| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-40EPF06-M3
DIODE GEN PURP 600V 40A TO247AC
Vishay General Semiconductor - Diodes Division
|
1,249 | 7.27000 | Active | Standard | 600 V | 40A | 1.25 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 600 V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C | Details |
|
PMEG10010ELR-QX
SCHOTTKYS IN CFP PACKAGES
Nexperia USA Inc.
|
6,203 | 0.10990 | Active | Schottky | 100 V | 1A | 770 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 3.7 ns | 150 nA @ 100 V | 70pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 175°C | Details |
|
DSR6V600P5-13
DIODE GEN PURP 600V 6A POWERDI5
Diodes Incorporated
|
1,105 | 0.50000 | Obsolete | Standard | 600 V | 6A | 3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 30pF @ 4V, 1MHz | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 175°C | Details |
|
GI1-1600GP-E3/54
DIODE GEN PURP 1.6KV 1A DO204AC
Vishay General Semiconductor - Diodes Division
|
3,500 | 0.83000 | Active | Standard | 1600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1600 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C | Details |
|
STPS3L45AF
DIODE SCHOTTKY 45V 3A SMAFLAT
STMicroelectronics
|
38,361 | 0.56000 | Active | Schottky | 45 V | 3A | 570 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 45 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat | 150°C (Max) | Details |
|
VS-6EWL06FNTR-M3
DIODE GEN PURP 600V 6A DPAK
Vishay General Semiconductor - Diodes Division
|
7 | 0.95000 | Active | Standard | 600 V | 6A | 1.25 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 154 ns | 5 µA @ 600 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C | Details |
|
STPSC8H065DLF
SILICON CARBIDE DIODES
STMicroelectronics
|
28 | 4.03000 | Active | Silicon Carbide Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 460pF @ 0V, 1MHz | Surface Mount | 8-PowerVDFN | PowerFlat™ (8x8) HV | -40°C ~ 175°C | Details |
|
VSSAF3N50-M3/6A
DIODE SCHOTTKY 50V 2.7A DO221AC
Vishay General Semiconductor - Diodes Division
|
9,073 | 0.54000 | Active | Schottky | 50 V | 2.7A (DC) | 400 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 50 V | 570pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 150°C | Details |
|
VS-8ETU04-1HM3
DIODE GEN PURP 400V 8A TO262AA
Vishay General Semiconductor - Diodes Division
|
8,215 | 0.74250 | Active | Standard | 400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 43 ns | 10 µA @ 400 V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | -55°C ~ 175°C | Details |
|
SS22S-E3/61T
DIODE SCHOTTKY 20V 2A DO214AA
Vishay General Semiconductor - Diodes Division
|
1,612 | 0.10400 | Active | Schottky | 20 V | 2A | 550 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
SE10DG-M3/I
DIODE GEN PURP 400V 3A TO263AC
Vishay General Semiconductor - Diodes Division
|
50 | 0.89000 | Active | Standard | 400 V | 3A | 1.15 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 15 µA @ 400 V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C | Details |
|
DMA10P1600PZ-TUB
POWER DIODE DISCRETES-RECTIFIER
IXYS
|
1,120 | 2.73020 | Active | Standard | 1600 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C | Details |
|
25F100
25 AMP SILCON RECTIFIER DO4 KK
Solid State Inc.
|
2,846 | 2.00000 | Active | Standard | 1000 V | 25A | 1.2 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C | Details |
|
1N4607
DIODE GEN PURP 85V 200MA DO35
Microchip Technology
|
401 | 2.34000 | Active | Standard | 85 V | 200mA | 1.1 V @ 400 mA | Small Signal =< 200mA (Io), Any Speed | 10 ns | 100 µA @ 50 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C | Details |
|
SK215A
DIODE SCHOTTKY 150V 2A DO214AC
Taiwan Semiconductor Corporation
|
9,672 | 0.43000 | Active | Schottky | 150 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
S4PBHM3_A/H
DIODE GEN PURP 100V 4A TO277A
Vishay General Semiconductor - Diodes Division
|
9,220 | 0.20460 | Active | Standard | 100 V | 4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 10 µA @ 100 V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C | Details |
|
RS1GFS
DIODE, FAST, 1A, 400V
Taiwan Semiconductor Corporation
|
9,898 | 0.05640 | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C | Details |
|
RGP10KE-E3/54
DIODE GEN PURP 800V 1A DO204AL
Vishay General Semiconductor - Diodes Division
|
5,592 | 0.17540 | Active | Standard | 800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C | Details |
|
BD860YS_S2_00001
SURFACE MOUNT SCHOTTKY BARRIER R
Panjit International Inc.
|
8,806 | 0.95000 | Active | Schottky | 60 V | 8A | 750 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C | Details |
|
FS1JE-TP
DIODE GEN PURP 600V 1A SMAE
Micro Commercial Co
|
41,498 | 0.45000 | Discontinued at Digi-Key | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMAE | -50°C ~ 150°C | Details |
|
FESB16GTHE3_A/I
DIODE GEN PURP 400V 16A TO263AB
Vishay General Semiconductor - Diodes Division
|
5,163 | 1.13850 | Active | Standard | 400 V | 16A | 1.3 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 175pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C | Details |
|
PMEG4002ESFC315
RECTIFIER DIODE, SCHOTTKY
NXP USA Inc.
|
135,000 | 0.04000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
VS-16FR100
DIODE GEN PURP 1KV 16A DO203AA
Vishay General Semiconductor - Diodes Division
|
6,519 | 8.52000 | Active | Standard, Reverse Polarity | 1000 V | 16A | 1.23 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 1000 V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C | Details |
|
LL4448 L0G
DIODE GP 75V 150MA MINIMELF
Taiwan Semiconductor Corporation
|
4,046 | 0.02200 | Active | Standard | 75 V | 150mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | Mini MELF | -65°C ~ 175°C | Details |
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