| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT9F100B
MOSFET N-CH 1000V 9A TO247
Microchip Technology
|
4,976 | 5.20500 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2606 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | Details |
|
SPD08P06PGBTMA1
MOSFET P-CH 60V 8.83A TO252-3
Infineon Technologies
|
100 | 1.06000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.83A (Ta) | 6.2V | 300mOhm @ 10A, 6.2V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
FQB7N65CTM
MOSFET N-CH 650V 7A D2PAK
Fairchild Semiconductor
|
7,686 | 1.44000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 173W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
BSC042N03MSGATMA1
MOSFET N-CH 30V 17A/93A TDSON
Infineon Technologies
|
1,088 | 1.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 93A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN | Details |
|
IXFK26N120P
MOSFET N-CH 1200V 26A TO264AA
IXYS
|
257 | 38.99000 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 460mOhm @ 13A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 16000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA | Details |
|
SIHG35N60E-GE3
MOSFET N-CH 600V 32A TO247AC
Vishay Siliconix
|
1,512 | 6.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
NVMFS5C466NLT1G
MOSFET N-CH 40V 16A/52A 5DFN
onsemi
|
6,206 | 1.52000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16A (Ta), 52A (Tc) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 2.2V @ 30µA | 16 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
RJK60S7DPP-E0#T2
MOSFET N-CH 600V 30A TO220FP
Renesas Electronics America Inc
|
27 | 7.34000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 15A, 10V | - | 39 nC @ 10 V | +30V, -20V | 2300 pF @ 25 V | Super Junction | 34.7W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
AOB2606L
MOSFET N-CH 60V 13A/72A TO263
Alpha & Omega Semiconductor Inc.
|
1,263 | 0.97020 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 72A (Tc) | 10V | 6.2mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 4050 pF @ 30 V | - | 2.1W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IXFN400N15X3
MOSFET N-CH 150V 400A SOT227B
IXYS
|
6,181 | 47.21000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
TN0110N3-G-P002
MOSFET N-CH 100V 350MA TO92-3
Microchip Technology
|
5,523 | 1.42000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | Details |
|
SI1469DH-T1-E3
MOSFET P-CH 20V 2.7A SC70-6
Vishay Siliconix
|
6,936 | 0.66000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.7A (Tc) | 2.5V, 10V | 80mOhm @ 2A, 10V | 1.5V @ 250µA | 8.5 nC @ 4.5 V | ±12V | 470 pF @ 10 V | - | 1.5W (Ta), 2.78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 | Details |
|
IXFN100N65X2
MOSFET N-CH 650V 78A SOT227B
IXYS
|
2 | 34.39000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 78A (Tc) | 10V | 30mOhm @ 50A, 10V | 5V @ 4mA | 183 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
NTTFS4941NTWG
MOSFET N-CH 30V 8.3A/46A 8WDFN
onsemi
|
5,000 | 0.72000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta), 46A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.2V @ 250µA | 22.8 nC @ 10 V | ±20V | 1619 pF @ 15 V | - | 840mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
STFU16N65M2
MOSFET N-CH 650V 11A TO220FP
STMicroelectronics
|
8,194 | 3.20000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 718 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
AOT66920L
MOSFET N-CH 100V 22.5A/80A TO220
Alpha & Omega Semiconductor Inc.
|
2,953 | 2.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 8.3W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
IRFS4321TRRPBF
MOSFET N-CH 150V 85A D2PAK
Infineon Technologies
|
2,493 | 2.76680 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 4460 pF @ 25 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
DMPH2040UVTQ-13
MOSFET P-CH 20V 5.6/11.7A TSOT26
Diodes Incorporated
|
6,288 | 0.19110 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.6A (Ta), 11.7A (Tc) | 2.5V, 4.5V | 38mOhm @ 8.9A, 4.5V | 1.5V @ 250µA | 19 nC @ 8 V | ±12V | 834 pF @ 10 V | - | 1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 | Details |
|
NP83P04PDG-E1-AY
MOSFET P-CH 40V 83A TO-263
Renesas Electronics America Inc
|
7,710 | 2.86000 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 83A (Tc) | - | 5.3mOhm @ 41.5A, 10V | 2.5V @ 1mA | 200 nC @ 10 V | - | 9820 pF @ 10 V | - | - | - | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
STL10N65M2
MOSFET N-CH 650V 4.5A POWERFLAT
STMicroelectronics
|
9,484 | 0.96990 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 4V @ 250µA | 10.3 nC @ 10 V | ±25V | 315 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN | Details |
|
DMN65D8LQ-13
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
|
6,130 | 0.03050 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Ta) | 5V, 10V | 3Ohm @ 115mA, 10V | 2V @ 250µA | 0.87 nC @ 10 V | ±20V | 22 pF @ 25 V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
DMN3404LQ-7
MOSFET BVDSS: 25V~30V SOT23 T&R
Diodes Incorporated
|
3,209 | 0.11420 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 3V, 10V | 28mOhm @ 5.8A, 10V | 2V @ 250µA | 16 nC @ 10 V | ±20V | 498 pF @ 15 V | - | 720mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
STL31N65M5
MOSFET N-CH 650V 15A PWRFLAT88
STMicroelectronics
|
1,983 | 2.89470 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Ta), 15A (Tc) | 10V | 162mOhm @ 11A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±25V | 1865 pF @ 100 V | - | 2.8W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN | Details |
|
DMTH8028LPSWQ-13
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
|
6,493 | 0.26970 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 41.7A (Tc) | 4.5V, 10V | 25mOhm @ 5A, 10V | 2.5V @ 250µA | 10.4 nC @ 10 V | ±20V | 641 pF @ 25 V | - | 3.9W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN | Details |
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