| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTD23N03R-001
MOSFET N-CH 25V 3.8A/17.1A IPAK
onsemi
|
3,372 | 0.10000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 3.8A (Ta), 17.1A (Tc) | 4V, 5V | 45mOhm @ 6A, 10V | 2V @ 250µA | 3.76 nC @ 4.5 V | ±20V | 225 pF @ 20 V | - | 1.14W (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
RM50N60IP
MOSFET N-CHANNEL 60V 50A TO251
Rectron USA
|
6,057 | 0.22000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | 900 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak | Details |
|
NTD5N50-001-MO
NFET DPAK 500V 1.8R
Motorola
|
7,279 | 0.67000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
BUK9Y40-55B,115
MOSFET N-CH 55V 26A LFPAK56
Nexperia USA Inc.
|
6,774 | 0.85000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 26A (Tc) | 5V | 36mOhm @ 15A, 10V | 2V @ 1mA | 11 nC @ 5 V | ±15V | 1020 pF @ 25 V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
IPL60R075CFD7AUMA1
MOSFET N-CH 650V 33A 4VSON
Infineon Technologies
|
28 | 7.71000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 75mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 189W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN | Details |
|
BSZ0506NSATMA1
MOSFET N-CH 30V 15A/40A TSDSON
Infineon Technologies
|
70 | 1.22000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2V @ 250µA | 15 nC @ 10 V | ±20V | 950 pF @ 15 V | - | 2.1W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN | Details |
|
2SK4210
MOSFET N-CH 900V 10A TO3PB
onsemi
|
2,500 | 4.56000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 10A (Ta) | 10V | 1.3Ohm @ 5A, 10V | - | 75 nC @ 10 V | ±30V | 1500 pF @ 30 V | - | 2.5W (Ta), 190W (Tc) | 150°C (TJ) | Through Hole | TO-3PB | TO-3P-3, SC-65-3 | Details |
|
SIHG33N65EF-GE3
MOSFET N-CH 650V 31.6A TO247AC
Vishay Siliconix
|
7,025 | 7.28000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.6A (Tc) | 10V | 109mOhm @ 16.5A, 10V | 4V @ 250µA | 171 nC @ 10 V | ±30V | 4026 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
SQP25N15-52_GE3
MOSFET N-CH 150V 25A TO220AB
Vishay Siliconix
|
8,727 | 1.53730 | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 10V | 52mOhm @ 15A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 2360 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
NDD60N900U1T4G
MOSFET N-CH 600V 5.7A DPAK
onsemi
|
1,922 | 0.59000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±25V | 360 pF @ 50 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
MTP1N60E
N-CHANNEL POWER MOSFET
onsemi
|
23,123 | 0.31000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IXFH20N100P
MOSFET N-CH 1000V 20A TO247AD
IXYS
|
3,736 | 13.02000 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 126 nC @ 10 V | ±30V | 7300 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 | Details |
|
BUK7M9R9-60EX
MOSFET N-CH 60V 60A LFPAK33
Nexperia USA Inc.
|
3,950 | 1.06000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 9.9mOhm @ 15A, 10V | 4V @ 1mA | 30.1 nC @ 10 V | ±20V | 2007 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) | Details |
|
DMN3018SSS-13
MOSFET N CH 30V 7.3A 8-SO
Diodes Incorporated
|
9,335 | 0.44000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.3A (Ta) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2.1V @ 250µA | 13.2 nC @ 10 V | ±25V | 697 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) | Details |
|
IXTA86N20T-TRL
MOSFET N-CH 200V 86A TO263
IXYS
|
4,785 | 3.96370 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 86A (Tc) | 10V | 33mOhm @ 43A, 10V | 5V @ 1mA | 90 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
EPC2022
GANFET N-CH 100V 90A DIE
EPC
|
9,381 | 8.46000 | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 12mA | - | +6V, -4V | 1500 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
STFI26N60M2
MOSFET N-CH 600V 20A I2PAKFP
STMicroelectronics
|
1,494 | 3.18000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | - | ±25V | - | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak | Details |
|
IRF9Z24PBF-BE3
MOSFET P-CH 60V 11A TO220AB
Vishay Siliconix
|
953 | 2.03000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | - | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
SIB456DK-T1-GE3
MOSFET N-CH 100V 6.3A PPAK SC75
Vishay Siliconix
|
6,680 | 0.53000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.3A (Tc) | 4.5V, 10V | 185mOhm @ 1.9A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 130 pF @ 50 V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 | Details |
|
FCH043N60
MOSFET N-CH 600V 75A TO247-3
onsemi
|
275 | 17.15000 | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
FDMC2610
MOSFET N-CH 200V 2.2A/9.5A 8MLP
onsemi
|
1,589 | 2.58000 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.2A (Ta), 9.5A (Tc) | 6V, 10V | 200mOhm @ 2.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 960 pF @ 100 V | - | 2.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN | Details |
|
IPB011N04LGATMA1
MOSFET N-CH 40V 180A TO263-7
Infineon Technologies
|
337 | 6.25000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 1.1mOhm @ 100A, 10V | 2V @ 200µA | 346 nC @ 10 V | ±20V | 29000 pF @ 20 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) | Details |
|
SI2308BDS-T1-GE3
MOSFET N-CH 60V 2.3A SOT23-3
Vishay Siliconix
|
1,257 | 0.58000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.3A (Tc) | 4.5V, 10V | 156mOhm @ 1.9A, 10V | 3V @ 250µA | 6.8 nC @ 10 V | ±20V | 190 pF @ 30 V | - | 1.09W (Ta), 1.66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
FCP360N65S3R0
MOSFET N-CH 650V 10A TO220-3
onsemi
|
6,752 | 0.86530 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 1mA | 18 nC @ 10 V | ±30V | 730 pF @ 400 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
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