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SIB457EDK-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIB457EDK-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC75-6

SIB457EDK-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 9A PPAK SC75-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-75-6.

In Stock: 8,200

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6
Package / CasePowerPAK® SC-75-6

Frequently Asked Questions

SIB457EDK-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 9A PPAK SC75-6

The mounting type of SIB457EDK-T1-GE3 is Surface Mount.

The operating temperature range of SIB457EDK-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIB457EDK-T1-GE3 is PowerPAK® SC-75-6.

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