| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB80N06S2L09ATMA2
MOSFET N-CH 55V 80A TO263-3
Infineon Technologies
|
5,856 | 1.83400 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 52A, 10V | 2V @ 125µA | 105 nC @ 10 V | ±20V | 2620 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
RF1S50N06SM9A
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
9,898 | 0.87000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250µA | 150 nC @ 20 V | ±20V | 2020 pF @ 25 V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SQJ168ELP-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
Vishay Siliconix
|
3,316 | 0.92000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V, 10V | 36mOhm @ 15A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 987 pF @ 25 V | - | 29.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
NTMFS5C612NT1G-TE
MOSFET N-CH 60V 35A/230A 5DFN
onsemi
|
5,983 | 5.55000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Ta), 230A (Tc) | - | 1.6mOhm @ 50A, 10V | 4V @ 250µA | 60.2 nC @ 10 V | ±20V | 4830 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
SSM6J207FE,LF
MOSFET P-CH 30V 1.4A ES6
Toshiba Semiconductor and Storage
|
4,737 | 0.13250 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 | Details |
|
FQP16N25
MOSFET N-CH 250V 16A TO220-3
onsemi
|
875 | 1.77000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 16A (Tc) | 10V | 230mOhm @ 8A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
APT8020LFLLG
MOSFET N-CH 800V 38A TO264
Microchip Technology
|
7,293 | 44.42900 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | 10V | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA | Details |
|
DMP2035UVTQ-13
MOSFET P-CH 20V 7.2A TSOT26
Diodes Incorporated
|
9,036 | 0.13620 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.2A (Ta) | 1.8V, 4.5V | 35mOhm @ 4A, 4.5V | 1.5V @ 250µA | 23.1 nC @ 4.5 V | ±12V | 2400 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | Details |
|
PJD60R540E_L2_00001
600V N-CHANNEL SUPER JUNCTION MO
Panjit International Inc.
|
4,658 | 1.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.3A (Ta), 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 250µA | 23.7 nC @ 10 V | ±20V | 531 pF @ 25 V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMG1013UW-7
MOSFET P-CH 20V 820MA SOT323
Diodes Incorporated
|
2,399 | 0.38000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 820mA (Ta) | 1.8V, 4.5V | 750mOhm @ 430mA, 4.5V | 1V @ 250µA | 0.622 nC @ 4.5 V | ±6V | 59.76 pF @ 16 V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 | Details |
|
IRFP460BPBF
MOSFET N-CH 500V 20A TO247AC
Vishay Siliconix
|
3,353 | 3.53000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 3094 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
DMP3097L-13
MOSFET BVDSS: 25V~30V SOT23 T&R
Diodes Incorporated
|
6,579 | 0.08680 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.9A (Ta) | 4.5V, 10V | 65mOhm @ 3.8A, 10V | 2.1V @ 250µA | 13.4 nC @ 10 V | ±20V | 563 pF @ 25 V | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
FDP18N20F
MOSFET N-CH 200V 18A TO220-3
onsemi
|
250 | 1.50000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 145mOhm @ 9A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
BUK6Y61-60PX
MOSFET P-CH 60V 25A LFPAK56
Nexperia USA Inc.
|
3,094 | 0.98000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Ta) | 4.5V, 10V | 61mOhm @ 4.7A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 1060 pF @ 30 V | - | 66W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
SI2323DDS-T1-GE3
MOSFET P-CH 20V 5.3A SOT-23
Vishay Siliconix
|
4,016 | 0.61000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Tc) | 1.8V, 4.5V | 39mOhm @ 4.1A, 4.5V | 1V @ 250µA | 36 nC @ 8 V | ±8V | 1160 pF @ 10 V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
PJQ4402P-AU_R2_000A1
30V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
5,000 | 0.72000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 3.8mOhm @ 10A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | ±20V | 2436 pF @ 25 V | - | 2W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN | Details |
|
IPP111N15N3GXKSA1
MOSFET N-CH 150V 83A TO220-3
Infineon Technologies
|
1,676 | 6.25000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 8V, 10V | 11.1mOhm @ 83A, 10V | 4V @ 160µA | 55 nC @ 10 V | ±20V | 3230 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 | Details |
|
IXFN64N50P
MOSFET N-CH 500V 61A SOT227B
IXYS
|
8,117 | 28.81000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 61A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8700 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
BSP318SH6327XTSA1
MOSFET N-CH 60V 2.6A SOT223-4
Infineon Technologies
|
7,755 | 1.01000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.6A (Tj) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | ±20V | 380 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA | Details |
|
SPS03N60C3AKMA1
MOSFET N-CH 650V 3.2A TO251-3-11
Infineon Technologies
|
3,000 | 0.42000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-11 | TO-251-3 Stub Leads, IPak | Details |
|
IXTA34N65X2
MOSFET N-CH 650V 34A TO263AA
IXYS
|
2,498 | 5.96200 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
NTTFS4C13NTAG
MOSFET N-CH 30V 7.2A 8WDFN
onsemi
|
5,994 | 1.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 9.4mOhm @ 30A, 10V | 2.1V @ 250µA | 7.8 nC @ 4.5 V | ±20V | 770 pF @ 15 V | - | 780mW (Ta), 21.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
STP10NM60ND
MOSFET N-CH 600V 8A TO220
STMicroelectronics
|
631 | 1.75000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±25V | 577 pF @ 50 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
IXFP12N65X2
MOSFET N-CH 650V 12A TO220AB
IXYS
|
3,365 | 4.06000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5 nC @ 10 V | ±30V | 1134 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
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