A,100V,SMF,TRENCH SKY RECT.
Vishay General Semiconductor - Diodes Division
|
5,521 | 0.07840 | Active | Schottky | 100 V | 2A | 830 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55 µA @ 100 V | 150pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C | Details |
|
CDBB160-G
DIODE SCHOTTKY 60V 1A DO214AA
Comchip Technology
|
4,394 | 0.35000 | Active | Schottky | 60 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 125°C (Max) | Details |
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