| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AON6290
MOSFET N CH 100V 28A DFN5X6
Alpha & Omega Semiconductor Inc.
|
9,525 | 3.02000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Ta), 85A (Tc) | 6V, 10V | 4.6mOhm @ 20A, 10V | 3.4V @ 250µA | 90 nC @ 10 V | ±20V | 4600 pF @ 50 V | - | 7.3W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads | Details |
|
AOB288L
MOSFET N-CH 80V 10.5A/46A TO263
Alpha & Omega Semiconductor Inc.
|
4,695 | 1.11270 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10.5A (Ta), 46A (Tc) | 6V, 10V | 8.9mOhm @ 20A, 10V | 3.4V @ 250µA | 38 nC @ 10 V | ±20V | 1871 pF @ 40 V | - | 2.1W (Ta), 93.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SIS434DN-T1-GE3
MOSFET N-CH 40V 35A PPAK 1212-8
Vishay Siliconix
|
8,241 | 1.02000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 7.6mOhm @ 16.2A, 10V | 2.2V @ 250µA | 40 nC @ 10 V | ±20V | 1530 pF @ 20 V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | Details |
|
AOD380A60
MOSFET N-CH 600V 11A TO252
Alpha & Omega Semiconductor Inc.
|
7,290 | 1.56600 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 3.8V @ 250µA | 20 nC @ 10 V | ±20V | 955 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IPD050N03LGATMA1
MOSFET N-CH 30V 50A TO252-3
Infineon Technologies
|
27 | 1.36000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
C2M0045170D
SICFET N-CH 1700V 72A TO247-3
Wolfspeed, Inc.
|
4,630 | 101.37000 | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
STL120N4F6AG
MOSFET N-CH 40V 55A POWERFLAT
STMicroelectronics
|
7,768 | 2.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 55A (Tc) | 10V | 3.6mOhm @ 13A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 96W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN | Details |
|
SUD50P06-15L-E3
MOSFET P-CH 60V 50A TO252
Vishay Siliconix
|
9,841 | 2.79000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165 nC @ 10 V | ±20V | 4950 pF @ 25 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
NXV100XPR
NXV100XP/SOT23/TO-236AB
Nexperia USA Inc.
|
292 | 0.46000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 1.8V, 4.5V | 140mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 6.4 nC @ 4.5 V | ±12V | 354 pF @ 15 V | - | 340mW (Ta), 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 | Details |
|
IRFP2907PBF
MOSFET N-CH 75V 209A TO247AC
Infineon Technologies
|
9,958 | 6.79000 | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 209A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
FDS7088N7
MOSFET N-CH 30V 23A 8SO
Fairchild Semiconductor
|
1,599 | 1.87000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 3mOhm @ 23A, 10V | 3V @ 250µA | 48 nC @ 5 V | ±20V | 3845 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) | Details |
|
BSZ100N03MSGATMA1
MOSFET N-CH 30V 10A/40A 8TSDSON
Infineon Technologies
|
1,254 | 0.97000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 40A (Tc) | 4.5V, 10V | 9.1mOhm @ 20A, 10V | 2V @ 250µA | 23 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN | Details |
|
NVMYS2D1N04CLTWG
MOSFET N-CH 40V 29A/132A LFPAK4
onsemi
|
5,880 | 1.20700 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Ta), 132A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2V @ 90µA | 50 nC @ 10 V | ±20V | 3100 pF @ 25 V | - | 3.9W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK | Details |
|
AO3421
MOSFET P-CH 30V 2.6A SOT23-3L
Alpha & Omega Semiconductor Inc.
|
3,771 | 0.12280 | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.6A (Ta) | 4.5V, 10V | 110mOhm @ 2.6A, 10V | 2.4V @ 250µA | 5.2 nC @ 10 V | ±20V | 240 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant | Details |
|
NTLJS5D0N03CTAG
MOSFET N-CH 30V 11.2A 6PQFN
onsemi
|
8,869 | 1.62000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.2A (Ta) | 4.5V, 10V | 4.38mOhm @ 10A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | ±20V | 1255 pF @ 15 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerWDFN | Details |
|
FCH150N65F-F155
MOSFET N-CH 650V 24A TO247
onsemi
|
4,271 | 4.84000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 94 nC @ 10 V | ±20V | 3737 pF @ 100 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
DMTH3004LK3-13
MOSFET N-CH 30V 21A/75A TO252
Diodes Incorporated
|
2,481 | 0.49730 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 75A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 44 nC @ 10 V | +20V, -16V | 2370 pF @ 15 V | - | 1.9W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
MCB85N06Y-TP
MOSFET N-CH 60V 85A D2PAK
Micro Commercial Co
|
30,414 | 1.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 85A (Tc) | 10V | 13mOhm @ 30A, 10V | 2.4V @ 250µA | 36 nC @ 10 V | ±20V | 2498 pF @ 25 V | - | 85W | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IXFA230N075T2-7
MOSFET N-CH 75V 230A TO263-7
IXYS
|
7,830 | 6.85000 | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 1mA | 178 nC @ 10 V | - | 10500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
YJG50N03A-F1-0100HF
N-CH MOSFET 30V 50A PDFN5060-8L-
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
9,605 | 0.67000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 4.7mOhm @ 15A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 2504 pF @ 15 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerLDFN | Details |
|
SSM3K56FS,LF
MOSFET N-CH 20V 800MA SSM
Toshiba Semiconductor and Storage
|
50,530 | 0.39000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 | Details |
|
AUIRLU3114Z-701TRL
AUIRLU3114Z - 20V-40V N-CHANNEL
Infineon Technologies
|
39,000 | 1.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
NTPF082N65S3F
MOSFET N-CH 650V 40A TO220F
onsemi
|
3,047 | 3.84110 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±30V | 3240 pF @ 400 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack | Details |
|
STB57N65M5
MOSFET N-CH 650V 42A D2PAK
STMicroelectronics
|
2,908 | 15.40000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
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