| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP250NPBF
MOSFET N-CH 200V 30A TO247AC
Infineon Technologies
|
12,143 | 2.88000 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Tc) | 10V | 75mOhm @ 18A, 10V | 4V @ 250µA | 123 nC @ 10 V | ±20V | 2159 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
SI7137DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
|
5,616 | 2.41000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 2.5V, 10V | 1.95mOhm @ 25A, 10V | 1.4V @ 250µA | 585 nC @ 10 V | ±12V | 20000 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
IXFK102N30P
MOSFET N-CH 300V 102A TO264AA
IXYS
|
39 | 16.10000 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 102A (Tc) | 10V | 33mOhm @ 500mA, 10V | 5V @ 4mA | 224 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA | Details |
|
SI7884BDP-T1-E3
MOSFET N-CH 40V 58A PPAK SO-8
Vishay Siliconix
|
4,711 | 3.06000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | 4.5V, 10V | 7.5mOhm @ 16A, 10V | 3V @ 250µA | 77 nC @ 10 V | ±20V | 3540 pF @ 20 V | - | 4.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
BUK9M6R6-30EX
MOSFET N-CH 30V 70A LFPAK33
Nexperia USA Inc.
|
4,265 | 0.97000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 5V | 5.3mOhm @ 20A, 10V | 2.1V @ 1mA | 18 nC @ 5 V | ±10V | 2001 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) | Details |
|
IRLHM620TRPBF
MOSFET N-CH 20V 26A/40A PQFN
Infineon Technologies
|
12,000 | 1.20000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78 nC @ 4.5 V | ±12V | 3620 pF @ 10 V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN | Details |
|
PSMN027-100XS,127
MOSFET N-CH 100V 23.4A TO220F
NXP USA Inc.
|
7,194 | 0.51000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 23.4A (Tc) | 10V | 26.8mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1624 pF @ 50 V | - | 41.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab | Details |
|
SIB457EDK-T1-GE3
MOSFET P-CH 20V 9A PPAK SC75-6
Vishay Siliconix
|
8,200 | 0.58000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 4.5V | 35mOhm @ 4.8A, 4.5V | 1V @ 250µA | 44 nC @ 8 V | ±8V | - | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 | Details |
|
SIR626ADP-T1-RE3
MOSFET N-CH 60V 40.4A/165A PPAK
Vishay Siliconix
|
1,518 | 2.16000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40.4A (Ta), 165A (Tc) | 6V, 10V | 1.75mOhm @ 20A, 10V | 3.5V @ 250µA | 83 nC @ 10 V | ±20V | 3770 pF @ 30 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
AO3402
MOSFET N-CH 30V 4A SOT23-3L
Alpha & Omega Semiconductor Inc.
|
4,983 | 0.48000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 2.5V, 10V | 55mOhm @ 4A, 10V | 1.4V @ 250µA | 4.34 nC @ 4.5 V | ±12V | 390 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant | Details |
|
IPD65R400CEAUMA1
MOSFET N-CH 650V 15.1A TO252-3
Infineon Technologies
|
3,307 | 1.45000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15.1A (Tc) | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | Super Junction | 118W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMN10H170SVTQ-7
MOSFET N-CH 100V 2.6A TSOT26
Diodes Incorporated
|
3,705 | 0.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.6A (Ta) | 4.5V, 10V | 160mOhm @ 5A, 10V | 3V @ 250µA | 9.7 nC @ 10 V | ±20V | 1167 pF @ 25 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 | Details |
|
TN2540N8-G
MOSFET N-CH 400V 260MA TO243AA
Microchip Technology
|
7,039 | 1.74000 | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA | Details |
|
STP12NM50FP
MOSFET N-CH 500V 12A TO220FP
STMicroelectronics
|
3,686 | 4.81000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 350mOhm @ 6A, 10V | 5V @ 50µA | 39 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 35W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
APT1201R2BLLG
MOSFET N-CH 1200V 12A TO247
Microchip Technology
|
30 | 27.92000 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.2Ohm @ 6A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
AO7401
MOSFET P-CH 30V 1.4A SC70-3
Alpha & Omega Semiconductor Inc.
|
3,951 | 0.43000 | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 2.5V, 10V | 150mOhm @ 1.2A, 10V | 1.4V @ 250µA | 5.06 nC @ 4.5 V | ±12V | 409 pF @ 15 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 | Details |
|
TPH1500CNH,L1Q
MOSFET N-CH 150V 38A 8SOP
Toshiba Semiconductor and Storage
|
3,105 | 1.88000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 1.6W (Ta), 78W (Tc) | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN | Details |
|
DMN4040SK3-13
MOSFET N-CH 40V 6A TO252-3
Diodes Incorporated
|
6,443 | 0.19160 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 6A (Ta) | 4.5V, 10V | 30mOhm @ 12A, 10V | 3V @ 250µA | 18.6 nC @ 10 V | ±20V | 945 pF @ 20 V | - | 1.71W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IXTP1N80P
MOSFET N-CH 800V 1A TO220AB
IXYS
|
6,453 | 2.14300 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 14Ohm @ 500mA, 10V | 4V @ 50µA | 9 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
FDS6679AZ
MOSFET P-CH 30V 13A 8SOIC
onsemi
|
7,214 | 0.93000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 9.3mOhm @ 13A, 10V | 3V @ 250µA | 96 nC @ 10 V | ±25V | 3845 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
BUK654R0-75C,127
MOSFET N-CH 75V 120A TO220AB
NXP USA Inc.
|
3,883 | 1.33000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 2.8V @ 1mA | 234 nC @ 10 V | ±16V | 15450 pF @ 25 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
SI8499DB-T2-E1
MOSFET P-CH 20V 16A 6MICRO FOOT
Vishay Siliconix
|
6,000 | 0.72000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Tc) | 1.8V, 4.5V | 32mOhm @ 1.5A, 4.5V | 1.3V @ 250µA | 30 nC @ 5 V | ±12V | 1300 pF @ 10 V | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot™ (1.5x1) | 6-UFBGA | Details |
|
SIHP22N60E-GE3
MOSFET N-CH 600V 21A TO220AB
Vishay Siliconix
|
9,548 | 4.23000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 | Details |
|
FQU2N100TU
MOSFET N-CH 1000V 1.6A IPAK
onsemi
|
4,269 | 1.50000 | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.6A (Tc) | 10V | 9Ohm @ 800mA, 10V | 5V @ 250µA | 15.5 nC @ 10 V | ±30V | 520 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
Submit your RFQ and our team will source it for you.